Ordering number : EN9050A BXL4004 N-Channel Power MOSFET http://onsemi.com 40V, 100A, 3.9mΩ, TO-220-3L Features • • ON-resistance RDS(on)1=3mΩ (typ.) 4.5V drive • Input capacitance Ciss=8200pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Unit 40 PW≤10μs, duty cycle≤1% V ±20 V 100 A 400 A 1.75 W Allowable Power Dissipation PD 75 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 420 mJ 60 A Avalanche Current *2 Tc=25°C Note : *1 VDD=24V, L=100μH, IAV=60A (Fig.1) *2 L≤100μH, Single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7536-001 • Package : TO-220-3L • JEITA, JEDEC : SC-46, TO-220AB • Minimum Packing Quantity : 50 pcs./magazine BXL4004-1E 4.5 3.6 2.8 (1.7) 1.3 10.0 Marking Electrical Connection 1.3 2 9.2 8.9 MAX 13.3 15.7 (0.6) XL4004 LOT No. 1 1.27 0.8 13.08 3.0 1.52 3 0.5 2.4 1 2 3 2.54 1 : Gate 2 : Drain 3 : Source 2.54 TO-220-3L Semiconductor Components Industries, LLC, 2013 July, 2013 82912 TKIM TC-00002738/41112QA TKIM TC-00002736 No.9050-1/7 BXL4004 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ max 40 V Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±16V, VDS=0V VDS=10V, ID=1mA Forward Transfer Admittance | yfs | VDS=10V, ID=50A RDS(on)1 ID=50A, VGS=10V 3 3.9 mΩ RDS(on)2 ID=50A, VGS=4.5V 4.7 6.6 mΩ Static Drain-to-Source On-State Resistance Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance ID=1mA, VGS=0V VDS=40V, VGS=0V Unit 1.2 10 μA ±10 μA 2.6 120 V S 8200 pF 940 pF Crss 700 pF Turn-ON Delay Time td(on) 65 ns Rise Time tr 390 ns Turn-OFF Delay Time td(off) 510 ns Fall Time tf 360 ns Total Gate Charge Qg 140 nC Gate-to-Source Charge Qgs 43 nC Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD IS=100A, VGS=0V 1.0 Reverse Recovery Time trr Qrr See Fig.3 90 ns 230 nC Reverse Recovery Charge VDS=20V, f=1MHz See Fig.2 VDS=24V, VGS=10V, ID=100A 25 IS=100A, VGS=0V, di/dt=100A/μs Fig.1 Unclamped Inductive Switching Test Circuit 10V 0V VDD=24V VIN ≥50Ω ID=50A RL=0.48Ω VIN BXL4004 VDD 50Ω V Fig.2 Switching Time Test Circuit 10V 0V L nC 1.2 D PW=10μs D.C.≤1% VOUT G BXL4004 P.G 50Ω S Fig.3 Reverse Recovery Time Test Circuit BXL4004 D L G S VDD Driver MOSFET Ordering Information Device BXL4004-1E Package Shipping memo TO-220-3L 50pcs./magazine Pb Free and Halogen Free No.9050-2/7 BXL4004 ID -- VDS 120 100 80 60 VGS=3.5V 40 Tc= --2 5°C 75°C 25°C 60 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ID=50A Single pulse 7 6 5 Tc=75°C 4 25°C 3 --25°C 2 1 0 0 1 2 3 5 4 6 7 8 9 Gate-to-Source Voltage, VGS -- V 5°C --2 = Tc °C 75 3 2 10 7 5 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A Ciss, Coss, Crss -- pF tr td(on) 5 3 VDD=24V VGS=10V 2 3 3 2 1 --25 0 25 50 75 100 125 150 IT16820 IS -- VSD VGS=0V Single pulse 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 IT16822 Ciss, Coss, Crss -- VDS f=1MHz Ciss 3 2 Coss 1000 7 5 Crss 3 2 2 10 0.1 4 10000 7 5 2 7 5 3 2 tf 100 A =50 V, I D 5 . 4 = VGS A =50 , ID V 0 =1 VGS 6 Diode Forward Voltage, VSD -- V 5 3 7 100000 7 5 td (off) 7 7 IT16818 Single pulse 1000 7 5 3 2 5 7 100 IT16821 SW Time -- ID 1000 6 Case Temperature, Tc -- °C 3 2 1.0 0.1 5 8 0 --50 Source Current, IS -- A 100 7 5 4 RDS(on) -- Tc 9 10 °C 25 3 Gate-to-Source Voltage, VGS -- V VDS=10V 3 2 2 1 IT16819 | yfs | -- ID 1000 7 5 0 IT16817 RDS(on) -- VGS 8 0 2.0 5°C 25°C --25° C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 80 Tc= 7 0.2 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0 9 Forward Transfer Admittance, | yfs | -- S 100 20 Drain-to-Source Voltage, VDS -- V Switching Time, SW Time -- ns 120 40 20 0 140 --25 °C 140 VDS=10V Tc=7 5°C 8V 160 Drain Current, ID -- A Drain Current, ID -- A 160 180 25° C 180 ID -- VGS 200 4.5V 10V Tc=25°C 6V 200 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 7 100 IT16823 100 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT16824 No.9050-3/7 BXL4004 VGS -- Qg 10 VDS=24V ID=100A 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 7 6 5 4 3 1 0 20 40 60 80 100 Total Gate Charge, Qg -- nC PD -- Ta s 10 10 ms 0m s DC op era tio n Operation in this area is limited by RDS(on). ID=100A 10 7 5 3 2 140 1.75 1.5 1.0 0.5 0 20 40 60 80 100 120 EAS -- Ta 120 140 160 IT16828 0μ s 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V IT16825 2.0 10μ 10 s Tc=25°C PD -- Tc 80 Ambient Temperature, Ta -- °C Avalanche Energy derating factor -- % 120 1m 0.1 Single pulse 2 3 5 7 1.0 0.1 Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 2.5 0 100 7 5 3 2 ASO IDP=400A(PW≤10μs) 1.0 7 5 3 2 2 0 1000 7 5 3 2 5 7 100 IT16826 75 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT16827 100 80 60 40 20 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT16829 No.9050-4/7 BXL4004 Magazine Specification BXL4004-1E No.9050-5/7 BXL4004 Outline Drawing BXL4004-1E Mass (g) Unit 2.0 mm * For reference No.9050-6/7 BXL4004 Note on usage : Since the BXL4004 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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