SANYO ENA1401A

CPH5871
Ordering number : ENA1401A
SANYO Semiconductors
DATA SHEET
MOSFET : N-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
CPH5871
General-Purpose Switching Device
Applications
Features
•
•
•
•
Composite type with a N-channel sillicon MOSFET and a schottky barrier diode contained in one package
facilitating high-density mounting
• Protection diode in
Halogen free compliance
• 1.8V drive
[MOSFET] • Ultrahigh-speed switching
• Short reverse recovery time
• Low forward voltage
[SBD]
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
[MOSFET]
Drain-to-Source Voltage
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
30
ID
IDP
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
PD
Tch
Storage Temperature
Tstg
V
±12
V
3.5
A
PW≤10μs, duty cycle≤1%
14
A
When mounted on ceramic substrate (600mm2×0.8mm) 1unit
0.9
W
150
°C
--55 to +125
°C
30
V
[SBD]
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
VRRM
VRSM
IO
Junction Temperature
IFSM
Tj
Storage Temperature
Tstg
50Hz sine wave, 1 cycle
35
V
1
A
10
A
--55 to +125
°C
--55 to +125
°C
Product & Package Information
unit : mm (typ)
7017A-005
• Package
: CPH5
• JEITA, JEDEC
: SC-74A, SOT-25
• Minimum Packing Quantity : 3,000 pcs./reel
5
4
CPH5871-TL-H
0.15
2.9
3
Packing Type : TL
Marking
YZ
0.05
1.6
2.8
0.2
0.6
Package Dimensions
LOT No.
Repetitive Peak Reverse Voltage
0.9
0.2
0.6
TL
1
2
0.95
0.4
1 : Cathode
2 : Drain
3 : Gate
4 : Source
5 : Anode
Electrical Connection
5
4
3
SANYO : CPH5
1
2
http://semicon.sanyo.com/en/network
61312 TKIM/12809PE MSIM TC-00001794 No. A1401-1/7
CPH5871
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
V(BR)DSS
IDSS
ID=1mA, VGS=0V
VDS=30V, VGS=0V
IGSS
VGS(off)
| yfs |
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
0.4
VDS=10V, ID=2A
2.0
RDS(on)1
ID=2A, VGS=4.5V
40
52
mΩ
RDS(on)2
ID=1A, VGS=2.5V
53
74
mΩ
RDS(on)3
ID=0.5A, VGS=1.8V
82
132
mΩ
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
30
V
1
μA
±10
μA
1.3
V
3.4
S
430
pF
59
pF
Crss
38
pF
td(on)
tr
10
ns
41
ns
36
ns
Fall Time
td(off)
tf
Total Gate Charge
Qg
VDS=10V, f=1MHz
See specified Test Circuit.
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
IS=3.5A, VGS=0V
VR
VF1
IR=0.5mA
IF=0.7A
VF2
IF=1A
VR=16V
Interterminal Capacitance
IR
C
Reverse Recovery Time
trr
VDS=15V, VGS=4.5V, ID=3.5A
37
ns
4.7
nC
0.8
nC
1.1
nC
0.8
1.2
V
0.45
0.5
V
0.48
0.53
[SBD]
VR=10V, f=1MHz, 1 cycle
IF=IR=100mA, See specified Test Circuit.
Switching Time Test Circuit
(MOSFET)
4.5V
0V
D
PW=10μs
D.C.≤1%
27
pF
10
ns
Duty≤10%
ID=2A
RL=7.5Ω
VOUT
VIN
μA
trr Test Circuit
(SBD)
VDD=15V
VIN
V
15
50Ω
100Ω
10Ω
10mA
Reverse Current
V
100mA
Forward Voltage
30
100mA
Reverse Voltage
10μs
--5V
G
trr
P.G
50Ω
S
CPH5871
Ordering Information
Device
CPH5871-TL-H
Package
Shipping
memo
CPH5
3,000pcs./reel
Pb Free and Halogen Free
No. A1401-2/7
CPH5871
ID -- VDS
2.5
2.0
1.5
1.5V
1.0
0.5
VGS=1.2V
0
0.1
0.2
0.4
0.5
0.6
0.7
0.8
0.9
120
A
=0.5
V, I D
100
=1.8
VGS
80
1.0A
I D=
,
V
5
=2.
2.0A
VGS
, I D=
4.5V
=
VGS
60
40
20
0
--60
--40
--20
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
IS -- VSD
7
5
140
1
2
3
4
5
6
7
8
| yfs | -- ID
9
10
IT14372
[MOSFET]
VDS=10V
5
3
2
C
5°
-2
=-
Ta
1.0
7
75
°C
°C
25
5
3
2
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
IT14348
SW Time -- ID
[MOSFET]
VDD=15V
VGS=4.5V
3
Switching Time, SW Time -- ns
Ta=
75°C
25°C
--25
°C
Source Current, IS -- A
0
2
100
7
5
td(off)
3
tf
2
td(on)
10
tr
7
5
3
0
0.2
0.4
0.6
0.8
1.0
2
0.01
1.2
Diode Forward Voltage, VSD -- V
IT14349
Ciss, Coss, Crss -- VDS [MOSFET]
1000
Ciss
3
2
100
7
Coss
5
Crss
3
2
0
5
10
15
20
25
Drain-to-Source Voltage, VDS -- V
30
IT14351
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
IT14350
VGS -- Qg
4.5
Gate-to-Source Voltage, VGS -- V
5
2
Drain Current, ID -- A
f=1MHz
7
Ciss, Coss, Crss -- pF
20
5
2
10
40
Drain Current, ID -- A
[MOSFET]
3
0.01
60
IT14373
1.0
7
5
0.1
7
5
80
0.1
0.01
3
2
100
7
VGS=0V
3
ID=1A
2A
0.5A
Gate-to-Source Voltage, VGS -- V
160
2
[MOSFET]
Ta=25°C
120
0
1.0
Drain-to-Source Voltage, VDS -- V
IT14371
RDS(on) -- Ta
[MOSFET]
140
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
0.3
Forward Transfer Admittance, | yfs | -- S
0
RDS(on) -- VGS
140
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
3.0
[MOSFET]
1.8V
7.0V 4.5V
3.5
Drain Current, ID -- A
3.5V
2.5V
4.0
[MOSFET]
VDS=15V
ID=3.5A
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
1
2
3
4
5
Total Gate Charge, Qg -- nC
6
IT14374
No. A1401-3/7
CPH5871
ASO
IDP=14A
10
7
5
Drain Current, ID -- A
[MOSFET]
PW≤10μs
100
1m μs
s
ID=3.5A
3
2
10
DC
1.0
7
5
op
Operation in this area
is limited by RDS(on).
3
2
0.1
7
5
10
ms
0m
era
s
tio
n(T
a=
25
°C
)
Ta=25°C
Single pulse
When mounted on ceramic substrate (600mm2×0.8mm)1unit
3
2
0.01
0.1
2
3
5
7 1.0
2
3
5
7 10
2
3
Drain-to-Source Voltage, VDS -- V
[SBD]
2
3
2
0.1
7
5
0.2
0
20
40
0.1
0
0.2
0.3
0.4
0.5
0.6
0.7
Forward Voltage, VF -- V
(2) (4)(3)
360°
0.5
Sine wave
0.4
180°
360°
0.3
0.2
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
0.1
0
0
0.2
0.4
0.6
0.8
140
160
IT14376
[SBD]
75°C
50°C
10
5
25°C
1.0
5
0°C
0.1
5
0.01
5
--25°C
0
5
10
IFSM -- t
15
20
25
30
C -- VR
3
35
IT09554
[SBD]
2
100
7
5
3
2
10
1.0
Average Output Current, IO -- A
14
120
Reverse Voltage, VR -- V
Interterminal Capacitance, C -- pF
(1)
θ
0.6
100
Ta=125°C
100°C
100
5
0.0001
[SBD]
Rectangular
wave
0.7
80
IR -- VR
10000
5
IT09553
PF(AV) -- IO
0.8
60
0.001
5
Ta=
1
2
Average Forward Power Dissipation, PF(AV) -- W
0.4
Ambient Temperature, Ta -- °C
Reverse Current, IR -- μA
5
25°
C
100
°C
75°C
50°C
25°C
0°C
--25°C
Forward Current, IF -- A
7
3
Surge Forward Current, IFSM(Peak) -- A
0.6
1000
5
1.0
0.01
0.8
0
5
[MOSFET]
When mounted on ceramic substrate
(600mm2×0.8mm) 1unit
0.9
IT14375
IF -- VF
3
PD -- Ta
1.0
Allowable Power Dissipation, PD -- W
3
2
1.2
IT09555
[SBD]
7
0.1
2
3
5
7 1.0
2
3
5
7 10
Reverse Voltage, VR -- V
2
3
5
IT09556
Current waveform 50Hz sine wave
12
IS
20ms
t
10
8
6
4
2
0
7 0.01
2
3
5
7 0.1
2
Time, t -- s
3
5
7 1.0
2
3
ID00435
No. A1401-4/7
CPH5871
Embossed Taping Specification
CPH5871-TL-H
No. A1401-5/7
CPH5871
Outline Drawing
CPH5871-TL-H
Land Pattern Example
Mass (g) Unit
0.02
mm
* For reference
Unit: mm
2.4
1.4
0.6
0.95
0.95
No. A1401-6/7
CPH5871
Note on usage : Since the CPH5871 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
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"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
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condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
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This catalog provides information as of June, 2012. Specifications and information herein are subject
to change without notice.
PS No. A1401-7/7