MA111 Fast Recovery Diodes (FRD) MA649 Silicon planer type (cathode common) Unit : mm ● Low forward voltage V F ● Fast reverse recovery time trr 14.0±0.5 16.7±0.3 High reverse voltage VR 4.2±0.2 2.7±0.2 ø3.1±0.1 4.0 ● 5.5±0.2 1.4±0.1 Solder Dip ■ Features 4.2±0.2 10.0±0.2 7.5±0.2 0.7±0.1 For switching 0.8±0.1 1.3±0.2 +0.2 0.5 -0.1 2.54±0.25 5.08±0.5 ■ Absolute Maximum Ratings (Ta= 25˚C) Parameter Symbol 1 : Anode 2 : Cathode (common) 3 : Anode TO-220F(a) (TO-220 Full-Pack Package) 1 Rating Unit Repetitive peak reverse voltage VRRM 200 V Non-repetitive peak reverse voltage VRSM 200 V Average forward current IF(AV) 5 A Non-repetitive peak forward surge current IFSM* 30 A Junction temperature Tj – 40 to +150 ˚C Storage temperature Tstg – 40 to +150 ˚C 2 3 ■ Internal Connection * Sine half wave : 10ms/cycle 1 2 3 ■ Electrical Characteristics (Ta= 25˚C) Condition Symbol Parameter Repetitive peak reverse current Forward voltage (DC) Reverse recovery time typ max Unit VRRM= 200V, TC= 25˚C 100 µA IRRM2 VRRM= 200V, Tj=150˚C 6 mA VF IF= 2.5A, TC= 25˚C 1 V trr* IF=1A, IR=1A Rth(j-c)* Thermal resistance min IRRM1 Rth(j-a) 100 Flat direct current between junction and case Note 1. Rated input/output frequency : 10MHz 2. * trr measuring circuit 50Ω 50Ω trr IF D.U.T IR 5.5Ω 0.1 × IR ns 3 ˚C/W 63 ˚C/W MA649 Fast Recovery Diodes (FRD) IF – VF IR – VR 107 TC=25˚C 12 IR (nA) 10 Ta=150˚C 1 Reverse current Forward current IF (A) 106 25˚C 100˚C Average forward current PD(AV) (W) 100 PD(AV) – IF(AV) Ta=150˚C 105 100˚C 104 103 25˚C 0.1 102 0 0.4 0.8 1.2 Forward voltage 1.6 0 2.0 100 150 Reverse voltage (V) VF 50 200 250 102 1/3 1/2 DC 4 2 0 300 0 1 2 3 4 1/3 DC 1/6 4 3 2 Without heat sink 10 1 10–1 1 t0 t1 0 30 50 100 Case temperature 150 TC (˚C) 10–2 10–4 10–3 10–2 5 Average forward current IF(AV) (A) t0/t1=1/2 5 Thermal resistance Rth (˚C/W) (A) 6 Rth(t) – t 6 IF(AV) t0/t1=1/6 VR (V) IF(AV) – TC Average forward current 8 10 0.01 t0 t1 10 10–1 1 Time 10 t (s) 102 103 104 6