Power Transistors 2SB1554 Silicon PNP epitaxial planar type For power amplification Unit: mm 5.0±0.1 ■ Features Symbol Ratings Unit Collector to base voltage VCBO –60 V Collector to emitter voltage VCEO –60 V Emitter to base voltage VEBO –20 V Peak collector current ICP –8 A Collector current IC –4 A Base current IB –2 A Collector power TC=25°C 15 PC Ta=25°C dissipation Junction temperature Tj Storage temperature Tstg 150 ˚C –55 to +150 ˚C 1.2±0.1 C1.0 2.25±0.2 0.65±0.1 1.05±0.1 0.55±0.1 0.55±0.1 C1.0 1 2 3 2.5±0.2 2.5±0.2 1:Base 2:Collector 3:Emitter MT4 Type Package (TC=25˚C) Parameter max Unit VCB = –60V, IE = 0 –10 µA Symbol ICBO Collector cutoff current 0.35±0.1 W 2 ■ Electrical Characteristics 90° (TC=25˚C) Parameter 1.0 2.5±0.2 ■ Absolute Maximum Ratings 13.0±0.2 4.2±0.2 ● High forward current transfer ratio hFE which has satisfactory linearity Allowing automatic insertion with radial taping 18.0±0.5 Solder Dip ● 10.0±0.2 Conditions min typ ICEO VCE = –50V, IB = 0 –50 µA Emitter cutoff current IEBO VEB = –15V, IC = 0 –10 µA Collector to emitter voltage VCEO IC = –10mA, IB = 0 –60 hFE1* VCE = –4V, IC = – 0.8A 80 30 Forward current transfer ratio V 400 hFE2 VCE = –4V, IC = –2A Collector to emitter saturation voltage VCE(sat) IC = –2A, IB = –100mA Base to emitter saturation voltage VBE(sat) IC = –2A, IB = –100mA Transition frequency fT VCE = –10V, IC = – 0.5A, f = 1MHz 25 MHz Turn-on time ton IC = –2A, 0.4 µs Storage time tstg IB1 = –100mA, IB2 = 100mA, 0.6 µs Fall time tf VCC = –50V 0.25 µs *h FE1 –1.0 –1.5 V V Rank classification Rank Q P O hFE1 80 to 160 120 to 240 200 to 400 1 Power Transistors 2SB1554 PC — Ta IC — VCE (1) 10 5 –3.0 –30mA –2.5 –25mA –20mA –2.0 –15mA –1.5 –1.0 –5mA 0 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) –2 –4 VBE(sat) — IC –8 –10 –12 –14 –16 TC=–25˚C 100˚C – 0.3 – 0.1 – 0.03 –3 103 25˚C TC=100˚C –25˚C 102 10 Cob — VCB – 0.01 – 0.1 –1 Pulsed tw=1ms Duty cycle=1% IC/IB=20 (–IB1=IB2) VCC=–50V TC=25˚C 10 3 1 tstg ton 0.3 –30 10 3 1 –100 Collector to base voltage VCB (V) –1 –3 –10 Non repetitive pulse TC=25˚C –30 –10 ICP –3 IC t=1ms 10ms DC –1 – 0.3 tf 0.1 – 0.1 – 0.03 0.01 –10 30 Area of safe operation (ASO) 0.03 –3 100 –100 30 Switching time ton,tstg,tf (µs) 10 –10 Collector current IC (A) ton, tstg, tf — IC 102 –3 VCE=–10V f=1MHz TC=25˚C 300 0.1 – 0.01 – 0.03 – 0.1 – 0.3 –10 100 103 –1 Collector current IC (A) Collector current IC (A) 104 –1 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 0.3 1 – 0.001 –10 IE=0 f=1MHz TC=25˚C –25˚C fT — IC 104 Collector current IC (A) 1 – 0.1 – 0.3 25˚C Transition frequency fT (MHz) –3 –1 – 0.03 VCE=–4V Forward current transfer ratio hFE –10 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 TC=100˚C 1000 IC/IB=20 25˚C –1 hFE — IC 105 –30 –1 –3 Collector to emitter voltage VCE (V) –100 Base to emitter saturation voltage VBE(sat) (V) –6 –10 – 0.1 Collector current IC (A) 20 IC/IB=20 –30 – 0.3 –10mA – 0.5 (2) 0 Collector output capacitance Cob (pF) IB=–50mA –45mA –40mA –35mA –3.5 15 Collector to emitter saturation voltage VCE(sat) (V) TC=25˚C (1) TC=Ta (2) Without heat sink (PC=2.0W) 0 2 VCE(sat) — IC –100 –4.0 Collector current IC (A) Collector power dissipation PC (W) 20 0 –1 –2 –3 –4 Collector current IC (A) –5 – 0.01 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Power Transistors 2SB1554 Rth(t) — t Thermal resistance Rth(t) (˚C/W) 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink 1000 100 (1) (2) 10 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3