Ordering number : ENA1648B CPH3448 Power MOSFET http://onsemi.com 30V, 50mΩ, 4A, Single N-Channel Features • 1.8V drive • Halogen free compliance • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 Gate-to-Source Voltage VGSS ±12 V V Drain Current (DC) ID 4 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 16 A Allowable Power Dissipation PD When mounted on ceramic substrate (900mm2×0.8mm) 1.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Package Dimensions Product & Package Information unit : mm (typ) 7015A-004 • Package : CPH3 • JEITA, JEDEC : SC-59, TO-236, SOT-23 • Minimum Packing Quantity : 3,000 pcs./reel 0.6 2.9 CPH3448-TL-H CPH3448-TL-W 0.15 Packing Type: TL Marking LOT No. 0.05 1.6 2.8 0.2 LE 3 0.9 0.2 0.6 TL 1 2 0.95 0.4 1 : Gate 2 : Source 3 : Drain Electrical Connection 3 CPH3 1 2 ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2014 July, 2014 71514HK TC-00003139/61312TKIM/90110TKIM PE No. A1648-1/5 CPH3448 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ Unit max Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V Zero-Gate Voltage Drain Current IDSS VDS=30V, VGS=0V 30 V Gate-to-Source Leakage Current IGSS VGS=±8V, VDS=0V Cutoff Voltage VGS(off) VDS=10V, ID=1mA Forward Transfer Admittance | yfs | VDS=10V, ID=2A 3.4 RDS(on)1 RDS(on)2 ID=2A, VGS=4.5V ID=1A, VGS=2.5V 38 50 mW Static Drain-to-Source On-State Resistance 51 72 mW 80 130 mW 0.4 1 mA ±10 mA 1.3 V S RDS(on)3 ID=0.5A, VGS=1.8V Input Capacitance Ciss VDS=10V, f=1MHz 430 pF Output Capacitance Coss VDS=10V, f=1MHz 59 pF Reverse Transfer Capacitance Crss pF td(on) tr VDS=10V, f=1MHz See specified Test Circuit. 38 Turn-ON Delay Time 10 ns See specified Test Circuit. 41 ns See specified Test Circuit. 36 ns Fall Time td(off) tf See specified Test Circuit. 37 ns Total Gate Charge Qg VDS=15V, VGS=4.5V, ID=4A 4.7 nC 0.8 nC 1.1 nC Rise Time Turn-OFF Delay Time Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=15V, VGS=4.5V, ID=4A VDS=15V, VGS=4.5V, ID=4A Diode Forward Voltage VSD IS=4A, VGS=0V 0.82 1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Switching Time Test Circuit VDD=15V 4.5V 0V VIN ID=2A RL=7.5Ω PW=10ms D.C.≤1% VIN VOUT D G P.G 50Ω S CPH3448 Ordering Information Device CPH3448-TL-H CPH3448-TL-W Package Shipping memo CPH3 3,000pcs./reel Pb-Free and Halogen Free No. A1648-2/5 CPH3448 ID -- VDS VDS=10V 4.5 4.0 2.0 1.5 1.5V 1.0 3.5 3.0 2.5 2.0 1.5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 60 40 20 1 2 3 4 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V 1.0 1.2 1.4 1.6 1.8 2.0 IT14345 A =0.5 V, I D 8 . 1 = VGS A =1.0 V, I D 5 . 2 = 2.0A VGS , I D= 4.5V = VGS 100 80 60 40 20 --40 --20 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT14347 IS -- VSD 7 5 VGS=0V 3 2 2 °C 25 -- = Ta 1.0 7 25 5 °C 75 °C 3 1.0 7 5 5°C 25°C --25 °C 3 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 0.8 120 0 --60 10 VDS=10V 5 0.6 RDS(on) -- Ta IT14346 | yfs | -- ID 7 0.4 3 2 Ta= 7 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 80 0 0.2 140 ID=1A 2A 0.5A 100 0 Gate-to-Source Voltage, VGS -- V Ta=25°C 120 0 0 1.0 IT14344 RDS(on) -- VGS 140 0.1 7 5 3 2 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 Drain Current, ID -- A 3 0.01 5 3 td(off) 3 tf 2 td(on) 10 tr 7 5 0.6 0.8 1.0 1.2 IT14349 f=1MHz 7 5 Ciss, Coss, Crss -- pF 100 0.4 Ciss, Coss, Crss -- VDS 1000 2 5 0.2 Diode Forward Voltage, VSD -- V VDD=15V VGS=4.5V 7 0 IT14348 SW Time -- ID 5 Switching Time, SW Time -- ns 0.5 VGS=1.2V 0 25°C 1.0 0.5 --25°C 2.5 Ta=7 5°C Drain Current, ID -- A 3.0 ID -- VGS 5.0 1.8V 7.0V 4.5V 3.5 Drain Current, ID -- A 3.5V 2.5V 4.0 Ciss 3 2 100 7 Coss 5 Crss 3 2 3 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Drain Current, ID -- A 2 3 5 7 10 IT14350 10 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT14351 No. A1648-3/5 CPH3448 VGS -- Qg 4.0 10 7 5 3.5 3.0 2.5 2.0 1.5 1.0 7 5 3 2 0.1 7 5 0.5 3 2 0 1 2 3 4 5 Total Gate Charge, Qg -- nC PD -- Ta 1.2 6 IT14352 SOA IDP=16A (PW≤10ms) 100 1m ID=4A 3 2 1.0 0 Allowable Power Dissipation, PD -- W 3 2 VDS=15V ID=4A Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 4.5 DC 10 op Operation in this area is limited by RDS(on). ms 10 era ms s 0m tio n( Ta = s 25 °C ) Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Drain-to-Source Voltage, VDS -- V 3 5 HD15325 When mounted on ceramic substrate (900mm2×0.8mm) 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT15326 No. A1648-4/5 CPH3448 Outline Drawing CPH3448-TL-H, CPH3448-TL-W Land Pattern Example Mass (g) Unit 0.013 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 Note on usage :Since the CPH3448 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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