BU426, BU426A NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK ● Rugged Triple-Diffused Planar Construction ● 900 Volt Blocking Capability AUGUST 1978 - REVISED MARCH 1997 SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-base voltage (IE = 0) Collector-emitter voltage (V BE = 0) Collector-emitter voltage (IB = 0) SYMBOL BU426 BU426A BU426 BU426A BU426 BU426A VCBO VCES VCEO VALUE 800 900 800 900 375 400 UNIT V V V IC 6 A ICM 10 A IB +2, -0.1 A Peak base current (see Note 1) IBM ±3 A Continuous device dissipation at (or below) 50°C case temperature Ptot 70 W Tj -65 to +150 °C Tstg -65 to +150 °C Continuous collector current Peak collector current (see Note 1) Continuous base current Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp ≤ 2 ms, duty cycle ≤ 2%. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 BU426, BU426A NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V CEO(sus) ICES IEBO hFE VCE(sat) V BE(sat) TEST CONDITIONS Collector-emitter sustaining voltage IC = 100 mA L = 25 mH MIN (see Note 2) BU426 375 BU426A 400 TYP MAX V VCE = 800 V VBE = 0 BU426 1 Collector-emitter V CE = 900 V VBE = 0 BU426A 1 cut-off current V CE = 800 V VBE = 0 TC = 125°C BU426 2 V CE = 900 V VBE = 0 TC = 125°C BU426A 2 VEB = 10 V IC = 0 VCE = 5V Emitter cut-off current Forward current transfer ratio Collector-emitter IB = 0.5 A saturation voltage IB = 1.25 A Base-emitter IB = 0.5 A saturation voltage IB = 1.25 A 10 IC = 0.6 A IC = 2.5 A IC = 4A IC = 2.5 A IC = 4A (see Notes 3 and 4) UNIT 30 mA mA 60 1.5 (see Notes 3 and 4) 3 1.4 (see Notes 3 and 4) 1.6 V V NOTES: 2. Inductive loop switching measurement. 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RθJC MIN TYP Junction to case thermal resistance MAX UNIT 1.1 °C/W resistive-load-switching characteristics at 25°C case temperature (unless otherwise noted) PARAMETER † ton Turn on time ts Storage time tf Fall time tf Fall time † IC = 2.5 A IB(on) = 0.5 A V CC = 250 V (see Figures 1 and 2) IC = 2.5 A IB(on) = 0.5 A V CC = 250 V TC = 95°C MIN IB(off) = -1 A INFORMATION TYP MAX UNIT 0.3 0.6 µs 2 3.5 0.15 IB(off) = -1 A Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. PRODUCT 2 TEST CONDITIONS 0.2 µs µs 0.75 µs BU426, BU426A NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 PARAMETER MEASUREMENT INFORMATION +25 V BD135 680 µ F 120 Ω T V1 100 Ω 100 µ F 47 Ω tp V cc = 250 V TUT 15 Ω V1 100 Ω 680 µ F 82 Ω BD136 tp = 20 µs Duty cycle = 1% V1 = 15 V, Source Impedance = 50 Ω Figure 1. Resistive-Load Switching Test Circuit C 90% 90% E IC A - B = td B - C = tr B E - F = tf 10% 10% F 0% D - E = ts A - C = ton D - F = toff 90% D dIB ≥ 2 A/µs dt IB I B(on) A 10% 0% I B(off) Figure 2. Resistive-Load Switching Waveforms PRODUCT INFORMATION 3 BU426, BU426A NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCP741AF 100 hFE - Typical DC Current Gain VCE = 1.5 V VCE = 5 V 10 1·0 0·1 TCP741AG 7 TC = 25°C 6 IC = 4 A IC = 3 A IC = 2 A IC = 1 A 5 4 3 2 1 0 1·0 10 0 0·5 IC - Collector Current - A 2·0 Figure 4. COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT BASE-EMITTER SATURATION VOLTAGE vs BASE CURRENT TCP741AH 7 TC = 100°C 6 IC = 4 A IC = 3 A IC = 2 A IC = 1 A 5 4 3 2 1 0 TCP741AI 1·2 VBE(sat) - Base-Emitter Saturation Voltage - V VCE(sat) - Collector-Emitter Saturation Voltage - V 1·5 IB - Base Current - A Figure 3. TC = 25°C 1·1 1·0 0·9 0·8 IC = 4 A IC = 3 A IC = 2 A IC = 1 A 0·7 0·6 0 0·5 1·0 1·5 2·0 IB - Base Current - A Figure 5. PRODUCT 4 1·0 INFORMATION 0 0·2 0·4 0·6 0·8 1·0 IB - Base Current - A Figure 6. 1·2 1·4 1·6 BU426, BU426A NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 100 SAP741AA 10 1·0 0.1 tp = 0.2 µs tp = 0.5 µs tp = 1 µs tp = 2 µs tp = 6 µs tp = 20 µs DC Operation 0·01 1·0 BU426 BU426A 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 7. PRODUCT INFORMATION 5 BU426, BU426A NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 MECHANICAL DATA SOT-93 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SOT-93 4,90 4,70 ø 15,2 14,7 4,1 4,0 3,95 4,15 1,37 1,17 16,2 MAX. 12,2 MAX. 31,0 TYP. 18,0 TYP. 1 2 3 1,30 0,78 0,50 1,10 11,1 10,8 2,50 TYP. ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab. PRODUCT 6 INFORMATION MDXXAW BU426, BU426A NPN SILICON POWER TRANSISTORS AUGUST 1978 - REVISED MARCH 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright © 1997, Power Innovations Limited PRODUCT INFORMATION 7