MBR2535CTLG Switch-mode Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 150°C Operating Junction Temperature 25 A Total (12.5 A Per Diode Leg) This Device is Pb−Free and is RoHS Compliant* www.onsemi.com SCHOTTKY BARRIER RECTIFIER 25 AMPERES, 35 VOLTS Applications • Power Supply – Output Rectification • Power Management • Instrumentation 1 2, 4 3 Mechanical Characteristics • • • • • • 4 Case: Epoxy, Molded Epoxy Meets UL 94, V−0 @ 0.125 in Weight: 1.9 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperatures for Soldering Purposes: 260°C Max. for 10 Seconds ESD Rating: Human Body Model 3B Machine Model C 1 2 3 TO−220 CASE 221A STYLE 6 MARKING DIAGRAM AYWW B2535LG AKA A = Assembly Location Y = Year WW = Work Week B2535L = Device Code G = Pb−Free Package AKA = Polarity Designator ORDERING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2015 January, 2015 − Rev. 6 1 Device Package Shipping MBR2535CTLG TO−220 (Pb−Free) 50 Units/Rail Publication Order Number: MBR2535CTL/D MBR2535CTLG MAXIMUM RATINGS (Per Leg) Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 35 V Average Rectified Forward Current (TC = 142°C per Diode) (TC = 142°C per Device) IF(AV) Peak Repetitive Forward Current, per Leg (Sq Wave, 20 kHz, TC = 139°C) IFRM 25 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 1.0 A Storage Temperature Range Tstg −65 to +150 °C Operating Junction Temperature (Note 1) TJ −65 to +150 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms Controlled Avalanche Energy Waval 20 mJ Rating A 12.5 25 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Conditions Symbol Max Unit Maximum Thermal Resistance, Junction−to−Case Min. Pad RqJC 2.0 °C/W Maximum Thermal Resistance, Junction−to−Ambient Min. Pad RqJA 75.0 Min Typical Max − − − 0.51 0.41 0.33 0.55 0.47 0.41 − − 0.8 300 5.0 500 ELECTRICAL CHARACTERISTICS Characteristic Symbol Instantaneous Forward Voltage (Note 2) (iF = 25 Amps, Tj = 25°C) (iF = 12.5 Amps, Tj = 25°C) (iF = 12.5 Amps, Tj = 125°C) vF Instantaneous Reverse Current (Note 2) (Rated dc Voltage, Tj = 25°C) (Rated dc Voltage, Tj = 125°C) iR Unit V mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 100 IF, INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) MBR2535CTLG 150°C 10 125°C 1.0 25°C 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 100 150°C 10 125°C 1.0 25°C 0.1 0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 2. Maximum Forward Voltage IF(AV), AVERAGE FORWARD CURRENT (A) Figure 1. Typical Forward Voltage IR, REVERSE CURRENT (mA) 1,000 TJ = 125°C 100 TJ = 100°C 10 1.0 TJ = 25°C 0.1 5.0 10 15 20 25 30 35 dc RqJA = 16°C/W 12 10 8.0 6.0 dc 4.0 RqJA = 75°C/W No Heatsink 0 16 14 Square Wave 12 10 8.0 6.0 4.0 2.0 0 120 125 130 135 140 145 150 Figure 4. Current Derating, Case, Per Leg Square Wave 2.0 0 dc 18 Figure 3. Typical Reverse Current, Per Leg 18 14 20 TC, CASE TEMPERATURE (°C) 20 16 22 VR, REVERSE VOLTAGE (V) PF(AV), AVERAGE POWER DISSIPATION (W) IF(AV), AVERAGE FORWARD CURRENT (A) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 25 50 Square Wave 75 100 125 150 175 16 14 TJ = 150°C 12 10 Square Wave 8.0 dc 6.0 4.0 2.0 0 0 2.0 4.0 6.0 8.0 10 12 14 16 18 20 22 24 26 TA, AMBIENT TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (A) Figure 5. Current Derating, Ambient, Per Leg Figure 6. Forward Power Dissipation www.onsemi.com 3 155 MBR2535CTLG PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 N STYLE 6: PIN 1. 2. 3. 4. ANODE CATHODE ANODE CATHODE ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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