BUL770 NPN SILICON POWER TRANSISTOR Copyright © 1997, Power Innovations Limited, UK ● Designed Specifically for High Frequency Electronic Ballasts up to 50 W ● hFE 7 to 21 at VCE = 1 V, IC = 800 mA ● Low Power Losses (On-state and Switching) ● Key Parameters Characterised at High Temperature ● JULY 1991 - REVISED SEPTEMBER 1997 Tight and Reproducible Parametric Distributions TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C ambient temperature (unless otherwise noted) SYMBOL VALUE UNIT Collector-emitter voltage (V BE = 0) RATING VCES 700 V Collector-base voltage (IE = 0) VCBO 700 V Collector-emitter voltage (IB = 0) VCEO 400 V Emitter-base voltage V EBO 9 V IC 2.5 A Peak collector current (see Note 1) ICM 6 A Peak collector current (see Note 2) ICM 8 A IB 1.5 A Peak base current (see Note 2) IBM 2.5 A Continuous device dissipation at (or below) 25°C case temperature Ptot 50 W Tj -65 to +150 °C Tstg -65 to +150 °C Continuous collector current Continuous base current Operating junction temperature range Storage temperature range NOTES: 1. This value applies for tp = 10 ms, duty cycle ≤ 2%. 2. This value applies for tp = 300 µs, duty cycle ≤ 2%. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 BUL770 NPN SILICON POWER TRANSISTOR JULY 1991 - REVISED SEPTEMBER 1997 electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER VCEO(sus) ICES IEBO VBE(sat) VCE(sat) hFE V FCB TEST CONDITIONS Collector-emitter sustaining voltage IC = 100 mA L = 25 mH Collector-emitter VCE = 700 V VBE = 0 cut-off current VCE = 700 V VBE = 0 VEB = IC = 0 Emitter cut-off current 9V MIN (see Note 3) TYP 400 10 TC = 90°C 200 1 IB = 160 mA IC = 800 mA (see Notes 4 and 5) 0.83 saturation voltage IB = 160 mA IC = 800 mA TC = 90°C 0.75 Collector-emitter IB = 160 mA IC = 800 mA (see Notes 4 and 5) 0.18 saturation voltage IB = 160 mA IC = 800 mA TC = 90°C 0.22 transfer ratio Collector-base forward bias diode voltage 0.9 0.25 VCE = 1V IC = 10 mA 10 18.5 VCE = 1V IC = 800 mA 7 14.5 21 VCE = 5V IC = 3.2 A 2 7.5 14 ICB = 60 mA UNIT V Base-emitter Forward current MAX 870 µA mA V V mV NOTES: 3. Inductive loop switching measurement. 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts, and located within 3.2 mm from the device body. thermal characteristics MAX UNIT RθJA Junction to free air thermal resistance PARAMETER MIN TYP 62.5 °C/W RθJC Junction to case thermal resistance 2.5 °C/W MAX UNIT inductive-load switching characteristics at 25°C case temperature PARAMETER TEST CONDITIONS tsv Storage time tfi Current fall time txo Cross over time tsv tfi MIN TYP 2.5 3 µs 150 190 ns 300 400 ns VCC = 40 V 4.3 5 µs V CLAMP = 300 V 140 200 ns IC = 800 mA IB(on) = 160 mA VCC = 40 V L = 1 mH IB(off) = 320 mA V CLAMP = 300 V Storage time IC = 800 mA IB(on) = 160 mA Current fall time L = 1 mH IB(off) = 100 mA resistive-load switching characteristics at 25°C case temperature TYP MAX UNIT tsv PARAMETER Storage time IC = 800 mA IB(on) = 160 mA 2.5 3.4 µs tfi Current fall time V CC = 300 V IB(off) = 160 mA 150 250 ns PRODUCT 2 TEST CONDITIONS INFORMATION MIN BUL770 NPN SILICON POWER TRANSISTOR JULY 1991 - REVISED SEPTEMBER 1997 TYPICAL CHARACTERISTICS FORWARD CURRENT TRANSFER RATIO vs COLLECTOR CURRENT L770CHF VCE(sat) - Collector-Emitter Saturation Voltage - V 30 TC = 25°C hFE - Forward Current Transfer Ratio COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT 10 VCE = 1 V VCE = 5 V 1·0 0·01 0·1 1·0 L770CVB 10 IB = IC / 5 TC = 25°C TC = 90°C 1·0 0·1 0·01 0·1 10 1·0 IC - Collector Current - A Figure 1. Figure 2. INDUCTIVE SWITCHING TIMES vs COLLECTOR CURRENT t sv t xo t fi IB(on) = IC / 5 IB(off) = I C / 2.5 VCC = 40 V VCLAMP = 300 V L = 1 mH TC = 25°C 0·1 L770CI3 10 Inductive Switching Time - µs Inductive Switching Time - µs 1·0 INDUCTIVE SWITCHING TIMES vs CASE TEMPERATURE L770CI1 10 10 IC - Collector Current - A IB(on) = 160 mA, VCC = 40 V, L = 1 mH IB(off) = 320 mA, VCLAMP = 300 V, IC = 800 mA 1·0 tsv tfi 0·01 0·1 0·1 1·0 IC - Collector Current - A Figure 3. PRODUCT 10 0 20 40 60 80 100 TC - Case Temperature - °C Figure 4. INFORMATION 3 BUL770 NPN SILICON POWER TRANSISTOR JULY 1991 - REVISED SEPTEMBER 1997 TYPICAL CHARACTERISTICS INDUCTIVE SWITCHING TIMES vs COLLECTOR CURRENT L770CI2 10 L770CI4 10 IB(on) = 160 mA, VCC = 40 V, L = 1 mH IB(off) = 100 mA, V CLAMP = 300 V, IC = 800 mA tsv tfi IB(on) = IC / 5 IB(off) = I C / 8 VCC = 40 V VCLAMP = 300 V L = 1 mH TC = 25°C Inductive Switching Time - µs Inductive Switching Time - µs INDUCTIVE SWITCHING TIMES vs CASE TEMPERATURE 1·0 1·0 tsv tfi 0·1 0·1 0·1 1·0 10 0 20 IC - Collector Current - A IB(on) = 160 mA, VCC = 300 V IB(off) = 160 mA, I C = 800 mA Resistive Switching Time - µs Resistive Switching Time - µs L770CR2 10 = IC / 5, VCC = 300 V = IC / 5, T C = 25°C 1·0 1·0 tsv tfi tsv tfi 0·1 1·0 IC - Collector Current - A Figure 7. PRODUCT 4 100 RESISTIVE SWITCHING TIMES vs CASE TEMPERATURE L770CR1 0·1 0·1 80 Figure 6. RESISTIVE SWITCHING TIMES vs COLLECTOR CURRENT IB(on) IB(off) 60 TC - Case Temperature - °C Figure 5. 10 40 INFORMATION 10 0 20 40 60 TC - Case Temperature - °C Figure 8. 80 100 BUL770 NPN SILICON POWER TRANSISTOR JULY 1991 - REVISED SEPTEMBER 1997 MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA 10 MAXIMUM REVERSE-BIAS SAFE OPERATING AREA L770CFB L770CRB 8 IC - Collector Current - A IC - Collector Current - A IB(on) = IC / 5 VBE(off) = -5 V TC = 25°C 1·0 0·1 TC = 25°C tp = 10 µs tp = 1 ms tp = 10 ms DC Operation 0·01 1·0 6 4 2 0 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 9. PRODUCT 0 100 200 300 400 500 600 700 800 VCE - Collector-Emitter Voltage - V Figure 10. INFORMATION 5 BUL770 NPN SILICON POWER TRANSISTOR JULY 1991 - REVISED SEPTEMBER 1997 MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 ø 10,4 10,0 3,96 3,71 1,32 1,23 2,95 2,54 see Note B 6,6 6,0 15,90 14,55 see Note C 6,1 3,5 1,70 1,07 0,97 0,61 1 2 14,1 12,7 3 2,74 2,34 5,28 4,88 VERSION 1 0,64 0,41 2,90 2,40 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. PRODUCT 6 INFORMATION MDXXBE BUL770 NPN SILICON POWER TRANSISTOR JULY 1991 - REVISED SEPTEMBER 1997 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright © 1997, Power Innovations Limited PRODUCT INFORMATION 7