BXL4004 Ordering number : EN9050A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET BXL4004 General-Purpose Switching Device Applications Features • • ON-resistance RDS(on)1=3mΩ (typ.) 4.5V drive • Input capacitance Ciss=8200pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Unit 40 PW≤10μs, duty cycle≤1% V ±20 V 100 A 400 A 1.75 W Allowable Power Dissipation PD 75 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 420 mJ 60 A Avalanche Current *2 Tc=25°C Note : *1 VDD=24V, L=100μH, IAV=60A (Fig.1) *2 L≤100μH, Single pulse Package Dimensions Product & Package Information unit : mm (typ) 7536-001 • Package : TO-220-3L • JEITA, JEDEC : SC-46, TO-220AB • Minimum Packing Quantity : 50 pcs./magazine BXL4004-1E 4.5 3.6 2.8 (1.7) 1.3 10.0 Marking Electrical Connection 1.3 2 9.2 8.9 MAX 13.3 15.7 (0.6) XL4004 LOT No. 1 1.27 0.8 13.08 3.0 1.52 3 0.5 2.4 1 2 3 2.54 1 : Gate 2 : Drain 3 : Source 2.54 SANYO : TO-220-3L http://www.sanyosemi.com/en/network/ 82912 TKIM TC-00002738/41112QA TKIM TC-00002736 No.9050-1/7 BXL4004 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ max 40 V Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±16V, VDS=0V VDS=10V, ID=1mA Forward Transfer Admittance | yfs | VDS=10V, ID=50A RDS(on)1 ID=50A, VGS=10V 3 3.9 mΩ RDS(on)2 ID=50A, VGS=4.5V 4.7 6.6 mΩ Static Drain-to-Source On-State Resistance Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance ID=1mA, VGS=0V VDS=40V, VGS=0V Unit 1.2 10 μA ±10 μA 2.6 120 V S 8200 pF 940 pF Crss 700 pF Turn-ON Delay Time td(on) 65 ns Rise Time tr 390 ns Turn-OFF Delay Time td(off) 510 ns Fall Time tf 360 ns Total Gate Charge Qg 140 nC Gate-to-Source Charge Qgs 43 nC Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD IS=100A, VGS=0V 1.0 Reverse Recovery Time trr Qrr See Fig.3 90 ns 230 nC Reverse Recovery Charge VDS=20V, f=1MHz See Fig.2 VDS=24V, VGS=10V, ID=100A 25 IS=100A, VGS=0V, di/dt=100A/μs Fig.1 Unclamped Inductive Switching Test Circuit 10V 0V VDD=24V VIN ≥50Ω ID=50A RL=0.48Ω VIN BXL4004 VDD 50Ω V Fig.2 Switching Time Test Circuit 10V 0V L nC 1.2 D PW=10μs D.C.≤1% VOUT G BXL4004 P.G 50Ω S Fig.3 Reverse Recovery Time Test Circuit BXL4004 D L G S VDD Driver MOSFET Ordering Information Device BXL4004-1E Package Shipping memo TO-220-3L 50pcs./magazine Pb Free and Halogen Free No.9050-2/7 BXL4004 ID -- VDS 100 80 60 VGS=3.5V 40 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ID=50A Single pulse 7 6 5 Tc=75°C 4 25°C 3 --25°C 2 1 0 0 1 2 3 5 4 6 7 8 9 Gate-to-Source Voltage, VGS -- V 5°C --2 = Tc °C 75 3 2 10 7 5 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A Ciss, Coss, Crss -- pF tr td(on) 5 3 VDD=24V VGS=10V 2 3 Tc= --2 5°C 75°C 25°C 3 2 1 --25 0 25 50 75 100 125 150 IT16820 IS -- VSD VGS=0V Single pulse 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 IT16822 Ciss, Coss, Crss -- VDS f=1MHz Ciss 3 2 Coss 1000 7 5 Crss 3 2 2 10 0.1 4 10000 7 5 2 7 5 3 2 tf 100 50A I D= , V 5 =4. VGS A =50 V, I D 0 1 = VGS 6 Diode Forward Voltage, VSD -- V 5 3 7 100000 7 5 td (off) 7 7 IT16818 Single pulse 1000 7 5 3 2 5 7 100 IT16821 SW Time -- ID 1000 6 Case Temperature, Tc -- °C 3 2 1.0 0.1 5 8 0 --50 Source Current, IS -- A 100 7 5 4 RDS(on) -- Tc 9 10 °C 25 3 Gate-to-Source Voltage, VGS -- V VDS=10V 3 2 2 1 IT16819 | yfs | -- ID 1000 7 5 0 IT16817 RDS(on) -- VGS 8 0 2.0 5°C 25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 60 Tc= 7 0.2 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0 9 Forward Transfer Admittance, | yfs | -- S 80 20 Drain-to-Source Voltage, VDS -- V Switching Time, SW Time -- ns 100 40 20 0 120 --25° C 120 140 --25 °C 140 VDS=10V Tc=7 5°C 8V 160 Drain Current, ID -- A Drain Current, ID -- A 160 180 25° C 180 ID -- VGS 200 4.5V 10V Tc=25°C 6V 200 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 7 100 IT16823 100 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT16824 No.9050-3/7 BXL4004 VGS -- Qg 10 VDS=24V ID=100A 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 7 6 5 4 3 1 0 20 40 60 80 100 Total Gate Charge, Qg -- nC PD -- Ta s 10 10 ms 0m s DC op era tio n Operation in this area is limited by RDS(on). ID=100A 10 7 5 3 2 140 1.75 1.5 1.0 0.5 0 20 40 60 80 100 120 EAS -- Ta 120 140 160 IT16828 0μ s 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V IT16825 2.0 10μ 10 s Tc=25°C PD -- Tc 80 Ambient Temperature, Ta -- °C Avalanche Energy derating factor -- % 120 1m 0.1 Single pulse 2 3 5 7 1.0 0.1 Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 2.5 0 100 7 5 3 2 ASO IDP=400A(PW≤10μs) 1.0 7 5 3 2 2 0 1000 7 5 3 2 5 7 100 IT16826 75 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT16827 100 80 60 40 20 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT16829 No.9050-4/7 BXL4004 Magazine Specification BXL4004-1E No.9050-5/7 BXL4004 Outline Drawing BXL4004-1E Mass (g) Unit 2.0 mm * For reference No.9050-6/7 BXL4004 Note on usage : Since the BXL4004 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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