BUT11 NPN SILICON POWER TRANSISTOR ● Rugged Triple-Diffused Planar Construction ● 100 W at 25°C Case Temperature ● 5 A Continuous Collector Current TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT Collector-base voltage (IE = 0) VCBO 850 V Collector-emitter voltage (VBE = 0) VCES 850 V Collector-emitter voltage (IB = 0) V CEO 400 V Emitter-base voltage VEBO 10 V IC 5 A Peak collector current (see Note 1) ICM 10 A Continuous device dissipation at (or below) 25°C case temperature Ptot 100 W Tj -65 to +150 °C Tstg -65 to +150 °C Continuous collector current Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%. MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BUT11 NPN SILICON POWER TRANSISTOR electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER VCEO(sus) ICES IEBO hFE VCE(sat) VBE(sat) ft Cob Collector-emitter sustaining voltage TEST CONDITIONS IC = 0.1 A L = 25 mH Collector-emitter VCE = 850 V VBE = 0 cut-off current VCE = 850 V VBE = 0 VEB = 10 V IC = 0 VCE = 5V Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Current gain bandwidth product Output capacitance MIN (see Note 2) TYP MAX 400 V 50 TC = 125°C 500 1 IC = 0.5 A (see Notes 3 and 4) UNIT 20 µA mA 60 IB = 0.6 A IC = 3A (see Notes 3 and 4) 1.5 V IB = 0.6 A IC = 3A (see Notes 3 and 4) 1.3 V VCE = 10 V IC = 0.5 A f= 1 MHz 12 MHz VCB = 20 V IE = 0 f = 0.1 MHz 110 pF NOTES: 2. Inductive loop switching measurement. 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RθJC MIN TYP Junction to case thermal resistance MAX UNIT 1.25 °C/W inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted) PARAMETER † TEST CONDITIONS † tsv Voltage storage time IC = 3 A IB(on) = 0.6A tfi Current fall time VCC = 50 V (see Figures 1 and 2) tsv Voltage storage time IC = 3 A IB(on) = 0.6A tfi Current fall time VCC = 50 V TC = 100°C MIN VBE(off) = -5 V VBE(off) = -5 V MAX UNIT 1.4 µs 150 ns 1.5 µs 300 ns Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BUT11 NPN SILICON POWER TRANSISTOR PARAMETER MEASUREMENT INFORMATION 33 Ω +5V D45H11 BY205-400 33 Ω BY205-400 RB (on) 1 pF 180 µH V Gen 1 kΩ 68 Ω 0.02 µF vcc 2N2222 BY205-400 Vclamp = 400 V TUT 1 kΩ +5V 270 Ω BY205-400 5X BY205-400 1 kΩ 2N2904 Adjust pw to obtain IC D44H11 47 Ω For IC < 6 A VCC = 50 V For IC ≥ 6 A VCC = 100 V V 100 Ω BE(off) Figure 1. Inductive-Load Switching Test Circuit I B(on) A (90%) IB A - B = tsv Base Current B - C = trv D - E = tfi E - F = tti C B - E = txo V CE B 90% 10% Collector Voltage D (90%) E (10%) I C(on) Collector Current F (2%) NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: t r < 15 ns, Rin > 10 Ω, C in < 11.5 pF. B. Resistors must be noninductive types. Figure 2. Inductive-Load Switching Waveforms MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BUT11 NPN SILICON POWER TRANSISTOR MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 100 SAP791AB 10 1·0 0.1 0·01 1·0 tp = 10 µs tp = 100 µs tp = 1 ms tp = 10 ms DC Operation 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 3. 4 MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BUT11 NPN SILICON POWER TRANSISTOR MECHANICAL DATA TO-220 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO220 4,70 4,20 ø 10,4 10,0 3,96 3,71 1,32 1,23 2,95 2,54 see Note B 6,6 6,0 15,90 14,55 see Note C 6,1 3,5 1,70 1,07 0,97 0,61 1 2 14,1 12,7 3 2,74 2,34 5,28 4,88 VERSION 1 0,64 0,41 2,90 2,40 VERSION 2 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE MAY 1989 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 5