Power Transistors 2SD2266 Silicon NPN triple diffusion planar type For power switching Unit: mm 5.0±0.1 ■ Features ■ Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 80 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7 V Peak collector current ICP 8 A Collector current IC 4 A Base current IB 1 A Collector power TC=25°C 15 PC Ta=25°C dissipation Junction temperature Tj Storage temperature Tstg 90° 0.35±0.1 150 ˚C –55 to +150 ˚C 1.2±0.1 C1.0 2.25±0.2 0.65±0.1 1.05±0.1 0.55±0.1 0.55±0.1 C1.0 1 2 3 2.5±0.2 2.5±0.2 1:Base 2:Collector 3:Emitter MT4 Type Package W 2 ■ Electrical Characteristics 1.0 2.5±0.2 ● 13.0±0.2 4.2±0.2 ● High-speed switching Satisfactory linearity of foward current transfer ratio hFE Allowing supply with the radial taping 18.0±0.5 Solder Dip ● 10.0±0.2 (TC=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 80V, IE = 0 100 µA Emitter cutoff current IEBO VEB = 6V, IC = 0 100 µA Collector to emitter voltage VCEO IC = 25mA, IB = 0 60 hFE1* VCE = 4V, IC = 1A 70 20 Forward current transfer ratio hFE2 VCE = 4V, IC = 4A Base to emitter voltage VBE VCE = 4V, IC = 4A Collector to emitter saturation voltage VCE(sat) IC = 4A, IB = 0.4A Transition frequency fT VCE = 12V, IC = 0.2A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf *h FE1 IC = 4A, IB1 = 0.4A, IB2 = – 0.4A, VCC = 50V V 320 2.0 1.5 V V 80 MHz 0.3 µs 1.0 µs 0.2 µs Rank classification Rank Q P O hFE1 70 to 150 120 to 250 160 to 320 1 Power Transistors 2SD2266 PC — Ta IC — VCE 6 10 5 3 5 Collector current IC (A) (1) 30mA 25mA 20mA 2 15mA 10mA 1 5mA 0 20 40 60 80 100 120 140 160 4 3 2 0 0 1 2 3 4 5 6 7 8 VCE(sat) — IC TC=100˚C 0.3 –25˚C 0.03 0.1 0.3 1 3 103 TC=100˚C 102 10 1 0.01 0.03 10 –25˚C 25˚C Collector current IC (A) 0.1 0.3 1 3 VCE=12V f=10MHz TC=25˚C 100 10 1 0.1 0.01 0.03 10 Collector current IC (A) Cob — VCB ton, tstg, tf — IC 100 IE=0 f=1MHz TC=25˚C 1000 100 10 Switching time ton,tstg,tf (µs) 10000 1 3 10 Area of safe operation (ASO) Non repetitive pulse TC=25˚C 30 tstg 1 ton tf 0.1 0.3 100 Pulsed tw=1ms Duty cycle=1% IC/IB=10 (IB1=–IB2) VCC=50V TC=25˚C 10 0.1 Collector current IC (A) Collector current IC (A) 25˚C 4 fT — IC Transition frequency fT (MHz) 3 3 VCE=4V Forward current transfer ratio hFE 10 2 1000 IC/IB=10 30 0.1 1 Base to emitter voltage VBE (V) hFE — IC 104 1 0 Collector to emitter voltage VCE (V) 100 0.01 0.01 0.03 100˚C TC=–25˚C 1 (2) Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) 25˚C 35mA 15 0 Collector output capacitance Cob (pF) VCE=4V IB=40mA TC=25˚C (1) TC=Ta (2) Without heat sink (PC=2.0W) 0 ICP 10 t=1ms IC 3 DC 1 0.3 0.1 0.03 1 0.01 0.01 1 3 10 30 100 300 1000 Collector to base voltage VCB (V) 2 IC — VBE 4 Collector current IC (A) Collector power dissipation PC (W) 20 0 1 2 3 4 5 6 7 Collector current IC (A) 8 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Power Transistors 2SD2266 Rth(t) — t Thermal resistance Rth(t) (˚C/W) 1000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink 100 (1) (2) 10 1 0.1 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3