CPH5871 Ordering number : ENA1401 SANYO Semiconductors DATA SHEET CPH5871 Features • • • • MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting. [MOSFET] • Ultrahigh-speed switching • 1.8V drive [SBD] • Short reverse recovery time. • Low forward voltage. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation VDSS VGSS ID IDP Channel Temperature PD Tch Storage Temperature Tstg 30 V ±12 V 3.5 A PW≤10μs, duty cycle≤1% 14 A When mounted on ceramic substrate (600mm2×0.8mm) 1unit 0.9 W Marking : YZ 150 °C --55 to +125 °C Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 12809PE MS IM TC-00001794 No. A1401-1/5 CPH5871 Continued from preceding page. Parameter Symbol Conditions Ratings Unit [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current VRRM VRSM IO Junction Temperature IFSM Tj Storage Temperature Tstg 30 50Hz sine wave, 1 cycle V 35 V 1 A 10 A --55 to +125 °C --55 to +125 °C Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max [MOSFET] Drain-to-Source Breakdown Voltage V(BR)DSS IDSS IGSS VDS=30V, VGS=0V VGS=±8V, VDS=0V Forward Transfer Admittance VGS(off) | yfs | VDS=10V, ID=1mA VDS=10V, ID=2A Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 RDS(on)3 ID=2A, VGS=4.5V ID=1A, VGS=2.5V ID=0.5A, VGS=1.8V Input Capacitance Ciss VDS=10V, f=1MHz 430 pF Output Capacitance Coss VDS=10V, f=1MHz 59 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 38 pF Turn-ON Delay Time td(on) tr See specified Test Circuit. 10 ns See specified Test Circuit. 41 ns See specified Test Circuit. 36 ns Fall Time td(off) tf See specified Test Circuit. 37 ns Total Gate Charge Qg VDS=15V, VGS=4.5V, ID=3.5A 4.7 nC Gate-to-Source Charge Qgs nC Qgd VDS=15V, VGS=4.5V, ID=3.5A VDS=15V, VGS=4.5V, ID=3.5A 0.8 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=3.5A, VGS=0V 0.8 1.2 V VR VF1 IR=0.5mA IF=0.7A 0.45 0.5 V VF2 IR IF=1A 0.48 0.53 Interterminal Capacitance C Reverse Recovery Time trr VR=10V, f=1MHz, 1 cycle IF=IR=100mA, See specified Test Circuit. Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Rise Time Turn-OFF Delay Time ID=1mA, VGS=0V 30 V 0.4 2.0 1 μA ±10 μA 1.3 3.4 V S 40 52 mΩ 53 74 mΩ 82 132 mΩ 1.1 nC [SBD] Reverse Voltage Forward Voltage Reverse Current 15 5 4 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode 0.9 1.6 0.2 0.6 2.8 0.2 3 1 2 0.95 0.4 ns 3 0.05 1 pF 10 0.15 2.9 4 27 V μA Electrical Connection unit : mm (typ) 7017A-005 5 V VR=16V Package Dimensions 0.6 30 2 Top view 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode SANYO : CPH5 No. A1401-2/5 CPH5871 Switching Time Test Circuit (MOSFET) VDD=15V D 50Ω 100Ω 10Ω 10mA ID=2A RL=7.5Ω VOUT VIN PW=10μs D.C.≤1% Duty≤10% 100mA VIN 100mA 4.5V 0V trr Test Circuit (SBD) 10μs --5V G trr 50Ω S ID -- VDS 3.0 [MOSFET] 1.8V 3.5 3.5V 2.5V 7.0V 4.5V 4.0 Drain Current, ID -- A CPH5871 2.5 2.0 1.5 1.5V 1.0 0.5 VGS=1.2V 0 0.1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 120 0.5A , I D= 1.8V 100 = VGS 80 A =1.0 V, I D 5 . 2 = A VGS =2.0 V, I D 5 . 4 = VGS 60 40 20 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT14373 [MOSFET] Ta=25°C 120 ID=1A 2A 0.5A 100 80 60 40 20 0 1.0 Drain-to-Source Voltage, VDS -- V IT14371 RDS(on) -- Ta [MOSFET] 140 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0.2 0 1 2 3 4 5 6 7 8 Gate-to-Source Voltage, VGS -- V | yfs | -- ID 7 Forward Transfer Admittance, | yfs | -- S 0 RDS(on) -- VGS 140 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ P.G 9 10 IT14372 [MOSFET] VDS=10V 5 3 2 C 5° -2 =Ta 1.0 7 °C 75 °C 25 5 3 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Drain Current, ID -- A 2 3 5 IT14348 No. A1401-3/5 CPH5871 IS -- VSD 7 5 [MOSFET] 3 2 0.1 7 5 2 Switching Time, SW Time -- ns Ta= 75°C 25°C --25 °C Source Current, IS -- A 1.0 7 5 3 100 7 0 0.2 0.4 0.6 0.8 1.0 tr 2 0.01 Ciss 3 2 100 7 Coss 5 Crss 3 0 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 10 15 20 25 PW≤10μs 100 1m μs s ID=3.5A 10 DC Operation in this area is limited by RDS(on). 10 op ms 0m era s tio n(T a= 25 °C ) Ta=25°C Single pulse When mounted on ceramic substrate (600mm2×0.8mm)1unit 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Drain-to-Source Voltage, VDS -- V 2 5 3 2 0.1 7 Ta= 125 °C 100 °C 75°C 50°C 25°C 0°C --25°C 5 3 2 0 0.1 0.2 0.3 0.4 2 3 5 7 10 IT14350 [MOSFET] 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 1 2 3 4 5 PD -- Ta 1.0 6 IT14374 [MOSFET] When mounted on ceramic substrate (600mm2×0.8mm) 1unit 0.9 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT14376 IR -- VR 10000 5 Reverse Current, IR -- μA 7 5 7 1.0 VDS=15V ID=3.5A [SBD] Ta=125°C 100°C 1000 5 1.0 3 Total Gate Charge, Qg -- nC 5 [SBD] 2 VGS -- Qg IT14375 IF -- VF 3 3 5 7 0.1 4.0 0 30 IT14351 Drain-to-Source Voltage, VDS -- V ASO [MOSFET] IDP=14A 3 4.5 Allowable Power Dissipation, PD -- W 3 2 5 2 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V Ciss, Coss, Crss -- pF td(on) 5 1.2 2 Drain Current, ID -- A tf 7 f=1MHz 5 Forward Current, IF -- A 3 10 Diode Forward Voltage, VSD -- V IT14349 Ciss, Coss, Crss -- VDS [MOSFET] 7 0.01 td(off) 3 1000 10 5 2 2 0.01 [MOSFET] VDD=15V VGS=4.5V 3 3 2 SW Time -- ID 5 VGS=0V 75°C 100 5 50°C 10 5 25°C 1.0 5 0°C 0.1 5 0.01 5 --25°C 0.001 5 0.5 Forward Voltage, VF -- V 0.6 0.7 IT09553 0.0001 0 5 10 15 20 25 Reverse Voltage, VR -- V 30 35 IT09554 No. A1401-4/5 PF(AV) -- IO 0.8 [SBD] Rectangular wave 0.7 (1) θ 0.6 (2) (4)(3) 360° 0.5 Sine wave 0.4 180° 360° 0.3 0.2 (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 0.1 0 0 0.2 0.4 0.6 0.8 IFSM -- t Surge Forward Current, IFSM(Peak) -- A 14 [SBD] 2 100 7 5 3 2 10 1.0 Average Output Current, IO -- A C -- VR 3 Interterminal Capacitance, C -- pF Average Forward Power Dissipation, PF(AV) -- W CPH5871 1.2 IT09555 [SBD] 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Reverse Voltage, VR -- V 3 5 IT09556 Current waveform 50Hz sine wave 12 IS 20ms t 10 8 6 4 2 0 7 0.01 2 3 5 7 0.1 2 Time, t -- s 3 5 7 1.0 2 3 ID00435 Note on usage : Since the CPH5871 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of January, 2009. Specifications and information herein are subject to change without notice. PS No. A1401-5/5