MBR10L60CTG, MBRF10L60CTG Switch‐mode Power Rectifier 60 V, 10 A www.onsemi.com Features and Benefits • • • • • • SCHOTTKY BARRIER RECTIFIER 10 AMPERES, 60 VOLTS Low Forward Voltage Low Power Loss/High Efficiency High Surge Capability 10 A Total (5 A Per Diode Leg) Guard−Ring for Stress Protection These Devices are Pb−Free and are RoHS Compliant 1 2, 4 3 Applications • Power Supply − Output Rectification • Power Management • Instrumentation MARKING DIAGRAMS 4 Mechanical Characteristics: • • • • • Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight (Approximately): 1.9 Grams Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds TO−220 CASE 221A STYLE 6 1 2 3 TO−220 FULLPAK] CASE 221D STYLE 3 1 2 AYWW B10L60G AKA AYWW B10L60G AKA 3 A Y WW B10L60 G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Device = Polarity Designator ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2015 January, 2015 − Rev. 1 1 Publication Order Number: MBR10L60CT/D MBR10L60CTG, MBRF10L60CTG MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit VRRM VRWM VR 60 V IF(AV) 5 10 A IFSM 200 A Operating Junction Temperature (Note 1) TJ −55 to +150 °C Storage Temperature Tstg −65 to +175 °C Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC = 140°C (Per Leg) (Per Device) Non-repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) ESD Ratings: Machine Model = C Human Body Model = 3B V > 400 > 8000 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Rating Symbol Value Unit °C/W Maximum Thermal Resistance MBR10L60CTG Junction−to−Case Junction−to−Ambient MBRF10L60CTG Junction−to−Case Junction−to−Ambient RqJC RqJA 2.8 70 RqJC RqJA 5.7 75 Typ Max 0.49 0.43 0.60 0.53 0.57 0.49 0.66 0.61 77 33 220 60 ELECTRICAL CHARACTERISTICS (Per Diode Leg) Rating Symbol Maximum Instantaneous Forward Voltage (Note 2) (IF = 5 A, TC = 25°C) (IF = 5 A, TC = 125°C) (IF = 10 A, TC = 25°C) (IF = 10 A, TC = 125°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 25°C) (Rated DC Voltage, TC = 125°C) iR Unit V mA mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. DEVICE ORDERING INFORMATION Device Order Number MBR10L60CTG MBRF10L60CTG Package Type Shipping TO−220 (Pb−Free) 50 Units / Rail TO−220 FULLPAK (Pb−Free) 50 Units / Rail www.onsemi.com 2 MBR10L60CTG, MBRF10L60CTG 100 IF, AVERAGE FORWARD CURRENT (A) IF, AVERAGE FORWARD CURRENT (A) 100 10 125°C 1 85°C 150°C TJ = 25°C 0.1 0 125°C 10 150°C TJ = 25°C 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage 1.0E+00 150°C 125°C 1.0E−02 125°C 1.0E−02 85°C 1.0E−03 150°C 1.0E−01 IR, REVERSE CURRENT (A) IR, REVERSE CURRENT (A) 1.0E−01 85°C 1.0E−03 1.0E−04 1.0E−04 TJ = 25°C 1.0E−05 0 10 TJ = 25°C 1.0E−05 20 30 40 VR, REVERSE VOLTAGE (V) 50 60 1.0E−06 0 Figure 3. Typical Reverse Current IF, AVERAGE FORWARD CURRENT (A) dc 7 6 20 30 40 VR, REVERSE VOLTAGE (V) 50 60 6 RqJC = 2.8°C/W 9 8 10 Figure 4. Maximum Reverse Current 10 IF, AVERAGE FORWARD CURRENT (A) 0.2 0.4 0.6 0.8 1 1.2 1.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 2. Maximum Forward Voltage 1.0E+00 1.0E−06 85°C 1 SQUARE WAVE 5 4 3 2 1 0 110 115 120 125 130 135 140 145 150 155 160 RqJA = 70°C/W 5 4 dc 3 SQUARE WAVE 2 1 0 0 20 40 60 80 100 120 140 160 TC, CASE TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C) Figure 5. Current Derating, Case per Leg MBR10L60CT Figure 6. Current Derating, Ambient per Leg MBR10L60CT www.onsemi.com 3 MBR10L60CTG, MBRF10L60CTG 6 RqJC = 5.7°C/W 9 IF, AVERAGE FORWARD CURRENT (A) IF, AVERAGE FORWARD CURRENT (A) 10 dc 8 7 6 SQUARE WAVE 5 4 3 2 1 0 80 RqJA = 75°C/W 5 dc 4 3 2 SQUARE WAVE 1 0 90 100 110 120 130 140 TC, CASE TEMPERATURE (°C) 150 160 0 R(t), TRANSIENT THERMAL RESISTANCE 40 60 80 100 120 140 160 TA, AMBIENT TEMPERATURE (°C) Figure 8. Current Derating, Ambient per Leg MBRF10L60CT 8 10000 TJ = 150°C 7 TJ = 25°C C, CAPACITANCE (pF) PFO, AVERAGE POWER DISSIPATION (W) Figure 7. Current Derating, Case per Leg MBRF10L60CT 20 6 5 SQUARE WAVE 4 dc 3 2 1000 100 1 10 0 0 1 2 3 4 5 6 7 8 9 0 10 10 20 30 40 50 IO, AVERAGE FORWARD CURRENT (A) VR, REVERSE VOLTAGE (V) Figure 9. Forward Power Dissipation Figure 10. Capacitance 60 10 D = 0.5 1 0.2 0.1 0.05 0.1 P(pk) 0.01 t1 t2 SINGLE PULSE DUTY CYCLE, D = t1/t2 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1, TIME (sec) Figure 11. Thermal Response Junction−to−Case for MBR10L60CT www.onsemi.com 4 100 1000 R(t), TRANSIENT THERMAL RESISTANCE MBR10L60CTG, MBRF10L60CTG 100 D = 0.5 10 1 0.2 0.1 0.05 0.02 0.01 0.1 SINGLE PULSE 0.01 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (sec) 1 10 100 1000 R(t), TRANSIENT THERMAL RESISTANCE Figure 12. Thermal Response Junction−to−Ambient for MBR10L60CT 10 D = 0.5 0.2 1 0.1 0.05 0.02 0.1 0.01 SINGLE PULSE 0.01 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) R(t), TRANSIENT THERMAL RESISTANCE Figure 13. Thermal Response Junction−to−Case for MBRF10L60CT 100 D = 0.5 0.2 0.1 10 0.05 0.02 1 0.01 0.1 SINGLE PULSE 0.01 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 PULSE TIME (sec) Figure 14. Thermal Response Junction−to−Ambient for MBRF10L60CT www.onsemi.com 5 100 1000 MBR10L60CTG, MBRF10L60CTG PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 N STYLE 6: PIN 1. 2. 3. 4. www.onsemi.com 6 ANODE CATHODE ANODE CATHODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 MBR10L60CTG, MBRF10L60CTG PACKAGE DIMENSIONS TO−220 FULLPAK CASE 221D−03 ISSUE K −T− −B− F SEATING PLANE C S Q NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. U A 1 2 3 H −Y− K G N L D J R 3 PL 0.25 (0.010) M B M Y DIM A B C D F G H J K L N Q R S U INCHES MIN MAX 0.617 0.635 0.392 0.419 0.177 0.193 0.024 0.039 0.116 0.129 0.100 BSC 0.118 0.135 0.018 0.025 0.503 0.541 0.048 0.058 0.200 BSC 0.122 0.138 0.099 0.117 0.092 0.113 0.239 0.271 MILLIMETERS MIN MAX 15.67 16.12 9.96 10.63 4.50 4.90 0.60 1.00 2.95 3.28 2.54 BSC 3.00 3.43 0.45 0.63 12.78 13.73 1.23 1.47 5.08 BSC 3.10 3.50 2.51 2.96 2.34 2.87 6.06 6.88 STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE FULLPAK is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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