MCH3481 Ordering number : ENA1767 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH3481 Low Votage Drive Switching Device Applications Features • • ON-resistance RDS(on)1=80mΩ (typ.) Halogen free compliance • • 1.2V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Channel Temperature PD Tch Storage Temperature Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 0.25 1.6 TL 0.25 1 0.65 2 Electrical Connection 0.3 3 0.07 0.85 2.1 FN LOT No. 0 t o 0.02 A W Marking LOT No. 3 8 0.8 °C • Package : MCPH3 • JEITA, JEDEC : SC-70, SOT-323 • Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL A °C Product & Package Information MCH3481-TL-H V 2 150 unit : mm (typ) 7019A-003 0.15 V ±9 --55 to +150 Package Dimensions 2.0 Unit 20 1 : Gate 2 : Source 3 : Drain 1 SANYO : MCPH3 2 http://semicon.sanyo.com/en/network 61312TKIM TC-00002669 No. A1767-1/7 MCH3481 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Conditions Ratings min typ Unit max V(BR)DSS IDSS ID=1mA, VGS=0V VDS=20V, VGS=0V IGSS VGS(off) | yfs | VGS=±7.2V, VDS=0V RDS(on)1 ID=1A, VGS=4.5V 80 104 mΩ RDS(on)2 ID=0.5A, VGS=2.5V 105 147 mΩ RDS(on)3 ID=0.3A, VGS=1.8V 135 203 mΩ RDS(on)4 ID=0.1A, VGS=1.2V 270 540 mΩ Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time 20 VDS=10V, ID=1mA V 0.3 VDS=10V, ID=1A 1 μA ±10 μA 0.9 2.4 V S 175 pF 30 pF Crss 25 pF 6.6 ns Rise Time td(on) tr 27 ns Turn-OFF Delay Time td(off) Fall Time tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=10V, f=1MHz See specified Test Circuit. VDS=10V, VGS=4.5V, ID=2A 28 ns 19 ns 2.9 nC 0.46 nC 0.53 IS=2A, VGS=0V 0.85 nC 1.2 V Switching Time Test Circuit 4.5V 0V VDD=10V VIN ID=1A RL=10Ω VIN D PW=10μs D.C.≤1% VOUT G MCH3481 P.G 50Ω S Ordering Information Device MCH3481-TL-H Package Shipping memo MCPH3 3,000pcs./reel Pb Free and Halogen Free No. A1767-2/7 MCH3481 1.2V 1.0 0.5 VGS=1.0V 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID=0.1A 0.3A 0.5A 1.0A 400 300 200 100 0 2 4 6 1.0 1.2 1.4 1.6 1.8 VDS=10V 2.0 IT15670 =0.1A .2V, I D V GS=1 250 200 0.3A A , I D= I =0.5 =1.8V 2.5V, D S VG V GS= 150 100 A V, I D=1.0 V GS=4.5 50 --40 --20 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT15672 IS -- VSD VGS=0V 3 2 3 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 300 5 5 2 5°C --2 = a C T 75° 1.0 7 5 25 °C 3 2 1.0 7 5 3 2 0.1 7 5 0.4 0.6 3 2 0.1 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Drain Current, ID -- A 2 0.01 3 0 0.2 0.8 1.0 VDD=10V VGS=4.5V Switching Time, SW Time -- ns 450 350 VGS=1.2V 300 250 200 150 1.8V 2.5V 100 4.5V 50 0 0.001 2 3 5 70.01 2 3 5 7 0.1 2 3 IT15674 SW Time -- ID 2 400 1.2 Diode Forward Voltage, VSD -- V IT15673 RDS(on) -- ID 500 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0.8 350 IT15671 | yfs | -- ID 0.6 RDS(on) -- Ta 0 --60 8 Gate-to-Source Voltage, VGS -- V 7 0.4 400 700 500 0.2 Gate-to-Source Voltage, VGS -- V Ta=25°C 600 0 IT15669 RDS(on) -- VGS 800 0 1.0 25°C --25°C 0 Drain-to-Source Voltage, VDS -- V 0 1 Ta= 75° C 0 2 Ta= 75° C 25° --25°C C Drain Current, ID -- A 1.5 25° C 2.5V 1.8V 4.5V 5V ID -- VGS VDS=10V 1. 6.0V Drain Current, ID -- A 3 Ta= --25 °C 75 ° C ID -- VDS 2.0 100 7 5 td(off) 3 tf 2 tr 10 td(on) 7 5 3 5 7 1.0 Drain Current, ID -- A 2 3 5 7 10 IT16213 2 0.1 2 3 5 7 1.0 Drain Current, ID -- A 2 3 5 IT15675 No. A1767-3/7 MCH3481 Ciss, Coss, Crss -- VDS 7 Gate-to-Source Voltage, VGS -- V 5 Ciss, Coss, Crss -- pF 3 2 Ciss 100 7 5 Coss 3 2 Crss VGS -- Qg 5 f=1MHz VDS=10V ID=2A 4 3 2 1 10 0 2 4 6 8 10 12 14 16 18 Drain-to-Source Voltage, VDS -- V Drain Current, ID -- A 10 7 5 3 2 10 ID=2A DC 3 2 0μ s 1m s 10 m 10 0m s op s er 3 2 0.1 7 5 ati on Operation in this area is limited by RDS(on). Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 1 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 IT16931 2 3 Total Gate Charge, Qg -- nC PD -- Ta 1.0 IDP=8A(PW≤10μs) 1.0 7 5 0 IT15676 ASO 2 0 20 Allowable Power Dissipation, PD -- W 7 IT15677 When mounted on ceramic substrate (900mm2×0.8mm) 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT16932 No. A1767-4/7 MCH3481 Taping Specification MCH3481-TL-H No. A1767-5/7 MCH3481 Outline Drawing MCH3481-TL-H Land Pattern Example Mass (g) Unit 0.007 mm * For reference Unit: mm 2.1 0.6 0.4 0.65 0.65 No. A1767-6/7 MCH3481 Note on usage : Since the MCH3481 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 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Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2012. Specifications and information herein are subject to change without notice. PS No. A1767-7/7