RFP8P10 Data Sheet July 1999 8A, 100V, 0.400 Ohm, P-Channel Power MOSFET Features This P-Channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. • rDS(ON) = 0.400Ω File Number 1496.2 • 8A, 100V • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Formerly developmental type TA17511. Ordering Information PART NUMBER RFP8P10 PACKAGE TO-220AB G BRAND S RFP8P10 NOTE: When ordering, include the entire part number. Packaging TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) 4-165 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999. RFP8P10 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFP8P10 UNITS Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS -100 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR -100 V Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID 8 A Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 20 A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS ±20 V Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75 W Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.6 W/oC Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX Drain to Source Breakdown Voltage BVDSS ID = -250µA, VGS = 0 Gate Threshold Voltage VGS(TH) VGS = VDS, ID = -250µA -2 - -4 V VDS = Rated BVDSS, VGS = 0V - - 1 µA VDS = 0.8 x Rated BVDSS, VGS = 0V TJ = 125oC - - 25 µA VGS = ±20V, VDS = 0 - - ±100 nA Zero Gate Voltage Drain Current IDSS Gate to Source Leakage Current IGSS -100 UNITS V Drain to Source On Resistance (Note 2) rDS(ON) ID = 8A, VGS = -10V (Figures 6, 7) - - 0.400 Ω Drain to Source On Voltage (Note 2) VDS(ON) ID = 8A, VGS = -10V - - 3.2 V ID ≈ 4A, VDD = 50V, RG = 50Ω, VGS = -10V RL = 12Ω, (Figure 10) - 18 60 ns - 70 150 ns td(OFF) - 166 275 ns tf - 94 175 ns - - 1500 pF - - 700 pF - - 300 pF Turn-On Delay Time td(ON) Rise Time tr Turn-Off Delay Time Fall Time Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS RθJC Thermal Resistance, Junction to Case VGS = 0V, VDS = 25V, f = 1MHz (Figure 9) - - 1.67 oC/W MIN TYP MAX UNITS ISD = -4A - - -1.4 V ISD = -4A, dlSD/dt = -100A/µs - 200 - ns RFP8P10 Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Diode Reverse Recovery Time SYMBOL VSD trr TEST CONDITIONS NOTES: 2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2% 3. Repetitive rating: pulse width is limited by maximum junction temperature. 4-166 RFP8P10 1.2 10 1.0 8 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER Typical Performance Curves 0.8 0.6 0.4 6 4 2 0.2 0 0 50 100 0 25 150 50 75 FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 100 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 150 24 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX TC = 25oC 20 ID MAX CONTINUOUS DC 1 125 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE TJ = MAX RATED TC = 25oC 10 100 TC, CASE TEMPERATURE (oC) TC, CASE TEMPERATURE (oC) OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) VGS = -8V VGS = -7V VGS = -20V 16 VGS = -6V VGS = -10V 12 VGS = -9V VGS = -5V 8 VGS = -4V 4 VGS = -3V 0.1 0 -1 -10 -100 VDS, DRAIN TO SOURCE VOLTAGE (V) -1 0 -1000 0.4 24 VDS = 10V PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 20 -40oC 125oC 12 8 4 125oC -40oC 0 -1 -2 -3 -4 -5 -6 VGS, GATE TO SOURCE VOLTAGE (V) FIGURE 5. TRANSFER CHARACTERISTICS 4-167 VGS = 10V PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 25oC 16 -7 -7 FIGURE 4. SATURATION CHARACTERISTICS rDS(ON), DRAIN TO SOURCE ON RESISTANCE (Ω) IDS(ON), DRAIN TO SOURCE CURRENT (A) FIGURE 3. FORWARD BIAS SAFE OPERATING AREA -3 -5 -6 -2 -4 VDS, DRAIN TO SOURCE VOLTAGE (V) -8 125oC 0.3 25oC 0.2 -40oC 0.1 0 0 2 4 8 12 6 10 14 ID, DRAIN CURRENT (A) 16 18 20 FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT RFP8P10 (Continued) PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX ID = 8A, VGS = 10V 1.5 1.0 0.5 0 -50 50 0 100 150 1.4 ID = 250µA VDS = VGS 1.2 1.0 0.8 0.6 -50 0 50 100 TJ, JUNCTION TEMPERATURE (oC) TJ, JUNCTION TEMPERATURE (oC) FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 2400 C, CAPACITANCE (pF) 1600 CISS 1200 800 COSS 400 CRSS VDS, DRAIN TO SOURCE VOLTAGE (V) 100 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGD 2000 0 150 10 VDD = BVDSS 75 GATE SOURCE VOLTAGE 8 VDD = VDSS RL = 12.5Ω IG (REF) = 0.92mA VGS = -10V 50 6 4 0.75BVDSS 0.75BVDSS 0.50BVDSS 0.50BVDSS 0.25BVDSS 0.25BVDSS 25 2 DRAIN SOURCE VOLTAGE 0 0 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) 0 50 I (REF) 20 G IG (ACT) t, TIME (ms) I (REF) 80 G IG (ACT) NOTE: Refer to Intersil Applications Notes AN7254 and AN7260 FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms tON tOFF td(OFF) td(ON) tr 0 RL DUT VGS RG VDD + tf 10% 10% VDS VGS 0 90% 90% 10% 50% 50% PULSE WIDTH 90% FIGURE 11. SWITCHING TIME TEST CIRCUIT 4-168 FIGURE 12. RESISTIVE SWITCHING WAVEFORMS VGS, GATE TO SOURCE VOLTAGE (V) NORMALIZED DRAIN TO SOURCE ON RESISTANCE 2.0 NORMALIZED GATE THRESHOLD VOLTAGE Typical Performance Curves RFP8P10 Test Circuits and Waveforms (Continued) -VDS (ISOLATED SUPPLY) CURRENT REGULATOR 0 VDS DUT 12V BATTERY 0.2µF 50kΩ 0.3µF Qgs Qg(TOT) DUT G VGS Qgd D VDD 0 S IG(REF) IG CURRENT SAMPLING RESISTOR 0 +VDS ID CURRENT SAMPLING RESISTOR FIGURE 13. GATE CHARGE TEST CIRCUIT IG(REF) FIGURE 14. GATE CHARGE WAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 4-169 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029