BUL791 NPN SILICON POWER TRANSISTOR ● Designed Specifically for High Frequency Electronic Ballasts up to 125 W ● hFE 6 to 22 at VCE = 1 V, IC = 2 A ● Low Power Losses (On-state and Switching) ● Key Parameters Characterised at High Temperature ● Tight and Reproducible Parametric Distributions TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C ambient temperature (unless otherwise noted ) RATING SYMBOL VALUE UNIT Collector-emitter voltage (VBE = 0) VCES 700 V Collector-base voltage (IE = 0) VCBO 700 V VCEO 400 V VEBO 9 V Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current E T E L O S B O IC 4 A Peak collector current (see Note 1) ICM 8 A Peak collector current (see Note 2) ICM 14 A IB 2.5 A Continuous base current Peak base current (see Note 2) Continuous device dissipation at (or below) 25°C case temperature Operating junction temperature range Storage temperature range IBM 3.5 A Ptot 75 W Tj -65 to +150 °C Tstg -65 to +150 °C NOTES: 1. This value applies for tp = 10 ms, duty cycle ≤ 2%. 2. This value applies for tp = 300 µs, duty cycle ≤ 2%. JULY 1991 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BUL791 NPN SILICON POWER TRANSISTOR electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER VCEO(sus) ICES IEBO VBE(sat) VCE(sat) hFE VFCB Collector-emitter sustaining voltage TEST CONDITIONS IC = 100 mA L = 25 mH Collector-emitter VCE = 700 V V BE = 0 cut-off current V CE = 700 V V BE = 0 VEB = IC = 0 Emitter cut-off current 9V MIN (see Note 3) TYP MAX 400 V 10 TC = 90°C 200 1 Base-emitter IB = 400 mA IC = 2A (see Notes 4 and 5) 0.94 saturation voltage IB = 400 mA IC = 2A TC = 90°C 0.86 Collector-emitter IB = 400 mA IC = 2A (see Notes 4 and 5) 0.25 saturation voltage IB = 400 mA IC = 2A TC = 90°C 0.3 VCE = 1V IC = 10 mA 10 VCE = 1V IC = 2A 6 12 22 VCE = 5V IC = 8A 2 6.5 14 Forward current transfer ratio Collector-base forward bias diode voltage ICB = 60 mA UNIT 1 0.4 µA mA V V 16.5 850 mV NOTES: 3. Inductive loop switching measurement. 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts, and located within 3.2 mm from the device body. thermal characteristics E T E L O S B O MAX UNIT R θJA Junction to free air thermal resistance PARAMETER MIN TYP 62.5 °C/W R θJC Junction to case thermal resistance 1.66 °C/W MAX UNIT 2.2 3 µs 95 180 ns 210 300 ns 4 6 µs 120 230 ns inductive-load switching characteristics at 25°C case temperature PARAMETER tsv Storage time tfi Current fall time txo Cross over time tsv Storage time tfi Current fall time TEST CONDITIONS MIN IC = 2 A IB(on) = 400 mA VCC = 40 V L = 1 mH IB(off) = 800 mA VCLAMP = 300 V IC = 2 A IB(on) = 400 mA VCC = 40 V L = 1 mH IB(off) = 250 mA VCLAMP = 300 V TYP resistive-load switching characteristics at 25°C case temperature TYP MAX UNIT tsv PARAMETER Storage time IC = 2 A IB(on) = 400 mA TEST CONDITIONS MIN 2.2 3 µs tfi Current fall time VCC = 300 V IB(off) = 400 mA 160 250 ns 2 JULY 1991 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BUL791 NPN SILICON POWER TRANSISTOR TYPICAL CHARACTERISTICS FORWARD CURRENT TRANSFER RATIO vs COLLECTOR CURRENT L791CHF VCE(sat) - Collector-Emitter Saturation Voltage - V 30 TC = 25°C hFE - Forward Current Transfer Ratio COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT 10 VCE = 1 V V CE = 5 V 1·0 0·01 0·1 L791CVB 10 IB = I C / 5 TC = 25°C TC = 90°C 1·0 0·1 E T E L O S B O 1·0 10 0·01 0·1 20 1·0 IC - Collector Current - A IC - Collector Current - A Figure 1. Figure 2. INDUCTIVE SWITCHING TIMES vs COLLECTOR CURRENT IB(on) = IC / 5 IB(off) = IC / 2.5 = 40 V VCC VCLAMP = 300 V L = 1 mH TC = 25°C tsv txo tfi 10 Inductive Switching Time - µs Inductive Switching Time - µs 1·0 INDUCTIVE SWITCHING TIMES vs CASE TEMPERATURE L791CI1 10 10 0·1 L791CI3 IB(on) = 400 mA, VCC = 40 V, L = 1 mH IB(off) = 800 mA, VCLAMP = 300 V, IC = 2 A 1·0 0·1 t sv t fi 0·01 0·1 0·01 1·0 IC - Collector Current - A Figure 3. 10 0 20 40 60 80 100 TC - Case Temperature - °C Figure 4. JULY 1991 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BUL791 NPN SILICON POWER TRANSISTOR TYPICAL CHARACTERISTICS INDUCTIVE SWITCHING TIMES vs COLLECTOR CURRENT L791CI2 10 L791CI4 10 IB(on) = 400 mA, VCC = 40 V, L = 1 mH IB(off) = 250 mA, VCLAMP = 300 V, IC = 2 A tsv tfi IB(on) = IC / 5 IB(off) = IC / 8 = 40 V VCC VCLAMP = 300 V L = 1 mH = 25°C TC Inductive Switching Time - µs Inductive Switching Time - µs INDUCTIVE SWITCHING TIMES vs CASE TEMPERATURE 1·0 1·0 E T E L O S B O t sv t fi 0·1 0·1 0·1 1·0 10 0 20 IC - Collector Current - A L791CR1 IB(on) = 400 mA, VCC = 300 V IB(off) = 400 mA, IC = 2 A = IC / 5, VCC = 300 V = IC / 5, TC = 25°C Resistive Switching Time - µs Resistive Switching Time - µs L791CR2 10 1·0 tsv tfi t sv t fi 0·1 1·0 IC - Collector Current - A Figure 7. 10 0 20 40 60 80 100 TC - Case Temperature - °C Figure 8. 4 100 RESISTIVE SWITCHING TIMES vs CASE TEMPERATURE 1·0 0·1 0·1 80 Figure 6. RESISTIVE SWITCHING TIMES vs COLLECTOR CURRENT IB(on) IB(off) 60 TC - Case Temperature - °C Figure 5. 10 40 JULY 1991 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BUL791 NPN SILICON POWER TRANSISTOR MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 10 MAXIMUM REVERSE-BIAS SAFE OPERATING AREA L791CFB L791CRB 10 IB(on) = IC / 5 VBE(off) = -5 V = 25°C TC IC - Collector Current - A IC - Collector Current - A 8 1·0 0·1 TC = 25°C tp = 10 µs tp = 100 µs tp = 1 ms tp = 10 ms DC Operation 0·01 1·0 6 4 2 E T E L O S B O 0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 9. 0 100 200 300 400 500 600 700 800 VCE - Collector-Emitter Voltage - V Figure 10. JULY 1991 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 5