BUT11 NPN SILICON POWER TRANSISTOR Copyright © 1997, Power Innovations Limited, UK ● Rugged Triple-Diffused Planar Construction ● 100 W at 25°C Case Temperature ● 5 A Continuous Collector Current MAY 1989 - REVISED MARCH 1997 TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) SYMBOL VALUE UNIT Collector-base voltage (IE = 0) RATING VCBO 850 V Collector-emitter voltage (V BE = 0) VCES 850 V Collector-emitter voltage (IB = 0) VCEO 400 V Emitter-base voltage V EBO 10 V A IC 5 Peak collector current (see Note 1) ICM 10 A Continuous device dissipation at (or below) 25°C case temperature Ptot 100 W Tj -65 to +150 °C Tstg -65 to +150 °C Continuous collector current Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 BUT11 NPN SILICON POWER TRANSISTOR MAY 1989 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V CEO(sus) ICES IEBO hFE VCE(sat) V BE(sat) ft Cob TEST CONDITIONS Collector-emitter sustaining voltage IC = 0.1 A L = 25 mH Collector-emitter VCE = 850 V VBE = 0 cut-off current V CE = 850 V VBE = 0 VEB = 10 V IC = 0 VCE = 5V Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Current gain bandwidth product Output capacitance MIN (see Note 2) TYP MAX 400 V 50 TC = 125°C 500 1 IC = 0.5 A (see Notes 3 and 4) UNIT 20 µA mA 60 IB = 0.6 A IC = 3A (see Notes 3 and 4) 1.5 V IB = 0.6 A IC = 3A (see Notes 3 and 4) 1.3 V VCE = 10 V IC = 0.5 A f= 1 MHz VCB = 20 V IE = 0 f = 0.1 MHz 12 MHz 110 pF NOTES: 2. Inductive loop switching measurement. 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RθJC MIN TYP Junction to case thermal resistance MAX UNIT 1.25 °C/W inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted) PARAMETER † † tsv Voltage storage time IC = 3 A IB(on) = 0.6A tfi Current fall time V CC = 50 V (see Figures 1 and 2) tsv Voltage storage time IC = 3 A IB(on) = 0.6A tfi Current fall time V CC = 50 V TC = 100°C MIN VBE(off) = -5 V VBE(off) = -5 V Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. PRODUCT 2 TEST CONDITIONS INFORMATION TYP MAX UNIT 1.4 µs 150 ns 1.5 µs 300 ns BUT11 NPN SILICON POWER TRANSISTOR MAY 1989 - REVISED MARCH 1997 PARAMETER MEASUREMENT INFORMATION 33 Ω +5V D45H11 BY205-400 33 Ω BY205-400 RB (on) 1 pF V Gen 180 µ H 2N2222 1 kΩ 68 Ω 0.02 µ F vcc BY205-400 Vclamp = 400 V TUT 1 kΩ +5V 270 Ω BY205-400 5X BY205-400 1 kΩ 2N2904 Adjust pw to obtain IC D44H11 47 Ω For IC < 6 A VCC = 50 V For IC ≥ 6 A VCC = 100 V V 100 Ω BE(off) Figure 1. Inductive-Load Switching Test Circuit I B(on) A (90%) IB A - B = tsv Base Current B - C = trv D - E = tfi E - F = tti C B - E = txo V CE B 90% 10% Collector Voltage D (90%) E (10%) I C(on) Collector Current F (2%) NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: tr < 15 ns, Rin > 10 Ω, Cin < 11.5 pF. B. Resistors must be noninductive types. Figure 2. Inductive-Load Switching Waveforms PRODUCT INFORMATION 3 BUT11 NPN SILICON POWER TRANSISTOR MAY 1989 - REVISED MARCH 1997 MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 100 10 1·0 0.1 0·01 1·0 tp = 10 µs tp = 100 µs tp = 1 ms tp = 10 ms DC Operation 10 100 VCE - Collector-Emitter Voltage - V Figure 3. PRODUCT 4 SAP791AB INFORMATION 1000 BUT11 NPN SILICON POWER TRANSISTOR MAY 1989 - REVISED MARCH 1997 MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 ø 10,4 10,0 3,96 3,71 1,32 1,23 2,95 2,54 see Note B 6,6 6,0 15,90 14,55 see Note C 6,1 3,5 1,70 1,07 0,97 0,61 1 2 14,1 12,7 3 2,74 2,34 5,28 4,88 VERSION 1 0,64 0,41 2,90 2,40 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. PRODUCT MDXXBE INFORMATION 5 BUT11 NPN SILICON POWER TRANSISTOR MAY 1989 - REVISED MARCH 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright © 1997, Power Innovations Limited PRODUCT 6 INFORMATION