Application Note 1944 Single Event Effects Testing of the ISL70419SEH Introduction Key SEE Test Results The intense heavy ion environment encountered in space applications can cause a variety of transient and destructive effects in analog circuits, including single-event latch-up (SEL), single-event transients (SET) and single-event burnout (SEB). These effects can lead to system-level failures including disruption and permanent damage. For predictable and reliable system operation, these components have to be formally designed and fabricated for SEE hardness, followed by detailed SEE testing to validate the design. This report discusses the results of SEE testing of Intersil’s ISL70419SEH. • SOI process results in single event latch-up immunity Related Documents • No SEB up to 36V supply, LET = 86.4MeV•cm2/mg • Ultra fast recovery time from SET: < 10µs SEE Test Objective The objective of SEE testing of the ISL70419SEH were to evaluate its susceptibility to destructive events induced by single event effects, such as single event burnout and to determine its SET behavior. SEE Test Facility • ISL70419SEH Data Sheet Product Description The ISL70419SEH contains four very high precision amplifiers featuring the perfect combination of low noise vs power consumption. These devices are fabricated in a 40V advanced bonded wafer SOI process using deep trench isolation, resulting in a fully isolated structure. This choice of process technology results in latch-up free performance, whether by electrical or single event caused. These devices were also designed for enhance single event transient response resulting in fast SET recovery. A super-beta NPN input stage with input bias current cancellation provides low input bias current, low input offset voltage, low input noise voltage, and low 1/f noise corner frequency. These amplifiers also feature high open loop gain for excellent CMRR and THD+N performance. A complementary bipolar output stage enables high capacitive load drive without external compensation. These amplifier are designed to operate over a wide supply range of 4.5V to 36V. Applications for these amplifiers include precision active filters, low noise front ends, loop filters, data acquisition and charge amplifiers. The combination of high precision, low noise, low power and radiation tolerance provide the user with outstanding value and flexibility relative to similar competitive parts. The part is packaged in a 14 lead hermetic ceramic flat pack and operates over the extended temperature range of -55°C to +125°C. A summary of key full temperature range and radiation specifications follow: Testing was performed at the Texas A&M University (TAMU) Cyclotron Institute heavy ion facility. This facility is coupled to a K500 super-conducting cyclotron, which is capable of generating a wide range of test particles with the various energy, flux and fluence levels needed for advanced radiation testing. SEE Test Procedure The part was tested for single event burnout, using Au ions at 0°C incidence (LET = 86.4MeV•cm2/mg) with a case temperature of +125°C, and single event transient characterized using Ar, Kr, Ag and Pr ions with a case temperature of +25°C. The device under test (DUT) was mounted in the beam line and irradiated with heavy ions of the appropriate species. The parts were assembled in 14 lead dual in-line packages with the metal lid removed for beam exposure. The beam was directed onto the exposed die and the beam flux, beam fluence and errors in the device outputs were measured. The tests were controlled remotely from the control room. All input power was supplied from portable power supplies connected via cable to the DUT. The supply currents were monitored along with the device outputs. All currents were measured with digital ammeters, while all the output waveforms were monitored on a digital oscilloscope for ease of identifying the different types of SEE, displayed by the part. Events were captured by triggering on changes in the output. • Input Offset Voltage . . . . . . . . . . . . . . . . . . . . . . . 110µV, max. • Offset Voltage Drift . . . . . . . . . . . . . . . . . . . . . . . 1µV/°C, max. • Input Offset Current . . . . . . . . . . . . . . . . . . . . . . . . 10nA, max. • Input Bias Current . . . . . . . . . . . . . . . . . . . . . . . . . . 15nA, max. • Supply Current/Amplifier . . . . . . . . . . . . . . . . . . 0.75mA, max. • Gain Bandwidth Product . . . . . . . . . . . . . . . . . . . 1.5MHz, typ. July 17, 2014 AN1944.0 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Copyright Intersil Americas LLC 2014. All Rights Reserved Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries. All other trademarks mentioned are the property of their respective owners. Application Note 1944 Cross Section Calculation Cross sections (CS) are calculated as shown by Equation 1: CS (LET) = N/F (EQ. 1) where: • CS is the SET cross section (cm2), expressed as a function of the heavy ion LET • LET is the linear energy transfer in MeV·cm2/mg, corrected according to the incident angle, if any • N is the total number of SET events • F is fluence in particles/cm2 A value of 1/F is the assumed cross section when no event is observed. Single Event Burnout Results The first testing sequence looked at destructive effects due to burnout. A burnout condition is indicated by a permanent change in the device supply current after application of the beam. If the increased current can be reset by cycling power, it is termed a latch-up. No burnout was observed using Au ions at 0° up a supply voltage of ±18V. Testing was performed on four parts at TC = +125°C. All parts commenced testing with VS = ±18V and on subsequent tests VS voltage was increased by 2V until failure. All test runs were run to a fluence of 2.5x106/cm2. A power supply applied a DC voltage of 200mV to the non-inverting inputs of the amplifiers during the test. Functionality of all outputs were verified after exposure. IDD and IEE were recorded pre and post exposure and summed up. A 5% change in total supply current indicates permanent damage to the op amp. Test results demonstrated that all parts passed with VS = ±18V however, failed when the supply voltage was increased to VS = ±19V. Test data for VS = ±18V and VS = ±19V is shown in Tables 1 and 2, respectively. Single Event Transient Results Test Setup A a simplified schematic of the configuration of each op amp on board used during testing is shown in Figure 1. RF + RIN- IN- - 10k RIN+ IN+ + 10k ISL70419SEH (1/4) 100k VP V+ V- 0 VOUT VM Each operational amplifier was set up in a non-inverting operation with G = 10V/V. The IN- inputs were grounded and the input signal was applied to the IN+ pin. The reference input was also grounded. All the outputs were fed into a summer op amp which was out of the beam line. The output of the summer amp was used to trigger the scope, while channels 1 through 4 of the scope capture changes on the output of op amp A, B, C, and D of each device. The complete board schematic and silk screen of the board are included in Appendix A. Biasing used for SET test runs was VS = ±5V and ± 15V. Similar to SEL/B testing, a DC voltage of 200mV was applied to the non-inverting inputs of the amplifiers. Signals from the switch board in the control room were connected to four LECROY oscilloscopes to capture SETs on devices 5, 6, 7 and 8. Summary of the scope settings are as follows: TRIGGER CONNECTIONS • • • • Scope 1 is set to capture Device 5 Scope 2 is set to capture Device 6 Scope 3 is set to capture Device 7 Scope 4 is set to capture Device 8 CHANNEL CONNECTION ON ALL SCOPES FOR VS = ±5V • CH1 = OUTA 1V/div, CH2 = OUTB 1V/div • CH3 = OUTC 1V/div, CH4 = OUTD 1V/div • External trigger connected to output of summer amplifier CHANNEL CONNECTION ON ALL SCOPES FOR VS = ±15V • CH1 = OUTA 2V/div, CH2 = OUTB 2V/div • CH3 = OUTC 2V/div, CH4 = OUTD 2V/div • External trigger connected to output of summer amplifier Events are recorded when movement on output during beam exposure exceeds the definition of a SET. For the ISL70419SEH a SET is a transient that exceeds the set window trigger of ±200mV for VS = ±5V and for VS = ±15V. Cross Section Results One approach to characterize the SET response of an integrated circuit is to represent the data on a LET threshold plot. Figure 2 shows the overall cross section of the four devices tested versus the LET level, for VS = ±5V and ±15V. It can be noted that the cross section is independent of the supply voltage. Data from Figure 2 is represented in Table 3. Figures 3 and 4 show the LET threshold plot of each device independently for VS = ±5V and ±15V. The graphs also show that there is no part-to-part sensitivity as the graphs lie almost directly on top of each other. Complete data for Figures 3 and 4 are available in Appendix A. RREF+ 100k VREF FIGURE 1. ISL70419SEH SEE TEST SCHEMATIC Submit Document Feedback 2 AN1944.0 July 17, 2014 Application Note 1944 TABLE 1. ISL70419SEH DETAILS OF SEB/L TESTS AT VS = LET = 86.4MeV · cm2/mg TEMP (°C) LET (MeV . cm2/mg) +125 86.4 +125 86.4 +125 86.4 +125 86.4 SUPPLY VOLTAGE (V) ±18 SUPPLY CURRENT PREEXPOSURE (mA) SUPPLY CURRENT POSTEXPOSURE (mA) DESTRUCTIVE EVENTS CUMULATIVE FLUENCE (PARTICLES/cm2) CUMULATIVE CROSS SECTION (cm2) DEVICE ID SEB 0 2.5 x 106 5.0 x 10-7 1 PASS 0 2.5 x 106 5.0 x 10-7 2 PASS 0 2.5 x 106 5.0 x 10-7 3 PASS 5.340 0 2.5 x 106 5.0 x 10-7 4 PASS TOTAL EVENTS 0 4.901 ±18 4.949 4.701 ±18 4.842 5.263 ±18 5.280 5.335 OVERALL FLUENCE 1.0 x 107 OVERALL CS 1.25 x 10-7 TOTAL UNITS 4 TABLE 2. ISL70419SEH DETAILS OF SEB/L TESTS AT LET = 86.4MeV · cm2/mg SUPPLY CURRENT PREEXPOSURE (mA) SUPPLY CURRENT POSTEXPOSURE (mA) DESTRUCTIVE EVENTS CUMULATIVE FLUENCE (PARTICLES/cm2) CUMULATIVE CROSS SECTION (cm2) DEVICE ID SEB TEMP (°C) LET (MeV . cm2/mg) SUPPLY VOLTAGE (V) +125 86.4 ±19 4.980 18.780 1 2.5 x 106 5.0 x 10-7 1 FAIL +125 86.4 ±19 4.877 18.146 1 2.5 x 106 5.0 x 10-7 2 FAIL +125 86.4 ±19 5.318 19.550 1 2.5 x 106 5.0 x 10-7 3 FAIL +125 86.4 ±19 5.377 19.900 1 2.5 x 106 5.0 x 10-7 4 FAIL TABLE 3. DETAILS OF THE LET THRESHOLD PLOT OF THE ISL70419SEH SUPPLY VOLTAGE (V) ION ANGLE EFFECTIVE LET (MeV . cm2/mg) FLUENCE PER RUN (PARTICLES/cm2) NUMBER OF DEVICES TESTED TOTAL SET EVENT CS (cm2) ±5 Ar 0 8.5 2.0 x 106 4 690 8.63 x 10-5 ±5 Kr 0 28 2.0 x 106 4 8566 1.07 x 10-3 4 9025 1.13 x 10-3 ±5 Ag 0 43 2.0 x 106 ±5 Pr 0 59.2 2.0 x 106 4 9588 1.2 x 10-3 ±15 Ar 0 8.5 2.0 x 106 4 695 8.69 x 10-5 ±15 Kr 0 28 2.0 x 106 4 8103 1.01 x 10-3 4 9344 1.17 x 10-3 4 9735 1.22 x 10-3 ±15 Ag 0 43 2.0 x 106 ±15 Pr 0 59.2 2.0 x 106 Submit Document Feedback 3 AN1944.0 July 17, 2014 Application Note 1944 CROSS SECTION (cm2) 1.00E-02 1.00E-03 VS = ±5V VS = ±15V 1.00E-04 1.00E-05 0 10 20 30 40 50 60 70 LET (MeV•cm2/mg) FIGURE 2. SET CROSS SECTION vs LINEAR ENERGY TRANSFER vs SUPPLY VOLTAGE 1.00E-02 1.00E-02 8 CROSS SECTION (cm2) CROSS SECTION (cm2) 6 1.00E-03 8 5 1.00E-04 7 1.00E-05 0 10 20 30 40 50 60 LET (MeV•cm2/mg) FIGURE 3. SET CROSS SECTION vs LET WITH VS = ±5V FOR DEVICES 5, 6, 7 and 8 1.00E-03 6 5 1.00E-04 7 1.00E-05 0 10 20 30 40 50 60 LET (MeV•cm2/mg) FIGURE 4. SET CROSS SECTION vs LET WITH VS = ±15V FOR DEVICES 5, 6, 7 and 8 Single Event Transient Response The ISL70419SEH was designed for single event transient (SET) mitigation with a goal of recovering from an SET in 10µs or less. Figures 5 through 16 plot the SET duration outside the ±200mV window versus the extreme deviation for the various devices tested and channels. This data is representative of the typical response of the ISL70419SEH and provides a quick way of categorizing the SET by magnitude and duration. All captured SET had durations of equal or less than 10µs outside of the ±200mV window about the nominal amplifier output of 2V. There are both positive and negative deviation on most of the captures, while the rest of the transients were either only positive or negative. Figures 17 through 28 are the composite plots of the scatter plots shown in Figures 5 through 16. Submit Document Feedback 4 AN1944.0 July 17, 2014 Application Note 1944 Single Event Transient Recovery Time vs Peak Deviation, VS = ±5V FIGURE 5. DEVICE 5, CHANNEL A, RUN 101, VS = ±5V, LET = 8.5MeV · cm2/mg FIGURE 6. DEVICE 6, CHANNEL B, RUN 201, VS = ±5V, LET = 28MeV · cm2/mg FIGURE 7. DEVICE 7, CHANNEL C, RUN 301, VS = ±5V, LET = 43MeV · cm2/mg FIGURE 8. DEVICE 8, CHANNEL D, RUN 307, VS = ±5V, LET = 59.2MeV · cm2/mg FIGURE 9. DEVICE 7, CHANNEL A, RUN 307, VS = ±5V, LET = 59.2MeV · cm2/mg FIGURE 10. DEVICE 6, CHANNEL B, RUN 306, VS = ±5V, LET = 59.2MeV · cm2/mg Submit Document Feedback 5 AN1944.0 July 17, 2014 Application Note 1944 Single Event Transient Recovery Time vs Peak Deviation, VS = ±15V FIGURE 11. DEVICE 5, CHANNEL A, RUN 102, VS = ±15V, LET = 8.5MeV · cm2/mg FIGURE 12. DEVICE 6, CHANNEL B, RUN 202, VS = ±15V, LET = 28MeV · cm2/mg FIGURE 13. DEVICE 7, CHANNEL C, RUN 304, VS = ±15V, LET = 43MeV · cm2/mg FIGURE 14. DEVICE 8, CHANNEL D, RUN 308, VS = ±15V, LET = 59.2MeV · cm2/mg FIGURE 15. DEVICE 7, CHANNEL A, RUN 308, VS = ±15V, LET = 59.2MeV · cm2/mg FIGURE 16. DEVICE 8, CHANNEL B, RUN 308, VS = ±15V, LET = 59.2MeV · cm2/mg Submit Document Feedback 6 AN1944.0 July 17, 2014 Application Note 1944 Single Event Transient Composite Plots, VS = ±5V FIGURE 17. DEVICE 5, CHANNEL A, RUN 101, VS = ±5V, LET = 8.5MeV · cm2/mg FIGURE 18. DEVICE 6, CHANNEL B, RUN 201, VS = ±5V, LET = 28MeV · cm2/mg FIGURE 19. DEVICE 7, CHANNEL C, RUN 301, VS = ±5V, LET = 43MeV · cm2/mg FIGURE 20. DEVICE 8, CHANNEL D, RUN 307, VS = ±5V, LET = 59.2MeV · cm2/mg FIGURE 21. DEVICE 7, CHANNEL A, RUN 307, VS = ±5V, LET = 59.2MeV · cm2/mg FIGURE 22. DEVICE 6, CHANNEL B, RUN 306, VS = ±5V, LET = 59.2MeV · cm2/mg Submit Document Feedback 7 AN1944.0 July 17, 2014 Application Note 1944 Single Event Transient Recovery Composite Plots, VS = ±15V FIGURE 23. DEVICE 5, CHANNEL A, RUN 102, VS = ±15V, LET = 8.5MeV · cm2/mg FIGURE 24. DEVICE 6, CHANNEL B, RUN 202, VS = ±15V, LET = 28MeV · cm2/mg FIGURE 25. DEVICE 7, CHANNEL C, RUN 304, VS = ±15V, LET = 43MeV · cm2/mg FIGURE 26. DEVICE 8, CHANNEL D, RUN 308, VS = ±15V, LET = 59.2MeV · cm2/mg FIGURE 27. DEVICE 7, CHANNEL A, RUN 308, VS = ±15V, LET = 59.2MeV · cm2/mg FIGURE 28. DEVICE 8, CHANNEL B, RUN 308, VS = ±15V, LET = 59.2MeV · cm2/mg Submit Document Feedback 8 AN1944.0 July 17, 2014 Application Note 1944 There is correlation to the duration of the SET with respect to the linear energy transfer. Lower LET values e.g. 8.5MeV · cm2/mg had the quicker response times returning the SET window of ±200mV. As the LET increases so does the recovery time until it saturates at LET = 43MeV · cm2/mg. The same correlation is found on the extreme voltage deviation versus LET. Reviewing Figures 5 through 16 shows that lower LET have a smaller deviation than the SETs caused by higher LET values. Another interesting note is the correlation of channel-to-channel common SET occurrences at higher LET values. For example on run 305, which is tested with LET = 59.2MeV · cm2/mg, roughly 75% of the SET were common on all channels. For run 101, which is tested with LET = 8.5MeV · cm2/mg, 0% of the SET were common to all four channels. This correlation start to occur when the LET = 28MeV · cm2/mg. An explanation of the commonality is that a device or circuit which is common to all amplifiers is being upset. For example the ESD clamps which are common to all four amplifiers within the IC, could be susceptible at hIgher LET and causing SETs on the output of all four channels. Figures 29 and 30 are SETs of Channel 1 (OUT A) and Channel 2 (OUT B) of device 5 in run 201.These events occurred simultaneously on all four channels. Summary Single Event Burnout No single event burnout (SEB) was observed for the device up to an LET of 86.4MeV · cm2/mg (+125°C) at a maximum voltage supply of VS = ± 18V. This gives 20% margin on the recommended supply voltage of VS = ± 15V. Since the operational amplifier has no internal ground reference, the 36V supply range can be partitioned as desired, for example have a single supply where the V+ pin can be tied to 36V and the V- pin tied to ground (0V). It is also not surprising that since the process is an SOI process, there was no latch-up observed on the device. Single Event Transient Based on the results presented, the ISL70419SEH op amp offers advantages over the competitors part by having better SET performance yet keeping the high accuracy of a precision op amp. The length of worst case SETs can be 6µs for devices with VS = ±5V and 10µs for devices with VS = ±15V. This part does not experience the long recovery time (>100µs) during a single event transient seen on other competitor op amps in a comparator application. This may be explained by the higher drive capability of the ISL70419SEH and its ability to drive highly capacitive loads. Magnitude of the deviation for VS = ±5V was to 1V below the rail in the positive direction and 1V above the rail in the negative direction, limited by the VOH and VOL specifications of the amplifier. For amplifiers supplied with a VS = ±15V, the transient excursions were much larger, however they do not extend to the expected VOH or VOL levels of ±13.5V. All the transients observed were 8.5V deviations or less with all the larger transient occurring in the negative direction. Recovery time of the transients were less than or equal to 10µs. Overall, the ISL70419SEH is very well behaved in a heavy ion environment. In space flight applications, the ISL70419SEH should not require filtering or other types of SET mitigation techniques. The ISL70419SEH offers a competitive advantage over other rad hard op amps by offering the following: FIGURE 29. CHANNEL 1 COMPOSITE PLOT OF COMMON SETs • No single event burnout up to ±36V • SOI process for latch-up immunity • Fast recovery from single event transients FIGURE 30. CHANNEL 2 COMPOSITE PLOT OF COMMON SETs Submit Document Feedback 9 AN1944.0 July 17, 2014 Application Note 1944 Appendix A Appendix A includes the data from Figures 3 and 4 in tabular format, complete test schematic, and board silk screen images. TABLE 4. DATA OF CHANNEL CROSS SECTION OF THE ISL70419SEH REPRESENTED IN FIGURE 3 SUPPLY VOLTAGE (V) LET (MeV . cm2/mg) DEVICE RUN NUMBER FLUENCE PER RUN (PARTICLES/cm2) EVENTS EVENT CS (cm2) ±5 8.5 5 101 2.0 x 106 171 8.55 x 10-5 ±5 28 5 201 2.0 x 106 1988 9.94 x 10-4 ±5 43 5 301 2.0 x 106 2155 1.08 x 10-3 ±5 59.2 5 306 2.0 x 106 2511 1.26 x 10-3 ±5 8.5 6 101 2.0 x 106 184 9.20 x 10-5 ±5 28 6 201 2.0 x 106 2173 1.09 x 10-3 ±5 43 6 301 2.0 x 106 2373 1.19 x 10-3 ±5 59.2 6 306 2.0 x 106 2268 1.13 x 10-3 ±5 8.5 7 103 2.0 x 106 158 7.90 x 10-5 ±5 28 7 203 2.0 x 106 2074 1.04 x 10-3 ±5 43 7 303 2.0 x 106 2172 1.09 x 10-3 ±5 59.2 7 307 2.0 x 106 2472 1.24 x 10-3 ±5 8.5 8 103 2.0 x 106 177 8.85 x 10-5 ±5 28 8 203 2.0 x 106 2331 1.17 x 10-3 ±5 43 8 303 2.0 x 106 2325 1.16 x 10-3 ±5 59.2 8 307 2.0 x 106 2337 1.17 x 10-3 TABLE 5. DATA OF CHANNEL CROSS SECTION OF THE ISL70419SEH REPRESENTED IN FIGURE 4 SUPPLY VOLTAGE (V) LET (MeV · cm2/mg) DEVICE RUN NUMBER FLUENCE PER RUN (PARTICLES/cm2) EVENTS EVENT CS (cm2) ± 15 8.5 5 102 2.0 x 106 149 7.45 x 10-5 ± 15 28 5 202 2.0 x 106 1942 9.71 x 10-4 ± 15 43 5 302 2.0 x 106 2273 1.14 x 10-3 ± 15 59.2 5 305 2.0 x 106 2703 1.35 x 10-3 ± 15 8.5 6 102 2.0 x 106 170 8.50 x 10-5 ± 15 28 6 202 2.0 x 106 2082 1.04 x 10-3 ± 15 43 6 302 2.0 x 106 2362 1.18 x 10-3 ± 15 59.2 6 305 2.0 x 106 2561 1.28 x 10-3 ± 15 8.5 7 104 2.0 x 106 178 8.90 x 10-5 ± 15 28 7 204 2.0 x 106 1990 9.95 x 10-4 ± 15 43 7 304 2.0 x 106 2331 1.17 x 10-3 Submit Document Feedback 10 AN1944.0 July 17, 2014 Application Note 1944 TABLE 5. DATA OF CHANNEL CROSS SECTION OF THE ISL70419SEH REPRESENTED IN FIGURE 4 (CONTINUED) SUPPLY VOLTAGE (V) LET (MeV · cm2/mg) DEVICE RUN NUMBER FLUENCE PER RUN (PARTICLES/cm2) EVENTS EVENT CS (cm2) ± 15 59.2 7 308 2.0 x 106 2301 1.15 x 10-3 ± 15 8.5 8 104 2.0 x 106 198 9.90 x 10-5 ± 15 28 8 204 2.0 x 106 2089 1.04 x 10-3 ± 15 43 8 304 2.0 x 106 2378 1.19 x 10-3 ± 15 59.2 8 308 2.0 x 106 2170 1.09 x 10-3 Submit Document Feedback 11 AN1944.0 July 17, 2014 Submit Document Feedback V1- VREF1 GND J7 J6 V1+ J9 VREF2 J11 V- J14 V+ REF1 0 IN2+ OPEN VP OPEN IN1+ C11 OUTB 10K 100K +IN_C -IN_C VOUT_B V+ V- DNP DNP R53 C39 C33 10K OUTD2 AMPA 6 3 4 R70 OUTA2 C25 0.1UF OUTB2 VP2 OUTC2 0.01UF CLOSE TO PART OUTD2 TP2 R57 R48 10K 10K C46 1UF 0.1UF 1 C28 VM2 CLOSE TO PART DNP R62 C29 D4 C45 2 5 0.01UF 0 J18 R49 0 V4+ GND TP5 TP6 7 R37 0 1 C42 J12 J10 V2+ R35 1 2 0 10K 2 R50 3 10K V+ V- R51 10K AMPB 6 TP7 U4 ISL28127FBZ C44 0.01UF D2 D2 OUT R63 0.01UF GND TP1 DNP R61 R47 100K 4 V3+ DNP OPEN R43 3 4 OUTC2 0 R33 0.1UF C21 2 5 C37 9 GND J8 C9 0.1UF C8 0.01UF 0 C36 OPEN OPEN C23 0 R55 VM2 IN2+ 10 R46 C41 11 8 VOUT_C 100K OPEN IN2+ 7 3 4 2 R3 R69 0 V4- TP8 TP3 U3 ISL28127FBZ 0.1UF AN1944.0 July 17, 2014 C7 R4 10K -IN_C 12 ISL70417SEHVF ISL70419SEH DNP DNP R18 OUTD 10K 10K VOUT_B C19 1UF 10K C2 OUTC +IN_C -IN_B 7 V2- R2 0.01UF OUTB V- OUTD2 13 J17 DNP 100K -IN_D +IN_D 1 2 0 R56 R27 10K OUTB2 VOUT_D -IN_A +IN_A +IN_B 6 R31 14 R40 OUTD R9 10K 5 C2 OUT R65 R42 V+ 5 OUTC2 MAKE SURE THERE IS SYMMETRY WITH RESPECT TO THE GAIN SETTING COMPONENTS R23 R1 J16 OPEN DNP R17 R13 VP2 IN2+ 4 OPEN C13 OPEN C5 3 OPEN VOUT_A 2 IN2+ C17 OUTA OUTA2 100K 1 10K 0 R14 2 R59 C32 OPEN U2 C12 R5 10K C31 OPEN C6 J5 1 4 3 5 R26 0 OPEN D1 OUT R45 100K 1 2 0 OPEN R41 B2 OUT R66 PLACE U1 AND U2 WITHIN A 1 INCH DIAMETER OUTC R8 2 VOUT_C C18 DNP J4 1 OUTC 8 OUTB2 C35 OPEN R30 4 3 5 OPEN 9 ISL70417SEHVF ISL70419SEH C15 OPEN C1 OUT IN1+ 10 VM C43 DNP R28 DNP R12 OUTB R25 7 +IN_B -IN_B IN OPEN R16 C4 4 3 0 6 11 C34 0 R7 2 OPEN J2 1 5 5 0 IN1+ 12 V- V+ R44 13 Application Note 1944 B1 OUT OPEN 4 IN -IN_D +IN_D DNP VP -IN_A +IN_A R60 2 3 100K DNP IN1+ R39 OUTD 14 VOUT_D R54 C10 VOUT_A C40 1 1 2 10K OPEN C3 OUTA 100K R24 OPEN U1 R29 R15 R11 4 3 C30 OPEN OPEN C16 0 1 J15 2 5 0 OPEN OUTA R6 2 DNP J3 1 DNP 12 5 A2 OUT R64 OUTA2 MAKE SURE THERE IS SYMMETRY WITH RESPECT TO THE GAIN SETTING COMPONENTS A1 OUT 100K R67 R58 CLOSE TO PART 0.01UF CLOSE TO PART OUT 0.1UF C24 R52 10K C38 DNP 0 0 1 2 R68 J13 5 C26 VM 0.01UF OPEN IN2+ 1 3 4 2 OUT 0.1UF C20 2 1 C27 1UF D3 0.1UF C1 1 IN1+ 0 3 4 0 C14 R36 0 R38 10K R32 R21 R19 DNP 1 2 4 3 5 R10 R22 J1 100K 2 IN1+ R34 D1 4 3 C22 1UF R20 0 V3- TP4 DRAWN BY: ENGINEER: FIGURE 31. ISL70419SEH SEE TEST BOARD SCHEMATIC DATE: DRAWING TITLE 07/16/2013 ISL70417SEH SEE TEST BOARD RH QUAD OP AMP OSCAR MANSILLA SIZE C C FILENAME: DRAWING NO. ISL70417SEHENG1 REV SHEET Application Note 1944 CONFIDENTIAL IN REVIEW FIGURE 32. ISL70419SEH SEE TEST BOARD TOP VIEW Submit Document Feedback 13 AN1944.0 July 17, 2014 Application Note 1944 CONFIDENTIAL IN REVIEW FIGURE 33. ISL70419SEH SEE TEST BOARD BOTTOM VIEW Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that the Application Note or Technical Brief is current before proceeding. For information regarding Intersil Corporation and its products, see www.intersil.com Submit Document Feedback 14 AN1944.0 July 17, 2014