MJW18020 NPN Silicon Power Transistors High Voltage Planar The MJW18020 planar High Voltage Power Transistor is specifically Designed for motor control applications, high power supplies and UPS’s for which the high reproducibility of DC and Switching parameters minimizes the dead time in bridge configurations. Features • • • • • High and Excellent Gain Linearity Fast and Very Tight Switching Times Parameters tsi and tfi Very Stable Leakage Current due to the Planar Structure High Reliability Pb−Free Package is Available* Symbol Value Unit Collector−Emitter Sustaining Voltage VCEO 450 Vdc Collector−Base Breakdown Voltage VCES 1000 Vdc Collector−Base Voltage VCBO 1000 Vdc Emitter−Base Voltage VEBO 9.0 Vdc Collector Current − Continuous − Peak (Note 1) IC 30 45 Adc Base Current IB 6.0 10 Adc PD 250 2.0 W W/_C TJ, Tstg −65 to +150 _C − Continuous − Peak (Note 1) Total Power Dissipation @ TC = 25_C Derate Above 25_C Operating and Storage Junction Temperature Range 30 AMPERES 1000 VOLTS BVCES 450 VOLTS BVCEO, 250 WATTS 1 MAXIMUM RATINGS Rating http://onsemi.com 2 MARKING DIAGRAM MJW18020 AYWWG 1 BASE 3 EMITTER 2 COLLECTOR THERMAL CHARACTERISTICS Characteristic TO−247 CASE 340L 3 Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 0.5 _C/W Thermal Resistance, Junction−to−Ambient RqJA 50 _C/W Maximum Lead Temperature for Soldering Purposes: 1/8” from Case for 5 Seconds TL 275 _C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device Package Shipping MJW18020 TO−247 30 Units/Rail TO−247 (Pb−Free) 30 Units/Rail MJW18020G *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2010 March, 2010 − Rev. 2 1 Publication Order Number: MJW18020/D MJW18020 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit VCEO(sus) 450 − − Vdc Collector Cutoff Current (VCE = Rated VCEO, IB = 0) ICEO − − 100 mAdc Collector Cutoff Current (VCE = Rated VCES, VEB = 0) (TC = 125°C) ICES − − 100 500 mAdc Emitter Cutoff Current (VCE = 9 Vdc, IC = 0) IEBO − − 100 mAdc hFE 14 − 8 5 5.5 4 14 30 16 14 9 7 25 Characteristic OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) ON CHARACTERISTICS DC Current Gain (IC = 3 Adc, VCE = 5 Vdc) (IC = 10 Adc VCE = 2 Vdc) (IC = 20 Adc VCE = 2 Vdc) (IC = 10 mAdc VCE = 5 Vdc) (TC = 125°C) (TC = 125°C) (TC = 125°C) Base−Emitter Saturation Voltage (IC = 10 Adc, IB = 2 Adc) (IC = 20 Adc, IB = 4 Adc) VBE(sat) Collector−Emitter Saturation Voltage (IC = 10 Adc, IB = 2 Adc) VCE(sat) 34 − − − − − − 0.97 1.15 1.25 1.5 − − − − 0.2 0.3 0.5 0.9 0.6 − 1.5 2.0 fT − 13 − MHz Output Capacitance (VCB = 10 Vdc, IE = 0, ftest = 1 MHz) Cob − 300 500 pF Input Capacitance (VEB = 8.0) Cib − 7000 9000 pF tOn − 540 750 ns Storage Time ts − 4.75 6 ms Fall Time tf − 380 500 ns tOff − 5.2 6.5 ms tOn − 965 1200 ns ts − 2.9 3.5 ms tf − 350 500 ns tOff − 3.25 4 ms tfi − 142 250 ns Storage Time tsi − 4.75 6 ms Crossover Time tc − 320 500 ns tfi − 350 500 ns Storage Time tsi − 3.0 3.5 ms Crossover Time tc − 500 750 ns (TC = 125°C) (IC = 20 Adc, IB = 4 Adc) (TC = 125°C) Vdc Vdc DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product (IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz) SWITCHING CHARACTERISTICS: Resistive Load (D.C. = 10%, Pulse Width = 70 ms) Turn−On Time (IC = 10 Adc, IB1 = IB2 = 2 Adc, Vcc = 125 V) Turn−Off Time Turn−On Time Storage Time (IC= 20 Adc, IB1 = IB2 = 4 Adc, Vcc = 125 V) Fall Time Turn−Off Time SWITCHING CHARACTERISTICS: Inductive Load (Vclamp= 300 V , Vcc = 15 V, L = 200 mH) Fall Time Fall Time (IC = 10 Adc, IB1 = IB2 = 2 Adc) (IC = 20 Adc, IB1 = IB2 = 4 Adc) http://onsemi.com 2 MJW18020 TYPICAL CHARACTERISTICS 100 TJ = 25°C TJ = 125°C HFE, DC CURRENT GAIN HFE, DC CURRENT GAIN 100 TJ = −20°C 10 VCE = 2.0 V 1.0 0.01 0.1 1.0 10 TJ = −20°C 10 VCE = 5.0 V 1.0 0.01 100 0.1 IC, COLLECTOR CURRENT (A) 100 100.0 Ic/Ib = 10 VCE, VOLTAGE (VOLTS) Ic/Ib = 5.0 VCE, VOLTAGE (VOLTS) 10 Figure 2. DC Current Gain, VCE = 5.0 V 100.0 10.0 10.0 1.0 TJ = −20°C TJ = 125°C 0.1 0.0 0.001 0.1 1.0 TJ = −20°C TJ = 125°C 0.1 TJ = 25°C TJ = 25°C 0.01 1.0 10 0.0 0.001 100 IC, COLLECTOR CURRENT (A) 0.01 0.1 1.0 10 100 IC, COLLECTOR CURRENT (A) Figure 3. Typical Collector−Emitter Saturation Voltage, IC/IB = 5.0 Figure 4. Typical Collector−Emitter Saturation Voltage, IC/IB = 10 10.0 10.0 Ic/Ib = 10 VBE, VOLTAGE (VOLTS) Ic/Ib = 5.0 VBE, VOLTAGE (VOLTS) 1.0 IC, COLLECTOR CURRENT (A) Figure 1. DC Current Gain, VCE = 2.0 V TJ = −20°C 1.0 TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C 0.1 0.001 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (A) TJ = −20°C 1.0 TJ = 25°C TJ = 125°C 0.1 0.001 100 Figure 5. Typical Base−Emitter Saturation Voltage, IC/IB = 5.0 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (A) Figure 6. Typical Base−Emitter Saturation Voltage, IC/IB = 10 http://onsemi.com 3 100 MJW18020 TYPICAL CHARACTERISTICS IC, COLLECTOR CURRENT (AMPS) 100.00 Cib 1000 Cob 100 1 10 100 1.0 ms Extended SOA DC 10.00 10000 10 ms 5 ms 1 ms 1.00 0.10 0.01 10 100 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 8. Forward Bias Safe Operating Area 40 TC v 125°C Ic/Ib > 4 LC = 500 mH 30 20 −1.5 V 10 −5 V VBE = 0 V 0 0 200 1000 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 7. Typical Capacitance IC, COLLECTOR CURRENT (AMPS) C, CAPACITANCE (pF) 100000 400 600 800 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 9. Reverse Bias Safe Operating Area http://onsemi.com 4 1000 MJW18020 PACKAGE DIMENSIONS TO−247 CASE 340L−02 ISSUE E −T− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. C −B− E U N L 4 A −Q− 1 2 0.63 (0.025) 3 M T B M P −Y− K F 2 PL W J M Y Q MILLIMETERS MIN MAX 20.32 21.08 15.75 16.26 4.70 5.30 1.00 1.40 1.90 2.60 1.65 2.13 5.45 BSC 1.50 2.49 0.40 0.80 19.81 20.83 5.40 6.20 4.32 5.49 --4.50 3.55 3.65 6.15 BSC 2.87 3.12 INCHES MIN MAX 0.800 8.30 0.620 0.640 0.185 0.209 0.040 0.055 0.075 0.102 0.065 0.084 0.215 BSC 0.059 0.098 0.016 0.031 0.780 0.820 0.212 0.244 0.170 0.216 --0.177 0.140 0.144 0.242 BSC 0.113 0.123 H G D 3 PL 0.25 (0.010) DIM A B C D E F G H J K L N P Q U W S ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MJW18020/D