Si8465DB Datasheet

Si8465DB
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 20
ID
(A)a, e
0.104 at VGS = - 4.5 V
- 3.8
0.148 at VGS = - 2.5 V
- 3.2
Qg (Typ.)
6 nC
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switches, Battery Switches and Charger Switches
in Portable Device Applications
• DC/DC Converters
MICRO FOOT
Bump Side View
Backside View
S
G
1
D
S
3
4
XXX
2
8 465
S
G
Device Marking: 8465
xxx = Date/Lot Traceability Code
D
P-Channel MOSFET
Ordering Information: Si8465DB-T2-E1 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
- 20
Gate-Source Voltage
VGS
± 12
TA = 70 °C
TA = 25 °C
ID
Continuous Source-Drain Diode Current
IDM
TC = 25 °C
TA = 25 °C
IS
TA = 70 °C
TA = 25 °C
PD
Package Reflow Conditionsc
A
- 15
- 1.5a
- 0.65b
1.1a
0.78b
W
0.5b
TA = 70 °C
Operating Junction and Storage Temperature Range
- 2.5b
1.8a
TA = 25 °C
Maximum Power Dissipation
- 3a
- 2.0b
TA = 70 °C
Pulsed Drain Current
V
- 3.8a
TA = 25 °C
Continuous Drain Current (TJ = 150 °C)
Unit
TJ, Tstg
- 55 to 150
VPR
260
IR/Convection
260
°C
Notes:
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 10 s.
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 10 s.
c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering.
d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump.
e. Based on TA = 25 °C.
Document Number: 65363
S09-1922-Rev. A, 28-Sep-09
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Si8465DB
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambienta, b
t = 10 s
Maximum Junction-to-Ambientc, d
t = 10 s
RthJA
Typical
Maximum
55
70
125
160
Unit
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board with full copper.
b. Maximum under steady state conditions is 100 °C/W.
c. Surface mounted on 1" x 1" FR4 board with minimum copper.
d. Maximum under steady state conditions is 190 °C/W.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 20
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
ΔVDS/TJ
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
ID = - 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State
Resistancea
mV/°C
2.8
- 0.6
- 1.5
V
± 100
nA
VDS = - 20 V, VGS = 0 V
-1
VDS = - 20 V, VGS = 0 V, TJ = 70 °C
- 10
VDS ≤ - 5 V, VGS = - 4.5 V
RDS(on)
Forward Transconductancea
V
- 12
gfs
- 10
µA
A
VGS = - 4.5 V, ID = - 1.5 A
0.086
0.104
VGS = - 2.5 V, ID = - 1.5 A
0.122
0.148
VDS = - 10 V, ID = - 1.5 A
7
VDS = - 10 V, VGS = 0 V, f = 1 MHz
125
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
tr
12
18
6
9
VDS = - 10 V, VGS = - 4.5 V, ID = 1 A
0.85
VGS = - 0.1 V, f = 1 MHz
7.5
VDD = - 10 V, RL = 10 Ω
ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 1 Ω
Ω
20
30
20
30
40
10
15
td(on)
7
15
10
15
VDD = - 10 V, RL = 10 Ω
ID ≅ - 1 A, VGEN = - 10 V, Rg = 1 Ω
tr
td(off)
Fall Time
nC
2.2
tf
Rise Time
Turn-Off Delay Time
VDS = - 10 V, VGS = - 10 V, ID = - 1 A
25
td(off)
Fall Time
Turn-On Delay Time
pF
95
td(on)
Rise Time
Turn-Off Delay Time
450
tf
25
40
10
15
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Current
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
TA = 25 °C
- 1.5
A
- 15
IS = - 1 A, VGS = 0 V
IF = - 1 A, dI/dt = 100 A/µs, TJ = 25 °C
- 0.8
- 1.2
V
20
40
ns
10
20
nC
10
10
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 65363
S09-1922-Rev. A, 28-Sep-09
Si8465DB
Vishay Siliconix
15
5
12
4
ID - Drain Current (A)
ID - Drain Current (A)
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
VGS = 5 V thru 3 V
9
VGS = 2.5 V
6
3
2
TC = 25 °C
VGS = 2 V
3
TC = 125 °C
1
TC = - 55 °C
VGS = 1.5 V
0
0.0
0.5
1.0
1.5
2.0
2.5
0
0.0
3.0
0.5
1.0
1.5
2.0
2.5
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
Output Characteristics
800
0.25
600
0.20
C - Capacitance (pF)
RDS(on) - On-Resistance (Ω)
Ciss
VGS = 2.5 V
0.15
400
Coss
200
0.10
Crss
VGS = 4.5 V
0
0.05
0
3
6
9
12
0
15
4
8
16
20
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
Capacitance
On-Resistance vs. Drain Current and Gate Voltage
10
1.20
ID = 1 A
1.15
ID = 1.5 A
VGS = 4.5 V
8
VGS = 2.5 V
RDS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
12
VDS = 10 V
6
VDS = 5 V
VDS = 16 V
4
1.10
1.05
1.00
0.95
2
0.90
0
0
4
8
12
0.85
- 50
- 25
0
25
50
75
100
125
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 65363
S09-1922-Rev. A, 28-Sep-09
150
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Si8465DB
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.25
100
ID = 1.5 A
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
0.20
10
TJ = 150 °C
TJ = 25 °C
1
0.15
TJ = 125 °C
0.10
TJ = 25 °C
0.05
0.00
0.1
0.0
0.3
0.6
0.9
1.2
0
1.5
1
3
4
5
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
25
1.3
1.2
2
ID = 250 µA
20
Power (W)
V GS(th) (V)
1.1
1.0
0.9
15
10
0.8
5
0.7
0.6
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
10
100
1000
Time (s)
TJ - Temperature (°C)
Single Pulse Power, Junction-to-Ambient
Threshold Voltage
100
Limited by RDS(on)*
ID - Drain Current (A)
10
100 µs
1 ms
1
10 ms
100 ms,1s
0.1
10 s, DC
TA = 25 °C
Single Pulse
BVDSS
Limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
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Document Number: 65363
S09-1922-Rev. A, 28-Sep-09
Si8465DB
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
4
1.5
1.2
Power Dissipation (W)
ID - Drain Current (A)
3
2
1
0.9
0.6
0.3
0
0.0
0
25
50
75
100
TA - Ambient Temperature (°C)
Current Derating*
125
150
25
50
75
100
125
150
TA - Ambient Temperature (°C)
Power Derating
Note:
When Mounted on 1" x 1" FR4 with Full Copper.
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 65363
S09-1922-Rev. A, 28-Sep-09
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Si8465DB
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
0.05
PDM
0.02
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 100 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
100
10
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient (1" x 1" FR4 Board with Full Copper)
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 190 °C/W
0.02
3. TJM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient (1" x 1" FR4 Board with Minimum Copper)
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Document Number: 65363
S09-1922-Rev. A, 28-Sep-09
Si8465DB
Vishay Siliconix
PACKAGE OUTLINE
MICRO FOOT: 4-BUMP (2 x 2, 0.5 mm PITCH)
3
1
4
A1 A2
e
2
A
4 x Ø 0.24 to 0.26 Note 4
Solder Mask ~ Ø 0.25
Bump Note 2
Recommended Land
S
S
D
G
e
8465
s
XXX
D
4xØb
s
Mark on Backside of Die
e
D
Notes (Unless otherwise specified):
1. All dimensions are in millimeters.
2. Four (4) solder bumps are lead (Pb)-free 95.5Sn/3.8Ag/0.7Cu with diameter ∅ 0.30 mm to 0.32 mm.
3. Backside surface is coated with a Ti/Ni/Ag layer.
4. Non-solder mask defined copper landing pad.
5. • is location of pin 1.
Dim.
Millimetersa
Inches
Min.
Nom.
Max.
Min.
Nom.
Max.
A
0.462
0.505
0.548
0.0181
0.0198
0.0215
A1
0.220
0.250
0.280
0.0086
0.0098
0.0110
A2
0.242
0.255
0.268
0.0095
0.0100
0.0105
b
0.300
0.310
0.320
0.0118
0.0122
0.0126
e
0.500
0.0197
s
0.230
0.250
0.270
0.0090
0.0098
0.0106
D
0.920
0.960
1.000
0.0362
0.0378
0.0394
Notes:
a. Use millimeters as the primary measurement.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65363.
Document Number: 65363
S09-1922-Rev. A, 28-Sep-09
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Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
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information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
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Document Number: 91000
Revision: 18-Jul-08
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