CPH3448 Ordering number : ENA1648A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET CPH3448 General-Purpose Switching Device Applications Features • • • 1.8V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Channel Temperature PD Tch Storage Temperature Tstg Unit 30 V ±12 V 4 A PW≤10μs, duty cycle≤1% 16 A When mounted on ceramic substrate (900mm2×0.8mm) 1.0 W 150 °C --55 to +150 °C Package Dimensions Product & Package Information unit : mm (typ) 7015A-004 • Package : CPH3 • JEITA, JEDEC : SC-59, TO-236, SOT-23 • Minimum Packing Quantity : 3,000 pcs./reel CPH3448-TL-H 0.6 2.9 Packing Type: TL 0.15 LOT No. LE 0.2 0.05 1.6 2.8 Marking 3 0.9 0.2 0.6 TL 1 2 0.95 0.4 1 : Gate 2 : Source 3 : Drain Electrical Connection 3 SANYO : CPH3 1 2 http://semicon.sanyo.com/en/network 61312 TKIM/90110PE TKIM TC-00002462 No. A1648-1/7 CPH3448 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Conditions Ratings min typ Unit max V(BR)DSS IDSS ID=1mA, VGS=0V VDS=30V, VGS=0V IGSS VGS(off) | yfs | VGS=±8V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=2A 3.4 RDS(on)1 ID=2A, VGS=4.5V 38 50 mΩ RDS(on)2 ID=1A, VGS=2.5V 51 72 mΩ RDS(on)3 ID=0.5A, VGS=1.8V 80 130 mΩ Input Capacitance Ciss Output Capacitance Coss VDS=10V, f=1MHz VDS=10V, f=1MHz Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance 30 V 0.4 1 μA ±10 μA 1.3 V S 430 pF 59 pF VDS=10V, f=1MHz See specified Test Circuit. 38 pF 10 ns See specified Test Circuit. 41 ns Reverse Transfer Capacitance Crss Turn-ON Delay Time Rise Time td(on) tr Turn-OFF Delay Time td(off) See specified Test Circuit. 36 ns Fall Time tf See specified Test Circuit. 37 ns Total Gate Charge Qg VDS=15V, VGS=4.5V, ID=4A 4.7 nC Gate-to-Source Charge Qgs 0.8 nC Gate-to-Drain “Miller” Charge Qgd VDS=15V, VGS=4.5V, ID=4A VDS=15V, VGS=4.5V, ID=4A Diode Forward Voltage VSD IS=4A, VGS=0V 1.1 0.82 nC 1.2 V Switching Time Test Circuit VDD=15V 4.5V 0V VIN PW=10μs D.C.≤1% ID=2A RL=7.5Ω VIN VOUT D G P.G 50Ω S CPH3448 Ordering Information Device CPH3448-TL-H Package Shipping memo CPH3 3,000pcs./reel Pb Free and Halogen Free No. A1648-2/7 CPH3448 ID -- VDS VDS=10V 4.5 4.0 2.0 1.5 1.5V 1.0 3.5 3.0 2.5 2.0 1.5 0 0.5 VGS=1.2V 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS -- V 0 1.0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 60 40 20 0 1 2 3 4 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V 100 1.4 1.6 1.8 2.0 IT14345 A =0.5 V, I D 8 . 1 = VGS A =1.0 V, I D 5 . 2 = A VGS =2.0 V, I D 5 . 4 = VGS 80 60 40 20 --40 --20 0 20 40 60 80 100 120 140 160 IT14347 IS -- VSD 7 5 VGS=0V 3 2 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 1.2 Ambient Temperature, Ta -- °C 3 2 °C 25 -- = Ta 1.0 75 7 °C °C 25 5 3 1.0 7 5 3 2 0.1 7 5 3 2 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 Drain Current, ID -- A 3 0.01 5 3 td(off) 3 tf 2 td(on) 10 tr 7 5 0.6 0.8 1.0 1.2 IT14349 f=1MHz 7 5 Ciss, Coss, Crss -- pF 100 0.4 Ciss, Coss, Crss -- VDS 1000 2 5 0.2 Diode Forward Voltage, VSD -- V VDD=15V VGS=4.5V 7 0 IT14348 SW Time -- ID 5 Switching Time, SW Time -- ns 1.0 120 0 --60 10 VDS=10V 5 0.8 RDS(on) -- Ta IT14346 | yfs | -- ID 7 0.6 Ta= 75°C 25°C --25 °C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 80 0 0.4 140 ID=1A 2A 0.5A 100 0.2 Gate-to-Source Voltage, VGS -- V Ta=25°C 120 0 IT14344 RDS(on) -- VGS 140 25°C 1.0 0.5 --25°C 2.5 Ta=7 5°C Drain Current, ID -- A 3.0 ID -- VGS 5.0 1.8V 7.0V 4.5V 3.5 Drain Current, ID -- A 3.5V 2.5V 4.0 Ciss 3 2 100 7 Coss 5 Crss 3 2 3 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Drain Current, ID -- A 2 3 5 7 10 IT14350 10 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT14351 No. A1648-3/7 CPH3448 VGS -- Qg 4.0 10 7 5 3.5 3.0 2.5 2.0 1.5 1.0 7 5 3 2 0.1 7 5 0.5 3 2 0 1 2 3 4 5 Total Gate Charge, Qg -- nC PD -- Ta 1.2 6 IT14352 ASO IDP=16A (PW≤10μs) 100 1m ID=4A DC 10 op μs s 10 3 2 1.0 0 Allowable Power Dissipation, PD -- W 3 2 VDS=15V ID=4A Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 4.5 ms 0m s n( Ta =2 5°C ) era tio Operation in this area is limited by RDS(on). Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 Drain-to-Source Voltage, VDS -- V 3 5 IT15325 When mounted on ceramic substrate (900mm2×0.8mm) 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT15326 No. A1648-4/7 CPH3448 Embossed Taping Specification CPH3448-TL-H No. A1648-5/7 CPH3448 Outline Drawing CPH3448-TL-H Land Pattern Example Mass (g) Unit 0.013 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 No. A1648-6/7 CPH3448 Note on usage : Since the CPH3448 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. 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Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2012. Specifications and information herein are subject to change without notice. PS No. A1648-7/7