CPH3457 Ordering number : ENA1804A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET CPH3457 General-Purpose Switching Device Applications Features • • • • ON-resistance RDS(on)1=73mΩ(typ.) 1.8V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Channel Temperature PD Tch Storage Temperature Tstg Unit 30 V 3 A PW≤10μs, duty cycle≤1% 12 A When mounted on ceramic substrate (900mm2×0.8mm) 1.0 W 150 °C --55 to +150 °C Package Dimensions Product & Package Information unit : mm (typ) 7015A-004 • Package : CPH3 • JEITA, JEDEC : SC-59, TO-236, SOT-23 • Minimum Packing Quantity : 3,000 pcs./reel CPH3457-TL-H 0.6 2.9 0.15 Packing Type: TL Marking 0.05 LOT No. 0.2 LP 3 1.6 2.8 V ±12 0.9 0.2 0.6 TL 1 2 0.95 0.4 1 : Gate 2 : Source 3 : Drain Electrical Connection 3 SANYO : CPH3 1 2 http://semicon.sanyo.com/en/network 61312 TKIM/90110PE TKIM TC-00002460 No. A1804-1/7 CPH3457 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Conditions Ratings min typ Unit max V(BR)DSS IDSS ID=1mA, VGS=0V VDS=30V, VGS=0V IGSS VGS(off) | yfs | VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1.5A 2.7 RDS(on)1 ID=1.5A, VGS=4.5V 73 95 mΩ RDS(on)2 ID=0.75A, VGS=2.5V 95 133 mΩ RDS(on)2 ID=0.3A, VGS=1.8V 135 203 mΩ Input Capacitance Ciss 265 pF Output Capacitance Coss VDS=10V, f=1MHz VDS=10V, f=1MHz 35 pF Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Reverse Transfer Capacitance Crss Turn-ON Delay Time Rise Time td(on) tr Turn-OFF Delay Time 30 V 0.4 1 μA ±10 μA 1.3 V S VDS=10V, f=1MHz See specified Test Circuit. 28 pF 5.1 ns See specified Test Circuit. 10 ns td(off) See specified Test Circuit. 137 ns Fall Time tf See specified Test Circuit. 36 ns Total Gate Charge Qg VDS=15V, VGS=4.5V, ID=3A 3.5 nC Gate-to-Source Charge Qgs 0.57 nC Gate-to-Drain “Miller” Charge Qgd VDS=15V, VGS=4.5V, ID=3A VDS=15V, VGS=4.5V, ID=3A Diode Forward Voltage VSD IS=3A, VGS=0V 0.87 0.93 nC 1.2 V Switching Time Test Circuit VDD=15V 4.5V 0V VIN PW=10μs D.C.≤1% ID=1.5A RL=10Ω VIN VOUT D G P.G 50Ω S CPH3457 Ordering Information Device CPH3457-TL-H Package Shipping memo CPH3 3,000pcs./reel Pb Free and Halogen Free No. A1804-2/7 CPH3457 ID -- VDS 1. 8V 1.6 2 1.5V 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 1.0 ID=0.3A 250 0.75A 1.5A 150 100 50 0 2 4 6 8 Gate-to-Source Voltage, VGS -- V | yfs | -- ID 7 7 25 °C 3 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Drain Current, ID -- A 2 25 50 --20 0 20 40 Ciss, Coss, Crss -- pF 2 tr 7 td(on) 5 80 100 120 140 160 IT15791 0.1 7 5 3 2 0.01 7 5 3 2 0 0.2 0.4 0.6 0.8 1.0 Ciss, Coss, Crss -- VDS 1.2 IT15273 f=1MHz 5 tf 10 60 VGS=0V 7 7 1.6 IT15269 IS -- VSD Ciss 3 3 1.4 Diode Forward Voltage, VSD -- V 100 5 1.2 1.0 7 5 3 2 0.001 3 VDD=15V VGS=4.5V td(off) 100 IT15272 SW Time -- ID 3 2 1.0 Ambient Temperature, Ta -- °C Source Current, IS -- A C 5° --2 °C = 75 Ta 0.8 A =0.3 V, I D 8 . 1 = VGS A 0.75 I D= , V 5 =2. VGS 1.5A , I D= 4.5V = VGS 150 7 5 3 2 2 5 0.6 200 IT15790 3 1.0 0.4 RDS(on) -- Ta 0 --60 --40 10 VDS=10V 5 0.2 250 Ta=25°C 200 0 Gate-to-Source Voltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0.9 0.2 IT15268 RDS(on) -- VGS 300 Forward Transfer Admittance, | yfs | -- S 0.6 Ta= 75° C 25° C --25 °C 0 Drain-to-Source Voltage, VDS -- V Switching Time, SW Time -- ns 0.8 °C VGS=1.2V 0 1.0 0.4 1 0 1.2 --25° C 3 1.4 Ta= 75° C Drain Current, ID -- A 4 VDS=10V 1.8 4.5 V 8.0V Drain Current, ID -- A 5 ID -- VGS 2.0 Ta=25°C 2.5 V 6.0V 6 2 100 7 5 Coss 3 Crss 2 3 2 0.1 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 7 IT15274 10 1 2 3 4 5 6 7 8 Drain-to-Source Voltage, VDS -- V 9 10 IT15275 No. A1804-3/7 CPH3457 VGS -- Qg 3 2 VDS=15V ID=3A 4.0 10 7 5 3.5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 4.5 3.0 2.5 2.0 1.5 1.0 0 0.5 1.0 1.5 2.0 2.5 Total Gate Charge, Qg -- nC PD -- Ta Allowable Power Dissipation, PD -- W 1.2 3.0 3.5 IT15276 IDP=12A (PW≤10μs) ID=3A 1.0 7 5 3 2 0.1 7 5 3 2 0.5 0 3 2 ASO 10 0 1m μs 10 s m DC s 10 0m op er s ati on (T a= Operation in this area 25 °C is limited by RDS(on). ) 10 μs Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT15792 When mounted on ceramic substrate (900mm2×0.8mm) 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT15789 No. A1804-4/7 CPH3457 Embossed Taping Specification CPH3457-TL-H No. A1804-5/7 CPH3457 Outline Drawing CPH3457-TL-H Land Pattern Example Mass (g) Unit 0.013 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 No. A1804-6/7 CPH3457 Note on usage : Since the CPH3457 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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