Transistors 2SD1994A Silicon NPN epitaxial planer type Unit: mm 1.05 2.5±0.1 ±0.05 6.9±0.1 4.0 0.8 0.2 0.7 14.5±0.5 0.65 max. +0.1 2.5±0.5 3 2.5±0.1 2 +0.1 2.5±0.5 1 0.45−0.05 0.45−0.05 ■ Absolute Maximum Ratings Ta = 25°C Parameter 1.0 1.0 ■ Features • Low collector to emitter saturation voltage VCE(sat) • Output of 2 W to 3 W is obtained with a complementary pair with 2SB1322A • Allowing supply with the radial taping (1.45) 0.5 4.5±0.1 0.15 For low-frequency power amplification and driver amplification Complementary to 2SB1322A Symbol Rating Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5 V Peak collector current ICP 1.5 A Collector current IC 1 A Collector power dissipation * PC 1 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Note) In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1: Emitter 2: Collector 3: Base MT2 Type Package 1.2±0.1 0.65 max. 0.45+− 0.1 0.05 Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the board thickness of 1.7 mm for the collector portion (HW Type) ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit 0.1 µA Collector cutoff current ICBO VCB = 20 V, IE = 0 Collector to base voltage VCBO IC = 10 µA, IE = 0 60 Collector to emitter voltage VCEO IC = 2 mA, IB = 0 50 V Emitter to base voltage VEBO IE = 10 µA, IC = 0 5 V Forward current transfer ratio *1 hFE1 *2 VCE = 10 V, IC = 500 mA 85 hFE2 VCE = 5 V, IC = 1 A 50 V 340 100 Collector to emitter saturation voltage *1 VCE(sat) IC = 500 mA, IB = 50 mA 0.2 0.4 V Base to emitter saturation voltage *1 VBE(sat) IC = 500 mA, IB = 50 mA 0.85 1.2 V VCB = 10 V, IE = −50 mA, f = 200 MHz 200 VCB = 10 V, IE = 0, f = 1 MHz 11 Transition frequency *1 fT Collector output capacitance Cob MHz 20 pF Note) *1: Pulse measurement *2: Rank classification Rank Q R S No-rank hFE1 85 to 170 120 to 240 170 to 340 85 to 340 Product of no-rank is not classified and have no indication for rank. 1 2SD1994A Transistors PC Ta Ta = 25°C 1.25 0.8 0.6 0.4 IB = 10 mA 9 mA 8 mA 7 mA 1.00 6 mA 5 mA 0.75 4 mA 3 mA 0.50 2 mA 0.25 0.2 0 20 40 60 80 100 120 140 160 2 4 IC / IB = 10 1 25°C −25°C Ta = 100°C 0.03 0.01 0.003 0.001 0.01 0.03 0.1 0.3 1 3 3 120 100 80 60 40 20 −20−30 −50 −100 Emitter current IE (mA) 2 6 8 10 12 VCE = 10 V 25°C 100°C 0.3 0.1 400 300 Ta = 100°C 25°C 200 −25°C 100 0.03 0.1 0.3 1 3 0 0.01 0.03 10 Collector current IC (A) 30 20 10 1 3 10 1 3 10 VCER RBE 40 0 0.3 120 IE = 0 f = 1 MHz Ta = 25°C 50 0.1 Collector current IC (A) Cob VCB Collector output capacitance Cob (pF) Transition frequency fT (MHz) 140 −10 4 hFE IC Ta = −25°C 1 60 160 −2 −3 −5 2 500 10 0.01 0.01 0.03 10 VCB = 10 V Ta = 25°C 0 −1 0 Base current IB (mA) IC / IB = 10 fT IE 180 0 10 30 Collector current IC (A) 200 0.4 VBE(sat) IC 3 0.1 8 100 Base to emitter saturation voltage VBE(sat) (V) Collector to emitter saturation voltage VCE(sat) (V) VCE(sat) IC 0.3 6 0.6 0.2 1 mA 0 0.8 Collector to emitter voltage VCE (V) Ambient temperature Ta (°C) 10 1.0 Forward current transfer ratio hFE 0 VCE = 10 V Ta = 25°C Collector to emitter voltage VCER (V) 1.0 0 IC IB 1.2 Collector current IC (A) Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness Collector current IC (A) Collector power dissipation PC (W) IC VCE 1.50 1.2 30 100 Collector to base voltage VCB (V) IC = 10 mA Ta = 25°C 100 80 60 40 20 0 0.1 0.3 1 3 10 30 100 Base to emitter resistance RBE (kΩ) Transistors 2SD1994A ICEO Ta 104 Area of safe operation (ASO) 10 VCE = 10 V Single pulse Ta = 25°C 3 ICP Collector current IC (A) ICEO (Ta) ICEO (Ta = 25°C) 103 102 10 1 t = 10 ms IC t=1s 0.3 0.1 0.03 0.01 0.003 1 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (°C) 0.001 0.1 0.3 1 3 10 30 100 Collector to emitter voltage VCE (V) 3