STMICROELECTRONICS BD239C

BD239C

NPN SILICON POWER TRANSISTOR
■
STMicroelectronics PREFERRED
SALESTYPE
DESCRIPTION
The BD239C is a silicon epitaxial-base NPN
transistor in Jedec TO-220 plastic package.
It is inteded for use in medium power linear and
switching applications.
1
2
3
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Uni t
V CER
Collector-Emitter Voltage (R BE = 100Ω)
115
V
V CEO
Collector-Emitter Voltage (IB = 0)
100
V
V EBO
Emitter-Base Voltage (IC = 0)
5
V
Collector Current
2
A
Collector Peak Current
4
A
IC
I CM
IB
Base Current
o
P t ot
Total Dissipation at Tc ≤ 25 C
P t ot
Total Dissipation at Tamb ≤ 25 C
T stg
Tj
April 1999
o
St orage Temperature
Max. Operating Junction Temperature
0.6
A
30
W
2
W
-65 to 150
o
C
150
o
C
1/4
BD239C
THERMAL DATA
R t hj-ca se
R t hj- amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
o
4.17
62.5
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
Max.
Un it
I CES
Collector Cut-off
Current (V BE = 0)
Parameter
V CE = 100 V
0.2
mA
I CEO
Collector Cut-off
Current (I B = 0)
V CE = 60 V
0.3
mA
I EBO
Emitter Cut-off Current
(I C = 0)
V EB = 5 V
1
mA
V CEO(sus )∗ Collector-Emitter
Sustaining Voltage
V CE(sat )∗
Test Cond ition s
I C = 30 mA
Typ .
100
V
Collector-Emitter
Saturation Voltage
IC = 1 A
IB = 0.2 A
0.7
V
V BE ∗
Base-Emitt er Voltage
IC = 1 A
V CE = 4 V
1.3
V
h F E∗
DC Current Gain
I C = 0.2 A
IC = 1 A
V CE = 4 V
V CE = 4 V
Small Signal Current
Gain
I C = 0.2 A
I C = 0.2 A
V CE = 10 V
V CE = 10 V
h fe
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
Safe Operating Areas
2/4
Min.
40
15
f = 1MHz
f = 1KHz
3
20
BD239C
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
MAX.
MIN.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
D1
TYP.
inch
1.27
TYP.
MAX.
0.107
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
L2
16.4
0.409
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
P011C
3/4
BD239C
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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