RFP10P15 Data Sheet -10A, -150V, 0.500 Ohm, P-Channel Power MOSFET This P-Channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. October 1999 File Number 1595.2 Features • -10A, -150V • rDS(ON) = 0.500Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance Formerly developmental type TA9404. • Majority Carrier Device Ordering Information • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” PART NUMBER RFP10P15 PACKAGE TO-220AB BRAND RFP10P15 Symbol NOTE: When ordering, include the entire part number. D G S Packaging TO-220AB DRAIN (TAB) 1 SOURCE DRAIN GATE CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 407-727-9207 | Copyright © Intersil Corporation 1999 RFP10P15 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20KΩ (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL Package Body for 10s, See Techbrief 334 (for TO-220) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg RFP10P15 -150 -150 10 30 ±20 75 0.6 -55 to 150 UNITS V V A A V W W/oC oC 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC. TC = 25oC, Unless Otherwise Specified Electrical Specifications PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS -150 - - V Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0 Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA -2 - -4 V VDS = Rated BVDSS, VGS = 0V - - 1 µA VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC - - 25 µA IGSS VGS = ±20V, VDS = 0 - - ±100 nA Drain to Source On Voltage (Note 2) VDS(ON) ID = 10A, VGS = -10V - - -5.0 V Drain to Source On Resistance (Note 2) rDS(ON) ID = 10A, VGS = -10V, (Figures 6, 7) - - 0.500 Ω ID ≈ 10A, VDS = -75V, RG = 50Ω RL = 7.5Ω, VGS = -10V (Figures 10, 11, 12) - 24 50 ns - 74 150 ns td(OFF) - 138 225 ns tf - 61 100 ns - - 1700 pF - - 600 pF - - 350 pF 1.25 oC/W 1.67 oC/W Zero Gate Voltage Drain Current IDSS Gate to Source Leakage Current Turn-On Delay Time td(ON) Rise Time tr Turn-Off Delay Time Fall Time Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Thermal Resistance, Junction to Case RθJC VGS = 0V, VDS = -25V f = 1MHz (Figure 9) RFM10P12, RFM10P15 - - RFP10P12, RFP10P15 Source to Drain Diode Specifications PARAMETER SYMBOL Source to Drain Diode Voltage (Note 2) Reverse Recovery Time VSD trr TEST CONDITIONS MIN TYP MAX UNITS ISD = -10A - - 1.4 V ISD = -10A, dlSD/dt = 100A/µs - 210 - ns NOTES: 2. Pulsed: Pulse Duration = 300µs Max, Duty Cycle ≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. 2 RFP10P15 Typical Performance Curves -12 1.2 -10 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER -11 0.8 0.6 0.4 -8 RFM10P12, RFM10P15 -7 -6 RFP10P12, RFP10P15 -5 -4 -3 -2 0.2 0 -9 -1 0 50 100 0 25 150 50 75 ID MAX CONTINUOUS 10 DC 1 RFM10P12, RFP10P12 24 20 16 VGS = -8V 12 VGS = -7V 8 VGS = -5V 4 14 -10 -100 VDS, DRAIN TO SOURCE VOLTAGE (V) -1 0 -1000 25oC 12 -40oC 10 8 125oC 6 4 125oC 2 -40oC -1 -9 -10 18 20 0.8 VDS = -10V PULSE DURATION = 80µs 0 -3 -5 -7 -6 -8 -2 -4 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. SATURATION CHARACTERISTICS rDS(ON), DRAIN TO SOURCE ON RESISTANCE (Ω) ID(ON), ON STATE DRAIN CURRENT (A) VGS = -6V 0 -1 FIGURE 3. FORWARD BIAS SAFE OPERATING AREA 0 VGS = -10V VGS = -20V RFM10P15, RFP10P15 0.1 150 PULSE DURATION = 80µs TC = 25oC 28 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 32 TJ = MAX RATED TC = 25oC OPERATION IN THIS AREA LIMITED BY rDS(ON) 125 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE 100 100 TC, CASE TEMPERATURE (oC) TC, CASE TEMPERATURE (oC) -3 -5 -4 -6 VGS, GATE TO SOURCE VOLTAGE (V) -2 FIGURE 5. TRANSFER CHARACTERISTICS 3 -7 -8 VGS = -10V PULSE DURATION = 80µs 0.7 0.6 125oC 0.5 0.4 25oC 0.3 -40oC 0.2 0.1 0 0 2 4 8 12 6 10 14 ID, DRAIN CURRENT (A) 16 FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT RFP10P15 Typical Performance Curves (Continued) 2.0 1.4 ID = 250µA VDS = VGS 1.3 VGS = 10V NORMALIZED GATE 1.5 1.0 0.5 THRESHOLD VOLTAGE 1.1 1.0 0.9 0.8 0.7 0 -50 50 100 0 TJ, JUNCTION TEMPERATURE (oC) 0.6 -50 150 FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 150 150 DRAIN TO SOURCE VOLTAGE (V) CISS 1200 1000 800 COSS 600 400 CRSS 200 10 VDD = BVDSS VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGD 1400 0 0 50 100 TJ, JUNCTION TEMPERATURE (oC) FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 1600 C, CAPACITANCE (pF) 1.2 112.5 GATE SOURCE VOLTAGE VDD = BVDSS 8 RL = 15 IG(REF) = 0.84mA VGS = -10V 75 6 0.75BVDSS 0.50BVDSS 0.25BVDSS 4 37.5 2 DRAIN SOURCE VOLTAGE 0 0 -10 -20 -30 -40 -50 NOTE: FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 0 20 VDS, DRAIN TO SOURCE VOLTAGE (V) IG(REF) IG(ACT) t, TIME (µs) 80 IG(REF) IG(ACT) Refer to Intersil Applications Notes AN7254 and AN7260 FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms tON tOFF td(OFF) td(ON) tr 0 DUT VGS VDD + tf 10% 10% RL RG VDS VGS 0 90% 90% 10% 50% 50% PULSE WIDTH 90% FIGURE 11. SWITCHING TIME TEST CIRCUIT 4 GATE TO SOURCE VOLTAGE (V) NORMALIZED DRAIN TO SOURCE ON RESISTANCE (mΩ) ID = -10A FIGURE 12. RESISTIVE SWITCHING WAVEFORMS RFP10P15 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 5 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029