Inchange Semiconductor Product Specification BD250/A/B/C Silicon PNP Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type BD249/A/B/C ・125 W at 25°C case temperature ・25 A continuous collector current PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS 体 半导 VALUE R O T UC BD246 固电 VCBO -55 BD246A Collector-base voltage D N O IC Collector emitter BD246B M E S GE BD246C VCEO VEBO N A H C IN Collector-emitter voltage BD246 BD246A -70 -115 -45 -60 V BD246B -80 BD246C -100 Open collector V -90 Open base Emitter-base voltage UNIT -5 V IC Collector current -25 A ICM Collector current-peak -40 A IB Base current -5 A PC Collector power dissipation 125 W Tj Junction temperature -65~150 ℃ Tstg Storage temperature -65~150 ℃ VALUE UNIT 1 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification BD250/A/B/C Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD250 V(BR)CEO Collector-emitter breakdown voltage MIN TYP. MAX UNIT -45 BD250A -60 IC=-30mA ;IB=0 V BD250B -80 BD250C -100 VCEsat-1 Collector-emitter saturation voltage IC=-15A ;IB=-1.5A -1.8 V VCEsat-2 Collector-emitter saturation voltage IC=-25A ;IB=-5A -4.0 V VBE-1 Base-emitter on voltage IC=-15A ; VCE=-4V -1.6 V VBE-2 Base-emitter on voltage IC=-25A ; VCE=-4V -3.0 V ICEO Collector cut-off current IEBO 体 半导 固电 BD250/250A VCE=-30V IB=0 BD250B/250C VCE=-60V IB=0 G N A CH hFE-1 DC current gain hFE-2 DC current gain hFE-3 DC current gain IN C U D ON IC M E ES Emitter cut-off current VEB=-5V; IC=0 IC=-1.5A ; VCE=-4V TOR -1.0 mA -1.0 mA 25 IC=-15A ; VCE=-4V 10 IC=-25A ; VCE=-4V 5 Switching times ton Turn-on time toff Turn-off time IC=-5A; IB1=-IB2=-0.5A RL=5Ω 2 0.2 μs 0.4 μs Inchange Semiconductor Product Specification BD250/A/B/C Silicon PNP Power Transistors PACKAGE OUTLINE 导体 半 电 固 R O T UC D N O IC M E S GE N A H INC Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3