ONSEMI MJE270

MJE270 (NPN),
MJE271 (PNP)
Complementary Silicon
Power Transistors
Features
http://onsemi.com
• High Safe Operating Area
IS/B @ 40 V, 1.0 s = 0.375 A
• Collector−Emitter Sustaining Voltage
VCEO(sus) = 100 Vdc (Min)
• High DC Current Gain
hFE @ 120 mA, 10 V = 1500 (Min)
• Pb−Free Packages are Available*
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2.0 AMPERE
COMPLEMENTARY
POWER DARLINGTON
TRANSISTORS
100 VOLTS, 15 WATTS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VCEO
100
Vdc
Collector−Base Voltage
VCB
100
Vdc
Emitter−Base Voltage
VEB
5.0
Vdc
IC
2.0
4.0
Adc
Base Current
IB
0.1
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25_C
PD
15
0.12
W
W/_C
Total Power Dissipation @ TA = 25_C
Derate above 25_C
PD
1.5
0.012
W
W/_C
TJ, Tstg
−65 to +150
_C
Collector−Emitter Voltage
Collector Current
− Continuous
− Peak
Operating and Storage Junction
Temperature Range
TO−225
CASE 77
STYLE 3
3
MARKING DIAGRAM
1 BASE
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
8.33
_C/W
Thermal Resistance, Junction−to−Ambient
RqJA
83.3
_C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not normal
operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may be
affected.
YWW
JE27xG
2 COLLECTOR
3 EMITTER
THERMAL CHARACTERISTICS
Characteristic
2 1
Y
= Year
WW
= Work Week
JE27x = Specific Device Code
x= 0 or 1
G
= Pb−Free Package
ORDERING INFORMATION
Device
MJE270
MJE270G
MJE271
MJE271G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 6
1
Package
Shipping
TO−225
500 Units/Box
TO−225
(Pb−Free)
500 Units/Box
TO−225
500 Units/Box
TO−225
(Pb−Free)
500 Units/Box
Publication Order Number:
MJE270/D
MJE270 (NPN), MJE271 (PNP)
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
100
−
Vdc
Collector Cutoff Current
(VCE = 100 Vdc, IB = 0)
ICEO
−
1.0
mAdc
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
ICBO
−
0.3
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
−
0.1
mAdc
IS/b
375
−
Adc
500
1500
−
−
−
−
2.0
3.0
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 10 mAdc, IB = 0)
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(VCE = 40 Vdc, t = 1.0 s, Non−repetitive)
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 20 mAdc, VCE = 3.0 Vdc)
(IC = 120 mAdc, VCE = 10 Vdc)
hFE
−
Collector−Emitter Saturation Voltage
(IC = 20 mAdc, IB = 0.2 mAdc)
(IC = 120 mAdc, IB = 1.2 mAdc)
VCE(sat)
Base−Emitter On Voltage
(IC = 120 mAdc, VCE = 10 Vdc)
VBE(on)
−
2.0
Vdc
fT
6.0
−
MHz
Vdc
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (Note 2)
(IC = 0.05 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz)
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
2. fT = ⎪hfe⎪• ftest.
10
VCE = 3.0 V
150°C
IC, COLLECTOR CURRENT (AMPS)
hFE , DC CURRENT GAIN
10,000
7000
5000
3000
25°C
−55 °C
1000
700
500
300
100
0.015
0.03
0.05 0.07 0.1
0.3
0.5 0.7
IC, COLLECTOR CURRENT (AMPS)
1.0
1.5
5.0
1.0
dc
0.5
MJE270/MJE271
0.1
0.05
0.01
1.0
Figure 1. DC Current Gain
BONDING WIRE LIMIT
THERMAL LIMIT @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMIT
3.0
7.0 10
30
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 2. Safe Operating Area
http://onsemi.com
2
70
100
MJE270 (NPN), MJE271 (PNP)
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE Z
−B−
U
F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 077−01 THRU −08 OBSOLETE, NEW STANDARD
077−09.
C
Q
M
−A−
1 2 3
H
K
J
V
G
R
0.25 (0.010)
S
M
A
M
B
M
D 2 PL
0.25 (0.010)
M
A
M
B
M
DIM
A
B
C
D
F
G
H
J
K
M
Q
R
S
U
V
INCHES
MIN
MAX
0.425
0.435
0.295
0.305
0.095
0.105
0.020
0.026
0.115
0.130
0.094 BSC
0.050
0.095
0.015
0.025
0.575
0.655
5_ TYP
0.148
0.158
0.045
0.065
0.025
0.035
0.145
0.155
0.040
−−−
MILLIMETERS
MIN
MAX
10.80
11.04
7.50
7.74
2.42
2.66
0.51
0.66
2.93
3.30
2.39 BSC
1.27
2.41
0.39
0.63
14.61
16.63
5 _ TYP
3.76
4.01
1.15
1.65
0.64
0.88
3.69
3.93
1.02
−−−
STYLE 3:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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3
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MJE270/D