BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD249 Series ● 125 W at 25°C Case Temperature ● 25 A Continuous Collector Current ● 40 A Peak Collector Current ● Customer-Specified Selections Available SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL Collector-emitter voltage (RBE = 100 Ω) E T E L O S B O Collector-emitter voltage (IC = -30 mA) BD250B VCER -115 -45 BD250B V CEO Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. V -90 BD250C BD250C Emitter-base voltage -70 BD250 BD250A UNIT -55 BD250 BD250A VALUE -60 V -80 -100 VEBO -5 V IC -25 A ICM -40 A IB -5 A Ptot 125 W Ptot 3 W ½LIC2 90 mJ °C Tj -65 to +150 Tstg -65 to +150 °C TL 250 °C This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 1 W/°C. Derate linearly to 150°C free air temperature at the rate of 24 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -0.4 A, RBE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = -20 V. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature PARAMETER V(BR)CEO ICES ICEO IEBO hFE V CE(sat) VBE hfe |hfe | Collector-emitter breakdown voltage TEST CONDITIONS IC = -30 mA MIN IB = 0 (see Note 5) BD250 -45 BD250A -60 BD250B -80 BD250C -100 TYP MAX V VCE = -55 V VBE = 0 BD250 -0.7 Collector-emitter VCE = -70 V VBE = 0 BD250A -0.7 cut-off current VCE = -90 V VBE = 0 BD250B -0.7 VCE = -115 V VBE = 0 BD250C -0.7 Collector cut-off VCE = -30 V IB = 0 BD250/250A -1 current VCE = -60 V IB = 0 BD250B/250C -1 VEB = -5 V IC = 0 Emitter cut-off current Forward current transfer ratio -1 VCE = -4 V IC = -1.5 A VCE = -4 V IC = -15 A VCE = -4 V IC = -25 A Collector-emitter IB = -1.5 A IC = -15 A saturation voltage IB = -5 A IC = -25 A Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio -4 V IC = -15 A -4 V IC = -25 A mA mA mA 25 (see Notes 5 and 6) 10 5 -1.8 (see Notes 5 and 6) -4 E T E L O S B O VCE = VCE = UNIT -2 (see Notes 5 and 6) VCE = -10 V IC = - 1A f = 1 kHz 25 VCE = -10 V IC = -1 A f = 1 MHz 3 -4 V V NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER MIN TYP 1 °C/W RθJA Junction to free air thermal resistance 42 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † TEST CONDITIONS † MIN ton Turn-on time IC = -5 A IB(on) = -0.5 A IB(off) = 0.5 A 0.2 µs toff Turn-off time VBE(off) = 5 V RL = 5 Ω tp = 20 µs, dc ≤ 2% 0.4 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT TCS636AD VCE(sat) - Collector-Emitter Saturation Voltage - V hFE - DC Current Gain 1000 COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT VCE = -4 V TC = 25°C tp = 300 µs, duty cycle < 2% 100 10 1 -0·1 -1·0 TCS636AB -10 -1·0 -0·1 E T E L O S B O -10 -100 IC = -300 mA IC = -1 A IC = -3 A -0·01 -0·001 -0·01 IC - Collector Current - A -1·0 -10 -25 A -20 A -15 A -10 A -100 IB - Base Current - A Figure 1. Figure 2. BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT -1·8 VBE - Base-Emitter Voltage - V -0·1 IC = IC = IC = IC = TCS636AC VCE = -4 V TC = 25°C -1·6 -1·4 -1·2 -1·0 -0·8 -0·6 -0·1 -1·0 -10 -100 IC - Collector Current - A Figure 3. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A -100 SAS636AB tp = 300 µs, d = 0.1 = 10% tp = 1 ms, d = 0.1 = 10% tp = 10 ms, d = 0.1 = 10% DC Operation -10 -1·0 -0·1 BD250 BD250A BD250B BD250C E T E L O S B O -0·01 -1·0 -10 -100 -1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS635AA Ptot - Maximum Power Dissipation - W 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 5. 4 JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.