Composite Transistors XP01554 (XP1554) Silicon NPN epitaxial planar type For high-speed switching Unit: mm (0.425) 0.20±0.05 4 5˚ ■ Features 0.2±0.1 1.25±0.10 2.1±0.1 5 0.12+0.05 –0.02 • Two elements incorporated into one package (Emitter-coupled transistors) • Reduction of the mounting area and assembly cost by one half • Low collector-emitter saturation voltage VCE(sat) 1 3 2 (0.65) (0.65) 1.3±0.1 2.0±0.1 0.9±0.1 ■ Basic Part Number ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 40 V Collector-emitter voltage (E-B short) VCEO 40 V Emitter-base voltage (Collector open) VCBO 5 V Collector current IC 100 mA Peak collector current ICP 300 mA Total power dissipation PT 150 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0 to 0.1 • 2SC3757 × 2 0.9+0.2 –0.1 10˚ 1: Base (Tr1) 2: Emitter 3: Base (Tr2) EIAJ: SC-88A 4: Collector (Tr2) 5: Collector (Tr1) SMini5-G1 Package Marking Symbol: EU Internal Connection 5 4 Tr1 Tr2 1 2 3 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Collector-base cutoff current (Emitter open) ICBO VCB = 15 V, IE = 0 0.1 µA Emitter-base cutoff current (Collector open) IEBO VEB = 4 V, IC = 0 0.1 µA 200 0.25 V hFE VCE = 1 V, IC = 10 mA Collector-emitter saturation voltage VCE(sat) IC = 10 mA, IB = 1 mA Base-emitter saturation voltage VBE(sat) IC = 10 mA, IB = 1 mA Forward current transfer ratio Transition frequency fT VCB = 10 V, IE = −10 mA, f = 200 MHz Min Typ 60 0.17 Max 1.0 450 Unit V MHz Cob VCB = 10 V, IE = 0, f = 1 MHz 2 Turn-on time ton Refer to the switching time measurement 17 ns Turn-off time toff circuit 17 ns Storage time tstg 10 ns Collector output capacitance (Common base, input open circuited) 6 pF Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Note) The part number in the parenthesis shows conventional part number. Publication date: February 2004 SJJ00150BED 1 XP01554 PC Ta Switching time measurement circuit tstg test circuit 0.1 µF 250 0.1 µF VOUT VOUT A 220 Ω 50 Ω VIN = 10 V 3.3 kΩ VCC = 3 V 3.3 kΩ 50 Ω VIN = 10 V 0.1 µF VBB = −3 V 90 Ω 500 Ω VCC = 10 V 500 Ω 50 Ω VBB = 2 V 10% VIN 1 kΩ 910 Ω Total power dissipation PT (mW) ton , toff test circuit 10% VIN 10% 90% VOUT VOUT 90% ton toff 10% 200 150 100 50 tstg (Waveform at A) 0 0 40 80 120 160 Ambient temperature Ta (°C) VCE(sat) IC IB = 3.0 mA 2.5 mA 80 2.0 mA 1.5 mA 60 1.0 mA 40 0.5 mA 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 10 1 25°C 0.01 0.1 Transition frequency fT (MHz) Forward current transfer ratio hFE 300 Ta = 75°C 25°C −25°C 10 Collector current IC (mA) 2 0.1 100 1 100 400 300 200 100 −10 −100 Emitter current IE (mA) SJJ00150BED 100 1 000 Cob VCB 500 0 −1 10 Collector current IC (mA) VCB = 10 V Ta = 25°C 400 1 10 Ta = −25°C 25°C 75°C 1 fT I E 500 0 0.1 10 0.01 1 600 VCE = 1 V 100 100 Collector current IC (mA) hFE IC 200 Ta = 75°C −25°C 0.1 Collector-emitter voltage VCE (V) 600 VBE(sat) IC IC / IB = 10 Base-emitter saturation voltage VBE(sat) (V) 100 100 −1 000 Collector output capacitance C (pF) (Common base, input open circuited) ob Collector current IC (mA) Ta = 25°C Collector-emitter saturation voltage VCE(sat) (V) IC VCE 120 6 IE = 0 f = 1 MHz Ta = 25°C 5 4 3 2 1 0 1 10 Collector-base voltage VCB (V) 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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