Power Transistors 2SB1393, 2SB1393A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD1985 and 2SD1985A Unit: mm ■ Features Parameter (TC=25˚C) Symbol Collector to 2SB1393 base voltage 2SB1393A Collector to 2SB1393 Ratings V –80 –60 VCEO emitter voltage 2SB1393A 0.7±0.1 4.2±0.2 5.5±0.2 7.5±0.2 4.2±0.2 2.7±0.2 φ3.1±0.1 Unit –60 VCBO 16.7±0.3 ■ Absolute Maximum Ratings 10.0±0.2 V –80 4.0 ● 14.0±0.5 ● Satisfactory linearity of foward current transfer ratio hFE Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw 1.4±0.1 Solder Dip ● 0.8±0.1 1.3±0.2 0.5 +0.2 –0.1 2.54±0.25 Emitter to base voltage VEBO –5 V Peak collector current ICP –5 A Collector current IC –3 A Collector power TC=25°C dissipation 25 PC Ta=25°C Junction temperature Tj Storage temperature Tstg 150 ˚C –55 to +150 ˚C Symbol 2SB1393 current 2SB1393A Collector cutoff 2SB1393 current 2SB1393A ICEO ICES IEBO Emitter cutoff current Collector to emitter 2SB1393 voltage 2SB1393A Forward current transfer ratio Conditions typ max VCE = –30V, IB = 0 –300 –300 VCE = –60V, VBE = 0 –200 VCE = –80V, VBE = 0 –200 VEB = –5V, IC = 0 –1 –60 VCEO IC = –30mA, IB = 0 hFE1* VCE = –4V, IC = –1A 70 10 hFE2 VCE = –4V, IC = –3A VBE VCE = –4V, IC = –3A Collector to emitter saturation voltage VCE(sat) IC = –3A, IB = – 0.375A Transition frequency fT VCE = –5V, IC = – 0.1A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf FE1 min VCE = –60V, IB = 0 Base to emitter voltage *h 3 (TC=25˚C) Parameter Collector cutoff 2 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) W 2.0 ■ Electrical Characteristics 5.08±0.5 1 IC = –1A, IB1 = – 0.1A, IB2 = 0.1A, VCC = –50V Unit µA µA mA V –80 250 –1.8 –1.2 V V 20 MHz 0.5 µs 1.2 µs 0.3 µs Rank classification Rank Q P hFE1 70 to 150 120 to 250 1 Power Transistors 2SB1393, 2SB1393A PC — Ta IC — VBE VCE(sat) — IC –100 –6 Collector to emitter saturation voltage VCE(sat) (V) 40 30 –5 Collector current IC (A) Collector power dissipation PC (W) VCE=–4V (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=2.0W) 20 (1) 10 (2) TC=100˚C –4 –3 25˚C 0 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) – 0.4 Transition frequency fT (MHz) Forward current transfer ratio hFE 1000 25˚C 100 –25˚C 30 10 – 0.01 – 0.03 – 0.1 – 0.3 –1.6 –1 –3 VCE=–5V f=1MHz TC=25˚C 1000 100 30 10 3 –1 –3 Area of safe operation (ASO) Collector current IC (A) IC 10ms Non repetitive pulse TC=25˚C – 0.1 – 0.03 – 0.003 –3 –10 –30 2SB1393A 2SB1393 – 0.01 –100 –300 –1000 Collector to emitter voltage VCE 2 30 10 –1 –10 –3 –10 –30 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.2A (2W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink (V) 100 (1) (2) 10 1 0.1 10–4 10–3 10–2 10–1 –100 Collector to base voltage VCB (V) 1000 DC – 0.3 – 0.001 –1 100 Rth(t) — t Thermal resistance Rth(t) (˚C/W) t=1ms –1 300 10000 ICP –3 –10 IE=0 f=1MHz TC=25˚C 3000 Collector current IC (A) –10 –3 Cob — VCB 300 Collector current IC (A) –1 Collector current IC (A) 10000 1 – 0.01 – 0.03 – 0.1 – 0.3 –10 TC=100˚C – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –2.0 fT — IC 3000 TC=125˚C –1.2 1000 VCE=–4V 25˚C –25˚C Base to emitter voltage VBE (V) hFE — IC 10000 300 – 0.8 Collector output capacitance Cob (pF) 40 –1 – 0.03 (3) 20 –3 – 0.1 –25˚C 0 –10 – 0.3 –2 –1 0 IC/IB=10 –30 1 Time t (s) 10 102 103 104