Power Transistors 2SD2139 Silicon NPN triple diffusion planar type For high-current amplification ratio, power amplification Unit: mm 5.0±0.1 ■ Features ■ Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 80 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 6 V Peak collector current ICP 6 A Collector current IC 3 A Base current IB 1 A Collector power TC=25°C dissipation Ta=25°C 15 PC Junction temperature Tj Storage temperature Tstg ■ Electrical Characteristics Parameter 90° 0.35±0.1 150 ˚C –55 to +150 ˚C 0.55±0.1 C1.0 1 2 3 2.5±0.2 2.5±0.2 1:Base 2:Collector 3:Emitter MT4 Type Package (TC=25˚C) Conditions min typ max Unit ICBO VCB = 80V, IE = 0 100 µA ICEO VCE = 40V, IB = 0 100 µA 100 µA IEBO VEB = 6V, IC = 0 Collector to emitter voltage VCEO IC = 25mA, IB = 0 60 Forward current transfer ratio hFE * VCE = 4V, IC = 0.5A 500 Collector to emitter saturation voltage VCE(sat) IC = 2A, IB = 0.05A Transition frequency fT VCE = 12V, IC = 0.2A, f = 10MHz FE C1.0 2.25±0.2 0.55±0.1 Emitter cutoff current *h 1.2±0.1 0.65±0.1 1.05±0.1 W 2 Symbol Collector cutoff current 1.0 2.5±0.2 ● 13.0±0.2 4.2±0.2 ● High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Allowing supply with the radial taping 18.0±0.5 Solder Dip ● 10.0±0.2 V 2500 1 50 V MHz Rank classification Rank hFE Q P O 500 to 1000 800 to 1500 1200 to 2500 1 Power Transistors 2SD2139 PC — Ta IC — VCE 1.2 IB=1.6mA 1.4mA (1) 10 5 0.8 0.8mA 0.6mA 0.6 0.4mA 0.4 0.2mA 4 3 TC=100˚C 2 25˚C 1 –25˚C 0 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 VCE(sat) — IC 0.4 VCE=4V Forward current transfer ratio hFE 3000 10 TC=100˚C TC=100˚C 1000 3 1 –25˚C 0.3 0.1 25˚C –25˚C 300 1.2 1.6 2.0 fT — IC IC/IB=40 30 0.8 Base to emitter voltage VBE (V) hFE — IC 10000 100 0.03 0 Collector to emitter voltage VCE (V) 1000 Transition frequency fT (MHz) 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) 5 (2) 0 100 30 VCE=12V f=10MHz TC=25˚C 300 100 30 10 3 25˚C 0.01 0.01 0.03 0.1 0.3 1 3 10 0.01 0.03 10 Collector current IC (A) 0.1 0.3 1 3 10 Collector current IC (A) Cob — VCB Area of safe operation (ASO) IE=0 f=1MHz TC=25˚C Collector current IC (A) 300 100 30 10 Non repetitive pulse TC=25˚C 30 10 ICP t=10ms 3 1ms IC DC 1 0.3 0.1 3 0.03 1 0.01 1 3 10 30 100 Collector to base voltage VCB (V) 1 3 10 30 100 300 1 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) 100 1000 Collector output capacitance Cob (pF) VCE=4V 1.0mA 0.2 0 2 TC=25˚C 1.2mA 1.0 15 IC — VBE 6 Collector current IC (A) (1) TC=Ta (2) Without heat sink (PC=2.0W) Collector current IC (A) Collector power dissipation PC (W) 20 1000 Collector to emitter voltage VCE (V) 10 Power Transistors 2SD2139 Rth(t) — t Thermal resistance Rth(t) (˚C/W) 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) Without heat sink (2) With a 50 × 50 × 2mm Al heat sink 1000 100 (1) (2) 10 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3