BUL791 NPN SILICON POWER TRANSISTOR Copyright © 1997, Power Innovations Limited, UK ● Designed Specifically for High Frequency Electronic Ballasts up to 125 W ● hFE 6 to 22 at VCE = 1 V, IC = 2 A ● Low Power Losses (On-state and Switching) ● Key Parameters Characterised at High Temperature ● Tight and Reproducible Parametric Distributions JULY 1991 - REVISED SEPTEMBER 1997 TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C ambient temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT Collector-emitter voltage (V BE = 0) VCES 700 V Collector-base voltage (IE = 0) VCBO 700 V Collector-emitter voltage (IB = 0) VCEO 400 V Emitter-base voltage V EBO 9 V IC 4 A Peak collector current (see Note 1) ICM 8 A Peak collector current (see Note 2) ICM 14 A IB 2.5 A Peak base current (see Note 2) IBM 3.5 A Continuous device dissipation at (or below) 25°C case temperature Ptot 75 W Tj -65 to +150 °C Tstg -65 to +150 °C Continuous collector current Continuous base current Operating junction temperature range Storage temperature range NOTES: 1. This value applies for tp = 10 ms, duty cycle ≤ 2%. 2. This value applies for tp = 300 µs, duty cycle ≤ 2%. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 BUL791 NPN SILICON POWER TRANSISTOR JULY 1991 - REVISED SEPTEMBER 1997 electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER VCEO(sus) ICES IEBO VBE(sat) VCE(sat) hFE V FCB TEST CONDITIONS Collector-emitter sustaining voltage IC = 100 mA L = 25 mH Collector-emitter VCE = 700 V VBE = 0 cut-off current VCE = 700 V VBE = 0 VEB = IC = 0 Emitter cut-off current 9V MIN (see Note 3) TYP 400 10 TC = 90°C 200 1 IB = 400 mA IC = 2A (see Notes 4 and 5) 0.94 saturation voltage IB = 400 mA IC = 2A TC = 90°C 0.86 Collector-emitter IB = 400 mA IC = 2A (see Notes 4 and 5) 0.25 saturation voltage IB = 400 mA IC = 2A TC = 90°C 0.3 transfer ratio Collector-base forward bias diode voltage 1 0.4 VCE = 1V IC = 10 mA 10 VCE = 1V IC = 2A 6 12 22 VCE = 5V IC = 8A 2 6.5 14 ICB = 60 mA UNIT V Base-emitter Forward current MAX µA mA V V 16.5 850 mV NOTES: 3. Inductive loop switching measurement. 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts, and located within 3.2 mm from the device body. thermal characteristics PARAMETER MIN TYP MAX UNIT RθJA Junction to free air thermal resistance 62.5 °C/W RθJC Junction to case thermal resistance 1.66 °C/W TYP MAX UNIT 2.2 3 µs 95 180 ns 210 300 ns inductive-load switching characteristics at 25°C case temperature PARAMETER TEST CONDITIONS MIN tsv Storage time tfi Current fall time txo Cross over time tsv Storage time IC = 2 A IB(on) = 400 mA VCC = 40 V tfi Current fall time L = 1 mH IB(off) = 250 mA V CLAMP = 300 V IC = 2 A IB(on) = 400 mA VCC = 40 V L = 1 mH IB(off) = 800 mA V CLAMP = 300 V 4 6 µs 120 230 ns TYP MAX UNIT resistive-load switching characteristics at 25°C case temperature PARAMETER MIN tsv Storage time IC = 2 A IB(on) = 400 mA 2.2 3 µs tfi Current fall time V CC = 300 V IB(off) = 400 mA 160 250 ns PRODUCT 2 TEST CONDITIONS INFORMATION BUL791 NPN SILICON POWER TRANSISTOR JULY 1991 - REVISED SEPTEMBER 1997 TYPICAL CHARACTERISTICS FORWARD CURRENT TRANSFER RATIO vs COLLECTOR CURRENT L791CHF VCE(sat) - Collector-Emitter Saturation Voltage - V 30 TC = 25°C hFE - Forward Current Transfer Ratio COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT 10 VCE = 1 V VCE = 5 V 1·0 0·01 0·1 1·0 10 L791CVB 10 IB = IC / 5 TC = 25°C TC = 90°C 1·0 0·1 0·01 0·1 20 1·0 IC - Collector Current - A Figure 1. Figure 2. INDUCTIVE SWITCHING TIMES vs COLLECTOR CURRENT t sv t xo t fi IB(on) = IC / 5 IB(off) = I C / 2.5 VCC = 40 V VCLAMP = 300 V L = 1 mH TC = 25°C 0·1 L791CI3 10 Inductive Switching Time - µs Inductive Switching Time - µs 1·0 INDUCTIVE SWITCHING TIMES vs CASE TEMPERATURE L791CI1 10 10 IC - Collector Current - A IB(on) = 400 mA, VCC = 40 V, L = 1 mH IB(off) = 800 mA, VCLAMP = 300 V, IC = 2 A 1·0 0·1 tsv tfi 0·01 0·1 0·01 1·0 IC - Collector Current - A Figure 3. PRODUCT 10 0 20 40 60 80 100 TC - Case Temperature - °C Figure 4. INFORMATION 3 BUL791 NPN SILICON POWER TRANSISTOR JULY 1991 - REVISED SEPTEMBER 1997 TYPICAL CHARACTERISTICS INDUCTIVE SWITCHING TIMES vs COLLECTOR CURRENT L791CI2 10 L791CI4 10 IB(on) = 400 mA, VCC = 40 V, L = 1 mH IB(off) = 250 mA, VCLAMP = 300 V, IC = 2 A tsv tfi IB(on) = IC / 5 IB(off) = I C / 8 VCC = 40 V VCLAMP = 300 V L = 1 mH TC = 25°C Inductive Switching Time - µs Inductive Switching Time - µs INDUCTIVE SWITCHING TIMES vs CASE TEMPERATURE 1·0 1·0 tsv tfi 0·1 0·1 0·1 1·0 10 0 20 IC - Collector Current - A IB(on) = 400 mA, VCC = 300 V IB(off) = 400 mA, I C = 2 A Resistive Switching Time - µs Resistive Switching Time - µs L791CR2 10 = IC / 5, VCC = 300 V = IC / 5, T C = 25°C 1·0 1·0 tsv tfi tsv tfi 0·1 1·0 IC - Collector Current - A Figure 7. PRODUCT 4 100 RESISTIVE SWITCHING TIMES vs CASE TEMPERATURE L791CR1 0·1 0·1 80 Figure 6. RESISTIVE SWITCHING TIMES vs COLLECTOR CURRENT IB(on) IB(off) 60 TC - Case Temperature - °C Figure 5. 10 40 INFORMATION 10 0 20 40 60 TC - Case Temperature - °C Figure 8. 80 100 BUL791 NPN SILICON POWER TRANSISTOR JULY 1991 - REVISED SEPTEMBER 1997 MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 10 MAXIMUM REVERSE-BIAS SAFE OPERATING AREA L791CFB L791CRB 10 IB(on) = IC / 5 VBE(off) = -5 V TC = 25°C IC - Collector Current - A IC - Collector Current - A 8 1·0 0·1 TC = 25°C tp = 10 µs tp = 100 µs tp = 1 ms tp = 10 ms DC Operation 0·01 1·0 6 4 2 0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 9. PRODUCT 0 100 200 300 400 500 600 700 800 VCE - Collector-Emitter Voltage - V Figure 10. INFORMATION 5 BUL791 NPN SILICON POWER TRANSISTOR JULY 1991 - REVISED SEPTEMBER 1997 MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 ø 10,4 10,0 3,96 3,71 1,32 1,23 2,95 2,54 see Note B 6,6 6,0 15,90 14,55 see Note C 6,1 3,5 1,70 1,07 0,97 0,61 1 2 14,1 12,7 3 2,74 2,34 5,28 4,88 VERSION 1 0,64 0,41 2,90 2,40 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. PRODUCT 6 INFORMATION MDXXBE BUL791 NPN SILICON POWER TRANSISTOR JULY 1991 - REVISED SEPTEMBER 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright © 1997, Power Innovations Limited PRODUCT INFORMATION 7