Transistor 2SB767 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD875 Unit: mm ■ Absolute Maximum Ratings * Ratings Unit Collector to base voltage VCBO –80 V Collector to emitter voltage VCEO –80 V Emitter to base voltage VEBO –5 V Peak collector current ICP –1 A Collector current IC – 0.5 A 1 W 150 ˚C –55 ~ +150 ˚C Junction temperature Tj Storage temperature Tstg 1cm2 Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion ■ Electrical Characteristics Parameter +0.25 4.0–0.20 0.4±0.04 3.0±0.15 Symbol PC 0.4max. 0.5±0.08 1.5±0.1 Parameter Collector power dissipation 0.4±0.08 (Ta=25˚C) * 45° +0.1 ● 1.0–0.2 ● 2.6±0.1 Large collector power dissipation PC. High collector to emitter voltage VCEO. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. ● 1.5±0.1 4.5±0.1 1.6±0.2 2.5±0.1 ■ Features 3 2 1 marking 1:Base 2:Collector 3:Emitter EIAJ:SC–62 Mini Power Type Package Marking symbol : C or more, and the board (Ta=25˚C) Symbol Conditions min typ max Unit – 0.1 µA Collector cutoff current ICBO VCB = –20V, IE = 0 Collector to base voltage VCBO IC = –10µA, IE = 0 –80 V Collector to emitter voltage VCEO IC = –100µA, IB = 0 –80 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –5 V Forward current transfer ratio hFE1 *1 VCE = –10V, IC = –150mA*2 90 330 hFE2 VCE = –5V, IC = –500mA*2 Collector to emitter saturation voltage VCE(sat) IC = –300mA, IB = –30mA*2 – 0.2 –0.4 V Base to emitter saturation voltage VBE(sat) IC = –300mA, IB = –30mA*2 – 0.85 –1.2 V Transition frequency fT VCB = –10V, IE = 50mA, f = 200MHz 120 Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 20 50 100 MHz 30 *2 *1h FE1 pF Pulse measurement Rank classification Rank Q R S hFE1 90 ~ 155 130 ~ 220 185 ~ 330 Marking Symbol CQ CR CS 1 2SB767 Transistor Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. 1.2 Ta=25˚C IB=–10mA –1.0 1.0 0.8 –6mA –5mA – 0.6 0.6 –4mA –3mA – 0.4 0.4 –2mA – 0.2 0.2 –1mA 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) –2 25˚C Ta=–25˚C 75˚C – 0.3 – 0.1 – 0.03 –10 –30 Ta=75˚C 200 25˚C 150 –25˚C 100 50 – 0.001 –1 –3 –10 –100 –300 –1000 –10 –30 –100 –300 –1000 Single pulse Ta=25˚C –3 Collector current IC (A) 35 –1 ICP IC t=10ms – 0.3 30 25 t=1s – 0.1 20 – 0.03 15 – 0.01 10 – 0.003 5 –30 –100 Collector to base voltage VCB (V) VCB=–10V Ta=25˚C 160 140 120 100 80 60 40 – 0.001 – 0.1 – 0.3 –1 –3 –10 –30 1 3 10 30 Emitter current IE (mA) Area of safe operation (ASO) IE=0 f=1MHz Ta=25˚C –100 –300 –1000 0 –3 Collector current IC (mA) 40 –30 Collector current IC (mA) 20 –10 –10 – 0.003 fT — I E 250 Cob — VCB –3 – 0.01 200 0 –1 50 0 –1 –25˚C – 0.03 180 Collector current IC (mA) 45 Ta=75˚C 25˚C VCE=–10V Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) –10 –3 –10 –1 – 0.1 300 IC/IB=10 –30 – 0.01 –1 –8 –3 hFE — IC –100 –1 –6 IC/IB=10 Collector to emitter voltage VCE (V) VBE(sat) — IC –3 –4 –10 – 0.3 Transition frequency fT (MHz) 0 Collector output capacitance Cob (pF) –9mA –8mA –7mA – 0.8 0 2 VCE(sat) — IC Collector current IC (A) Collector power dissipation PC (W) IC — VCE –1.2 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 1.4 –100 Collector to emitter voltage VCE (V) 100