PXAC182002FC Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 – 1880 MHz Description The PXAC182002FC is a 180-watt LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include dual-path design, input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXAC182002FC Package H-37248-4 Features Single-carrier WCDMA Drive-up • Broadband internal input and output matching 24 • Asymmetrical Doherty design - Main: 70 W Typ (P1dB) - Peak: 110 W Typ (P1dB) 60 Efficiency 20 40 16 20 Gain 12 0 8 -20 PAR @ 0.01% CCDF 4 0 Efficiency (%) Peak/Average Ratio, Gain (dB) VDD = 28 V, IDQ = 400 mA, ƒ = 1880 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 30 35 40 45 50 c182002fc_g1 55 • Capable of handling 10:1 VSWR @28 V, 110 W (CW) output power • Integrated ESD protection • Low thermal resistance • Pb-free and RoHS compliant -40 25 • Typical pulsed CW performance, 1880 MHz, 28 V, combined outputs - Output power at P3dB = 194 W - Efficiency = 64% - Gain = 14 dB -60 Average Output Power (dBm) RF Characteristics Single-carrier WCDMA Specifications (tested in Infineon Doherty test fixture) VDD = 28 V, IDQ = 400 mA, VGSPEAK = 1.1 V, POUT = 28.2 W avg, ƒ = 1880 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Gain Gps 15.5 16.5 — dB Drain Efficiency hD 48.5 51 — % Adjancent Channel Power Ratio ACPR — –30 –26 dBc All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 8 Rev. 02.2, 2015-06-05 PXAC182002FC DC Characteristics (each side) Characteristic Conditions Symbol Min Typ Max Unit Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 0.1 µA VDS = 63 V, VGS = 0 V IDSS — — 1.0 µA On-State Resistance (main) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.18 — W (peak) VGS = 10 V, VDS = 0.1 V RDS(on) — 0.135 — W VDS = 28 V, IDQ = 400 mA VGS 2.55 2.65 2.75 V VDS = 28 V, IDQ = 0 A VGS 0.9 1.2 1.3 V VGS = 10 V, VDS = 0 V IGSS — — 0.1 µA Operating Gate Voltage (main) (peak) Gate Leakage Current Maximum Ratings Parameter Symbol Value Drain-Source Voltage VDSS 65 V Gate-Source Voltage VGS –6 to +10 V Operating Voltage VDD 0 to +32 Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Thermal Resistance (main, TCASE = 70°C, 28 W CW) RqJC 1.088 °C/W RqJC 0.587 °C/W (peak, TCASE = 70°C, 100 W CW) Unit V Ordering Information Type and Version Order Code Package Description Shipping PXAC182002FC V1 PXAC182002FCV1XWSA1 H-37248-4, earless flange Tray PXAC182002FC V1 R250 PXAC182002FCV1R250XTMA1 H-37248-4, earless flange Tape & Reel, 250 pcs Data Sheet 2 of 8 Rev. 02.2, 2015-06-05 PXAC182002FC Typical Performance (data taken in a production test fixture) Single-carrier WCDMA Drive-up Single-carrier WCDMA 3GPP Drive-up VDD = 28 V, IDQ = 400 mA, ƒ = 1805-1880 MHz, 3GPP WCDMA signal, PAR = 10 dB, BW = 3.84 MHz 60 -20 -20 50 -25 ACP Up 40 30 -40 -50 20 ACP Low Efficiency -60 -70 27 32 37 10 42 47 c182002fc_g2 52 1880 ACPL 1880 ACPU 1842.5 ACPL 1842.5 ACPU 1805 ACPL 1805 ACPU -30 -35 -40 -45 0 -50 27 Average Output Power (dBm) Gain 35 8 25 4 15 33 37 41 45 49 52 c182002fc_g4 53 57 65 Efficiency 50 Gain 15 5 5 35 24V Gain 28V Gain 32V Gain 24V Eff 28V Eff 32V Eff 10 27 35 43 51 20 c182002fc_g5 59 5 Output Power (dBm) Output Power (dBm) Data Sheet c182002fc_g3 20 Gain (dB) 45 Efficiency (%) Gain (dB) 55 Efficiency 29 25 65 16 0 47 IDQ = 400 mA, ƒ = 1880 MHz 1842.5 Gain 1805 Gain 1880 Gain 1880 Eff 1842.5 Eff 1805 Eff 12 42 CW Performance at various VDD VDD = 28 V, IDQ = 400mA 20 37 Average Output Power (dBm) CW Performance 24 32 Efficiency (%) -30 ACP Up & Low (dBc) -10 Efficiency(%) ACP Up & Low (dBc) VDD = 28 V, IDQ = 400 mA, ƒ = 1880 MHz, 3GPP WCDMA signal, PAR = 10 dB, BW = 3.84 MHz 3 of 8 Rev. 02.2, 2015-06-05 PXAC182002FC Typical Performance (cont.) CW Performance Small Signal Gain & Input Return Loss VDD = 28 V, IDQ = 400 mA 18 -10 16 -15 14 -20 IRL 12 10 1700 1750 1800 1850 1900 -25 Input Return Loss (dB) Gain (dB) Gain -30 2000 c182002fc_g6 1950 Frequency (MHz) Load Pull Performance Main Side Load Pull Performance – Pulsed CW signal: 160 µs, 10% duty cycle, 28 V, IDQ = 405 mA P1dB Max Output Power Max Drain Efficiency hD [%] Zl [ W] Gain [dB] POUT [dBm] POUT [W] hD [%] 86 54.0 6.49 – j2.19 21.9 47.2 52 66.6 49.3 85 57.6 5.82 – j2.44 21.7 47.5 56 66.3 49.5 89 55.2 4.53 – j2.29 21.5 47.7 59 67.9 Freq [MHz] Zs [W] Zl [ W] Gain [dB] POUT [dBm] POUT [W] 1810 3.94 – j10.15 2.92 – j5.27 19.2 49.4 1840 5.13 – j10.93 2.93 – j4.16 19.5 1880 5.90 – j12.44 2.73 – j5.17 19.2 Peak Side Load Pull Performance – Pulsed CW signal: 160 µs, 10% duty cycle, 28 V, IDQ = 685 mA P1dB Max Output Power Max Drain Efficiency hD [%] Zl [ W] Gain [dB] POUT [dBm] POUT [W] hD [%] 123 55.5 3.52 – j2.84 22.7 49.7 94 66.2 50.7 117 54.5 3.39 – j3.01 23.2 49.2 84 64.1 50.7 116 54.3 2.83 – j3.50 23.1 49.2 83 64.3 Freq [MHz] Zs [W] Zl [ W] Gain [dB] POUT [dBm] POUT [W] 1810 3.71 – j9.13 4.64 – j5.44 20.5 50.9 1840 4.76 – j8.65 4.66 – j5.68 20.6 1880 6.40 – j9.13 4.63 – j5.74 20.8 Data Sheet 4 of 8 Rev. 02.2, 2015-06-05 PXAC182002FC Reference Circuit , 1805 – 1880 MHz RO4350, .020 (60) RO4350, .020 (61) VGS VDD C217 C106 C209 C213 C211 R106 C108 C102 R104 C212 C210 C218 R101 R102 C105 R103 C203 S1 C201 RF_IN RF_OUT C219 C104 C208 C215 C101 C207 R105 C206 C216 C204 C202 VDD C107 C103 C214 VGSPK C205 PXAC182002FC_OUT_01 PXAC182002FC_IN_01 c 1 8 2 0 0 2 f c _ C D _ 0 3 - 2 4 - 2 0 1 5 Reference circuit assembly diagram (not to scale) Data Sheet 5 of 8 Rev. 02.2, 2015-06-05 PXAC182002FC Reference Circuit (cont.) Reference Circuit Assembly DUT PXAC182002FC V1 Test Fixture Part No. LTA/PXAC182002FC V1 PCB Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.66, ƒ = 1805 – 1880 MHz Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower Components Information Component Description Manufacturer P/N C101 Capacitor, 1.2 pF ATC ATC600F1R2CW250T C102 Capacitor, 0.5 pF ATC ATC600F0R5CW250T C103, C104, C105, C106 Capacitor, 18 pF ATC ATC600F180JW250T C107, C108 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T R101 Resistor, 50 Ω Richardson C8A50Z4A R102 Resistor, 18 ohms Panasonic Electronic Components ERJ-8GEYJ180V R103, R104 Resistor, 301 Ω Venkel CR0603-16W-3010FT R105, R106 Resistor, 10 Ω Panasonic Electronic Components ERJ-3GEYJ100V S1 Hybrid Coupler Anaren X3C19P1-03S C201, C207, C215, C218, C219 Capacitor, 18 pF ATC ATC600F180JW250T C202 Capacitor, 0.8 pF ATC ATC600F0R8AW250T C203 Capacitor, 5.1 pF ATC ATC600F5R1AW250T C204 Capacitor, 1.6 pF ATC ATC600F1R6AW250T C205, C217 Capacitor, 220 µF Cornell Dubilier Electronics SK221M050ST C206, C208, C209, C211, C213, C214, C216 Capacitor, 10 µF Taiyo Yuden UMK325C7106MM-T C210 Capacitor, 0.5 pF ATC ATC600F0R5AW250T C212 Capacitor, 1.6 pF ATC ATC600F1R6AW250T Input Output Pinout Diagram (top view) Main Peak D1 D2 G1 G2 S Pin Description D1 Drain device 1 (Main) D2 Drain device 2 (Peak) G1 Gate device 1 (Main) G2 Gate device 2 (Peak) S Source (flange) H-37248-4_pd_10-10-2012 Lead connections for PXAC182002FC Data Sheet 6 of 8 Rev. 02.2, 2015-06-05 PXAC182002FC Package Outline Specifications Package H-37248-4 (8.89 [.350]) (5.08 [.200]) 2X 45° X 2.72 [45° X .107] +0.13 -0.38 +0.005 [ R.030 -0.015 ] 4X R0.76 2X 4.83±0.51 [.190±0.020] FLANGE 9.78 [.385] CL D1 D2 LID 9.40 [.370] 19.43±0.51 [.765±0.020] CL G1 G2 4X 3.81 [.150] 2X 12.70 [.500] SPH 1.57 [.062] 19.81±0.20 [.780±0.008] 1.02 [.040] 0.0381 [.0015] -A- H-37248-4_po_02_01-09-2013 3.76±0.25 [.148±0.010] S CL 20.57 [.810] DiagramNotes—unlessotherwisespecified: 1. InterpretdimensionsandtolerancesperASMEY14.5M-1994. 2. Primarydimensionsaremm.Alternatedimensionsareinches. 3. Alltolerances±0.127[.005]unlessspecifiedotherwise. 4. Pins:D1,D2–drains;G1,G2–gates;S–source. 5. Leadthickness:0.10+0.076/–0.025mm[0.004+0.003/–0.001inch]. 6. Goldplatingthickness:1.14±0.38micron[45±15microinch]. Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 7 of 8 Rev. 02.2, 2015-06-05 PXAC182002FC V1 Revision History Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2014-09-23 Advance All Data Sheet reflects advance specification for product development 02 2015-03-24 Production All All Data Sheet reflects released product specification Revised all data and includes updated final specs, typical performance graphs, loadpull, reference circuit, package outline 02.1 2015-05-20 Production 1 Updated single-carrier WCDMA test spec 02.2 2015-06-05 Production 1 Corrected I/O in description paragraph, removed f1 from single-carrier WCDMA test spec condition We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: ([email protected]) To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International Edition 2015-06-05 Published by Infineon Technologies AG 85579 Neubiberg, Germany © 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 8 of 8 Rev. 02.2, 2015-06-05