Power Transistors 2SB1490 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2250 Unit: mm φ 3.3±0.2 5.0±0.3 3.0 ■ Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –160 V Collector to emitter voltage VCEO –140 V Emitter to base voltage VEBO –5 V Peak collector current ICP –12 A Collector current IC –7 A dissipation Ta=25°C 90 PC Junction temperature Tj Storage temperature Tstg W 3.5 1.5 2.0±0.3 2.7±0.3 3.0±0.3 1.0±0.2 0.6±0.2 5.45±0.3 10.9±0.5 1 Collector power TC=25°C 2.0 1.5 Solder Dip ● 20.0±0.5 2.5 ● 1.5 Optimum for 80W HiFi output High foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat): < –2.5V ● 2.0 26.0±0.5 ■ Features 10.0 4.0 6.0 3.0 20.0±0.5 2 3 1:Base 2:Collector 3:Emitter TOP–3L Package Internal Connection C 150 ˚C –55 to +150 ˚C B E ■ Electrical Characteristics (TC=25˚C) Parameter Symbol Conditions min typ max Unit ICBO VCB = –160V, IE = 0 –100 µA ICEO VCE = –140V, IB = 0 –100 µA Emitter cutoff current IEBO VEB = –5V, IC = 0 –100 µA Collector to emitter voltage VCEO IC = –30mA, IB = 0 140 hFE1 VCE = –5V, IC = –1A 2000 hFE2* VCE = –5V, IC = –6A 5000 Collector cutoff current Forward current transfer ratio V 30000 Collector to emitter saturation voltage VCE(sat) IC = –6A, IB = –6mA –2.5 Base to emitter saturation voltage VBE(sat) IC = –6A, IB = –6mA –3.0 Transition frequency fT VCE = –10V, IC = – 0.5A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf *h FE2 IC = –6A, IB1 = –6mA, IB2 = 6mA, VCC = –50V V 20 MHz 1.0 µs 1.5 µs 1.2 µs Rank classification Rank hFE2 Q P 5000 to 15000 8000 to 30000 1 Power Transistors 2SB1490 PC — Ta IC — VCE VCE(sat) — IC –12 –100 150 100 (1) 50 IB=–5mA –10 Collector current IC (A) –8 –1mA – 0.9mA – 0.8mA – 0.7mA – 0.6mA – 0.5mA –6 – 0.4mA –4 – 0.3mA – 0.2mA –2 (3) (2) – 0.1mA 0 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) –2 –10 –12 –30 –10 VCE=–5V 30000 25˚C TC=100˚C –25˚C 3000 1000 –3 TC=–25˚C –1 25˚C –1 –3 –10 –30 300 100 30 10 – 0.01 – 0.03 – 0.1 – 0.3 –100 Collector current IC (A) –1 –3 –10 Collector current IC (A) ton, tstg, tf — IC Area of safe operation (ASO) 100 –100 Pulsed tw=1ms Duty cycle=1% IC/IB=1000 (–IB1=IB2) VCC=–50V TC=25˚C 10 3 tstg tf ton 1 Non repetitive pulse TC=25˚C –30 Collector current IC (A) 30 0.3 ICP –10 t=1ms IC 10ms –3 DC –1 – 0.3 0.1 – 0.1 – 0.03 0.03 0.01 0 –4 –8 –12 Collector current IC (A) –16 – 0.01 –1 25˚C –3 –25˚C –1 – 0.1 – 0.1 – 0.3 –1 –3 –10 –30 –100 Collector current IC (A) 1000 10000 100˚C TC=100˚C Cob — VCB 100000 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) IC/IB=1000 – 0.1 – 0.1 – 0.3 Switching time ton,tstg,tf (µs) –8 –10 hFE — IC – 0.3 2 –6 –30 Collector to emitter voltage VCE (V) VBE(sat) — IC –100 –4 IC/IB=1000 – 0.3 Collector output capacitance Cob (pF) Collector power dissipation PC (W) TC=25˚C (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=3.5W) Collector to emitter saturation voltage VCE(sat) (V) 200 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) IE=0 f=1MHz TC=25˚C 300 100 30 10 3 1 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Power Transistors 2SB1490 Rth(t) — t Thermal resistance Rth(t) (˚C/W) 1000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.3A (3W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 300 100 (1) 30 10 (2) 3 1 0.3 0.1 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3