Power Transistors 2SB1361 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2052 Unit: mm ● ● ■ Absolute Maximum Ratings (TC=25˚C) Symbol Ratings Unit Collector to base voltage VCBO –150 V Collector to emitter voltage VCEO –150 V Emitter to base voltage VEBO –5 V Peak collector current ICP –15 A Collector current IC –9 A dissipation 100 PC Ta=25°C Junction temperature Tj Storage temperature Tstg 3 ■ Electrical Characteristics φ3.2±0.1 2.0±0.2 2.0±0.1 1.1±0.1 0.6±0.2 5.45±0.3 Parameter Collector power TC=25°C 21.0±0.5 15.0±0.2 ● Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics Wide area of safe operation (ASO) High transition frequency fT Full-pack package which can be installed to the heat sink with one screw 5.0±0.2 3.2 16.2±0.5 12.5 3.5 Solder Dip ● 15.0±0.3 11.0±0.2 0.7 ■ Features 10.9±0.5 1 2 3 1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(a) W 150 ˚C –55 to +150 ˚C (TC=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = –150V, IE = 0 –50 µA Emitter cutoff current IEBO VEB = –3V, IC = 0 –50 µA hFE1 VCE = –5V, IC = –20mA 20 hFE2* VCE = –5V, IC = –1A 60 20 Forward current transfer ratio 200 hFE3 VCE = –5V, IC = –7A Base to emitter voltage VBE VCE = –5V, IC = –7A Collector to emitter saturation voltage VCE(sat) IC = –7A, IB = – 0.7A Transition frequency fT VCE = –5V, IC = – 0.5A, f = 1MHz 15 MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 270 pF *h FE2 –1.8 –2.0 V V Rank classification Rank Q S P hFE2 60 to 120 80 to 160 100 to 200 1 Power Transistors 2SB1361 PC — Ta IC — VCE 100 80 60 (1) 40 –12 TC=25˚C –10 20 –10 –200mA –8 –150mA –100mA –80mA –6 –60mA –4 –40mA –20mA –2 (2) (3) 20 40 60 80 100 120 140 160 –2 –8 –10 –3 TC=100˚C 25˚C –25˚C – 0.1 – 0.03 –3 –10 –10 –12 –30 300 TC=100˚C 25˚C 100 –25˚C 30 10 3 1 – 0.1 – 0.3 –100 –1 –3 –10 –30 –100 Collector current IC (A) Cob — VCB Area of safe operation (ASO) –100 10000 IE=0 f=1MHz TC=25˚C Collector current IC (A) –30 1000 300 Non repetitive pulse TC=25˚C ICP t=10ms –10 –3 IC 100ms –1 DC – 0.3 100 – 0.1 30 – 0.03 –3 –10 –30 –100 Collector to base voltage VCB (V) – 0.01 –1 –3 –10 –30 –1 –2 –3 Base to emitter voltage VBE (V) fT — IC VCE=–5V Collector current IC (A) 3000 0 1000 Transition frequency fT (MHz) Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) –6 IC/IB=10 10 –1 –4 hFE — IC –30 – 0.3 Collector output capacitance Cob (pF) –4 1000 –1 –6 Collector to emitter voltage VCE (V) VCE(sat) — IC –100 – 0.01 – 0.1 – 0.3 100˚C 0 0 Ambient temperature Ta (˚C) –1 –8 –2 0 0 25˚C TC=–25˚C –10mA 0 2 VCE=–5V IB=–300mA Collector current IC (A) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=3W) IC — VBE –12 Collector current IC (A) Collector power dissipation PC (W) 120 –100 –300 –1000 Collector to emitter voltage VCE (V) VCE=–5V f=1MHz TC=25˚C 300 100 30 10 3 1 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 Collector current IC (A) –10 Power Transistors 2SB1361 Rth(t) — t Thermal resistance Rth(t) (˚C/W) 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.3A (3W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 1000 100 (1) (2) 10 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3