MBR60H100CT SWITCHMODE™ Power Rectifier 100 V, 60 A Features and Benefits • • • • • • http://onsemi.com Low Forward Voltage: 0.72 V @ 125°C Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 60 A Total (30 A Per Diode Leg) Pb−Free Package is Available SCHOTTKY BARRIER RECTIFIER 60 AMPERES 100 VOLTS 1 Applications • Power Supply − Output Rectification • Power Management • Instrumentation 2, 4 3 MARKING DIAGRAM 4 Mechanical Characteristics: • • • • • • Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 1.9 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds ESD Rating: Human Body Model = 3B Machine Model = C MAXIMUM RATINGS Please See the Table on the Following Page TO−220AB CASE 221A PLASTIC 1 2 AYWW B60H100G AKA 3 A Y WW B60H100 G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Package = Polarity Designator ORDERING INFORMATION Device MBR60H100CT MBR60H100CTG © Semiconductor Components Industries, LLC, 2006 July, 2006 − Rev. 1 1 Package Shipping TO−220 50 Units/Rail TO−220 (Pb−Free) 50 Units/Rail Publication Order Number: MBR60H100CT/D MBR60H100CT MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 100 V Average Rectified Forward Current (TC = 155°C) Per Diode Per Device IF(AV) Peak Repetitive Forward Current (Square Wave, 20 kHz, TC = 151°C) IFRM 60 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 350 A Operating Junction Temperature (Note 1) TJ +175 °C Storage Temperature Tstg *65 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms WAVAL 400 mJ > 400 > 8000 V A 30 60 Controlled Avalanche Energy (see test conditions in Figures 9 and 10) ESD Ratings: Machine Model = C Human Body Model = 3B Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit RqJC RqJA 1.0 70 °C/W Maximum Thermal Resistance − Junction−to−Case (Min. Pad) − Junction−to−Ambient (Min. Pad) ELECTRICAL CHARACTERISTICS (Per Diode Leg) Characteristic Symbol Maximum Instantaneous Forward Voltage (Note 2) (iF = 30 A, TJ = 25°C) (iF = 30 A, TJ = 125°C) (iF = 60 A, TJ = 25°C) (iF = 60 A, TJ = 125°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TJ = 125°C) (Rated DC Voltage, TJ = 25°C) iR 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 Min Typ Max − − − − 0.80 0.68 0.93 0.81 0.84 0.72 0.98 0.84 − − 2.0 0.0013 10 0.01 Unit V mA i , INSTANTANEOUS FORWARD CURRENT (AMPS F i , INSTANTANEOUS FORWARD CURRENT (AMPS F MBR60H100CT 100 175°C 10 TJ = 150°C 125°C 1.0 25°C 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 100 175°C 10 TJ = 150°C 1.0 25°C 0.1 0.0 0.1 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) IR, MAXIMUM REVERSE CURRENT (AMPS) 1E−03 TJ = 125°C 1E−04 1E−05 TJ = 25°C 1E−07 60 40 80 100 1.0 1.1 TJ = 125°C 1E−03 1E−04 1E−05 TJ = 25°C 1E−06 1E−07 1E−08 0 20 40 60 80 Figure 4. Maximum Reverse Current , AVERAGE FORWARD CURRENT (AMPS) SQUARE WAVE 28 24 20 16 12 8.0 140 145 150 155 160 165 170 1.2 TJ = 150°C Figure 3. Typical Reverse Current dc 135 0.9 VR, REVERSE VOLTAGE (VOLTS) 32 4.0 0 130 0.8 VR, REVERSE VOLTAGE (VOLTS) 48 44 40 36 0.6 0.7 1E−02 F (AV) , AVERAGE FORWARD CURRENT (AMPS) F (AV) I 20 1E−01 175 I IR, REVERSE CURRENT (AMPS) TJ = 150°C 1E−08 0 0.4 0.5 Figure 2. Maximum Forward Voltage 1E−01 1E−06 0.2 0.3 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage 1E−02 125°C 180 26 24 22 20 18 16 14 12 10 8.0 6.0 4.0 2.0 0 RATED VOLTAGE APPLIED RqJA = 16° C/W RqJA = 70° C/W (NO HEATSINK) dc SQUARE WAVE dc 0 TC, CASE TEMPERATURE (C°) 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 5. Current Derating, Case Per Leg Figure 6. Current Derating, Ambient Per Leg http://onsemi.com 3 100 175 60 56 52 48 44 40 36 32 28 24 20 16 12 8 4 0 10000 TJ = 175°C TJ = 25°C SQUARE WAVE C, CAPACITANCE (pF) P , AVERAGE FORWARD POWER DISSIPATION (WATTS F (AV) MBR60H100CT dc 1000 100 10 0 4 8 12 16 20 24 28 32 36 40 44 48 52 56 60 0 IF(AV), AVERAGE FORWARD CURRENT (AMPS) 20 40 60 80 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Forward Power Dissipation Figure 8. Capacitance http://onsemi.com 4 100 MBR60H100CT +VDD IL 10 mH COIL BVDUT VD MERCURY SWITCH ID ID IL DUT S1 VDD t0 Figure 9. Test Circuit t1 t2 t Figure 10. Current−Voltage Waveforms elements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from this equation that if the VDD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S1 was closed, Equation (2). The unclamped inductive switching circuit shown in Figure 9 was used to demonstrate the controlled avalanche capability of this device. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. When S1 is closed at t0 the current in the inductor IL ramps up linearly; and energy is stored in the coil. At t1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BVDUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t2. By solving the loop equation at the point in time when S1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the VDD power supply while the diode is in breakdown (from t1 to t2) minus any losses due to finite component resistances. Assuming the component resistive EQUATION (1): ǒ BV 2 DUT W [ 1 LI LPK AVAL 2 BV –V DUT DD EQUATION (2): 2 W [ 1 LI LPK AVAL 2 http://onsemi.com 5 Ǔ MBR60H100CT PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AD −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 STYLE 6: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 ANODE CATHODE ANODE CATHODE SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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