BD239C NPN SILICON POWER TRANSISTOR ■ STMicroelectronics PREFERRED SALESTYPE DESCRIPTION The BD239C is a silicon epitaxial-base NPN transistor in Jedec TO-220 plastic package. It is inteded for use in medium power linear and switching applications. 1 2 3 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t V CER Collector-Emitter Voltage (R BE = 100Ω) 115 V V CEO Collector-Emitter Voltage (IB = 0) 100 V V EBO Emitter-Base Voltage (IC = 0) 5 V Collector Current 2 A Collector Peak Current 4 A IC I CM IB Base Current o P t ot Total Dissipation at Tc ≤ 25 C P t ot Total Dissipation at Tamb ≤ 25 C T stg Tj April 1999 o St orage Temperature Max. Operating Junction Temperature 0.6 A 30 W 2 W -65 to 150 o C 150 o C 1/4 BD239C THERMAL DATA R t hj-ca se R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 4.17 62.5 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol Max. Un it I CES Collector Cut-off Current (V BE = 0) Parameter V CE = 100 V 0.2 mA I CEO Collector Cut-off Current (I B = 0) V CE = 60 V 0.3 mA I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V 1 mA V CEO(sus )∗ Collector-Emitter Sustaining Voltage V CE(sat )∗ Test Cond ition s I C = 30 mA Typ . 100 V Collector-Emitter Saturation Voltage IC = 1 A IB = 0.2 A 0.7 V V BE ∗ Base-Emitt er Voltage IC = 1 A V CE = 4 V 1.3 V h F E∗ DC Current Gain I C = 0.2 A IC = 1 A V CE = 4 V V CE = 4 V Small Signal Current Gain I C = 0.2 A I C = 0.2 A V CE = 10 V V CE = 10 V h fe ∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % Safe Operating Areas 2/4 Min. 40 15 f = 1MHz f = 1KHz 3 20 BD239C TO-220 MECHANICAL DATA mm DIM. MIN. MAX. MIN. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 TYP. inch 1.27 TYP. MAX. 0.107 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 L2 16.4 0.409 0.645 L4 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 P011C 3/4 BD239C Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1999 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com . 4/4