Power Transistors 2SD2222 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1470 Unit: mm 4.0 Parameter Symbol Ratings Unit Collector to base voltage VCBO 160 V Collector to emitter voltage VCEO 160 V Emitter to base voltage VEBO 5 V Peak collector current ICP 15 A Collector current IC 8 A Collector power TC=25°C dissipation Ta=25°C 150 Tj Storage temperature Tstg 3.5 W 150 ˚C –55 to +150 ˚C 2.0 2.0 1.5 2.0±0.3 2.7±0.3 3.0±0.3 1.0±0.2 0.6±0.2 5.45±0.3 10.9±0.5 1 PC Junction temperature 10.0 26.0±0.5 (TC=25˚C) 1.5 Solder Dip ■ Absolute Maximum Ratings 1.5 ● Optimum for 120W HiFi output High foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat) 20.0±0.5 2.5 ● 3.0 6.0 ■ Features ● φ 3.3±0.2 5.0±0.3 3.0 20.0±0.5 2 3 1:Base 2:Collector 3:Emitter TOP–3L Package Internal Connection C B E ■ Electrical Characteristics (TC=25˚C) Symbol Parameter ICBO Collector cutoff current max Unit VCB = 160V, IE = 0 100 µA Conditions min typ ICEO VCE = 160V, IB = 0 100 µA Emitter cutoff current IEBO VEB = 5V, IC = 0 100 µA Collector to emitter voltage VCEO IC = 30mA, IB = 0 160 hFE1 VCE = 5V, IC = 1A 10000 hFE2* VCE = 5V, IC = 7A 3500 Collector to emitter saturation voltage VCE(sat) IC = 7A, IB = 7mA Base to emitter saturation voltage VBE(sat) IC = 7A, IB = 7mA Transition frequency fT VCE = 10V, IC = 0.5A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf Forward current transfer ratio *h FE2 IC = 7A, IB1 = 7mA, IB2 = –7mA, VCC = 50V V 20000 3 3 V V 20 MHz 2 µs 6 µs 1.2 µs Rank classification Rank hFE2 Q P 3500 to 10000 7000 to 20000 1 Power Transistors 2SD2222 IC — VCE (1) 9 IB=1.0mA Collector current IC (A) 140 120 100 80 60 8 0.9mA 7 0.8mA 6 0.7mA 5 0.6mA 4 3 40 2 20 (2) (3) 0 0 20 1 0.5mA 0.4mA 0.3mA 0 40 60 80 100 120 140 160 0 2 4 6 VBE(sat) — IC 12 14 16 TC=–25˚C 25˚C 125˚C 0.3 0.1 0.03 0.3 1 3 10 30 104 TC=125˚C 25˚C 102 10 0.03 100 0.3 1 3 10 30 Area of safe operation (ASO) Non repetitive pulse TC=25˚C 30 Collector current IC (A) ICP tstg 3 ton 1 tf 0.3 0.1 IC 10 t=1ms 10ms 3 DC 1 0.3 0.1 0.03 0.03 0.01 0.01 0 2 4 6 8 TC=–25˚C 25˚C 125˚C 0.3 0.1 0.03 0.01 0.1 0.3 10 Collector current IC (A) 12 1 3 10 30 100 1 3 10 30 100 300 IE=0 f=1MHz TC=25˚C 103 102 10 1 0.1 0.3 1 3 10 30 100 Collector to base voltage VCB (V) 100 Pulsed tw=1ms Duty cycle=1% IC/IB=1000 (–IB1=IB2) VCC=50V TC=25˚C 10 0.1 Collector current IC (A) ton, tstg, tf — IC 30 –25˚C 103 Collector current IC (A) 100 1 Cob — VCB VCE=5V 10 0.01 0.1 3 104 IC/IB=1000 1 10 hFE — IC 30 3 IC/IB=1000 30 Collector current IC (A) 105 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 10 100 Collector to emitter voltage VCE (V) 100 Switching time ton,tstg,tf (µs) 8 Collector output capacitance Cob (pF) Collector power dissipation PC (W) 160 TC=25˚C (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=3.5W) 180 Ambient temperature Ta (˚C) 2 VCE(sat) — IC 10 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 200 1000 Collector to emitter voltage VCE (V) Power Transistors 2SD2222 Rth(t) — t Thermal resistance Rth(t) (˚C/W) 104 (1) PT=10V × 0.3A (3W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 103 102 (1) 10 (2) 0 10–1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3