BUZ45B Semiconductor Data Sheet 10A, 500V, 0.500 Ohm, N-Channel Power MOSFET October 1998 File Number 2259.1 Features • 10A, 500V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 0.500Ω (BUZ45 field effect transistor designed for applications such as • SOA is Power Dissipation Limited B) switching regulators, switching converters, motor drivers, /Subject relay drivers, and drivers for high power bipolar switching • Nanosecond Switching Speeds transistors requiring high speed and low gate drive power. (10A, • Linear Transfer Characteristics This type can be operated directly from integrated circuits. 500V, • High Input Impedance 0.500 Formerly developmental type TA17435. • Majority Carrier Device Ohm, NChannel Ordering Information Symbol PART NUMBER PACKAGE BRAND Power D BUZ45B TO-204AA BUZ45B MOSNOTE: When ordering, use the entire part number. FET) G /Author () S /Keywords (Harris SemiPackaging conducJEDEC TO-204AA tor, NChannel Power DRAIN MOS(FLANGE) FET, TO204AA) SOURCE (PIN 2) /Creator GATE (PIN 1) () /DOCIN FO pdfmark [ /PageMode /UseOutlines /DOCVIEW 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-800-4-HARRIS | Copyright © Harris Corporation 1998 BUZ45B TC = 25oC, Unless Otherwise Specified Absolute Maximum Ratings Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current (TC = 35oC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG DIN Humidity Category - DIN 40040 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IEC Climatic Category - DIN IEC 68-1. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL BUZ45B 500 500 10 40 ±20 125 1.0 -55 to 150 E 55/150/56 UNITS V V A A V W W/oC oC 260 oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. TC = 25oC, Unless Otherwise Specified Electrical Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 500 - - V Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 1mA (Figure 9) 2.1 3 4 V Zero Gate Voltage Drain Current TJ = 25oC, VDS = 500V, VGS = 0V TJ = 125oC, VDS = 500V, VGS = 0V - 20 250 µA - 100 1000 µA VGS = 20V, VDS = 0V - 10 100 nA rDS(ON) ID = 5A, VGS = 10V (Figure 8) - 0.49 0.50 Ω gfs VDS = 25V, ID = 5A (Figure 11) 2.7 5 - S - 50 75 ns - 80 120 ns - 330 430 ns IDSS Gate to Source Leakage Current IGSS Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time td(ON) Rise Time tr Turn-Off Delay Time VCC = 30V, ID ≈ 2.9A, VGS = 10V, RGS = 50Ω, RL = 10Ω. (Figures 14, 15) td(OFF) Fall Time tf Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VDS = 25V, VGS = 0V, f = 1MHz (Figure 10) - 110 140 ns - 3800 4900 pF - 250 400 pF - 100 170 pF Thermal Resistance Junction to Case RθJC ≤1 oC/W Thermal Resistance Junction to Ambient RθJA ≤ 35 oC/W Source to Drain Diode Specifications PARAMETER SYMBOL Continuous Source to Drain Current Pulsed Source to Drain Current ISD TEST CONDITIONS TC = 25oC ISDM Source to Drain Diode Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge QRR TJ = 25oC, ISD = 20A, VGS = 0V TJ = 25oC, ISD = 10A, dISD/dt = 100A/µs, VR = 100V MIN TYP MAX - - 10 A - - 40 A - 1.3 1.7 V - 1200 - ns - 12 - µC NOTES: 2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 2 UNITS BUZ45B Unless Otherwise Specified 1.2 12 1.0 10 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER Typical Performance Curves 0.8 0.6 0.4 8 6 4 2 0.2 0 0 25 125 50 75 100 TC , CASE TEMPERATURE (oC) 0 150 THERMAL IMPEDANCE FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE ZθJC, NORMALIZED TRANSIENT VGS ≥ 10V 0 50 100 TC, CASE TEMPERATURE (oC) 150 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 1 D= 0.5 0.2 PDM 0.1 0.1 0.05 0.02 0.01 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC 0 0.01 10-5 10-4 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) 100 101 FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 30 102 PULSE DURATION = 80µs TJ = 25oC PD = 125W 10µs 101 100µs OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 100 TJ = MAX RATED TC = 25oC 10-1 100 1ms 10ms 100ms DC 101 102 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 3 103 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 0.8µs 20V 10V 20 8.0V 7.5V VGS = 7.0V VGS = 6.5V VGS = 6.0V 10 VGS = 5.5V VGS = 5.0V 0 VGS = 4.5V VGS = 4.0V 0 10 20 30 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 5. OUTPUT CHARACTERISTICS 40 BUZ45B 15 Unless Otherwise Specified (Continued) 2.0 PULSE DURATION = 80µs VDS = 25V TJ = 25oC rDS(ON), ON-STATE RESISTANCE (Ω) IDS(ON), DRAIN TO SOURCE CURRENT (A) Typical Performance Curves 10 5 0 0 5 VGS, GATE TO SOURCE VOLTAGE (V) 0.4 50 100 0 0 150 VDS = VGS, ID = 1mA 3 2 1 0 -50 7 gfs, TRANSCONDUCTANCE (S) C, CAPACITANCE (nF) CISS 100 COSS CRSS VGS = 0, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS = CDS + CGS 10 20 30 VDS, DRAIN TO SOURCE VOLTAGE (V) 40 FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 4 0 50 100 150 FIGURE 9. GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 101 0 30 TJ, JUNCTION TEMPERATURE (oC) FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 10-2 10 20 ID, DRAIN CURRENT (A) 4 TJ, JUNCTION TEMPERATURE (oC) 10-1 7V 7.5V 8V 9V 10V 20V 0.5 VGS(TH), GATE THRESHOLD VOLTAGE (V) ON RESISTANCE (Ω) rDS(ON), DRAIN TO SOURCE 0.8 0 6.5V FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT ID = 5A VGS = 10V PULSE DURATION = 80µs -50 6V 1.0 10 1.2 0 VGS = 5V 5.5V 1.5 FIGURE 6. TRANSFER CHARACTERISTICS 1.6 PULSE DURATION = 80µs PULSE DURATION = 80µs VDS = 25V TJ = 25oC 6 5 4 3 2 1 0 0 5 10 ID, DRAIN CURRENT (A) FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT 15 BUZ45B Typical Performance Curves 15 PULSE DURATION = 80µs 101 TJ = 150oC TJ = 25oC 100 10-1 0 ID = 14.4A VGS, GATE TO SOURCE VOLTAGE (V) ISD, SOURCE TO DRAIN CURRENT (A) 102 Unless Otherwise Specified (Continued) 0.5 1.0 1.5 VSD, SOURCE TO DRAIN VOLTAGE (V) VDS = 100V 10 VDS = 400V 5 0 2.0 0 20 40 60 80 100 120 Qg(TOT), TOTAL GATE CHARGE (nC) FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE Test Circuits and Waveforms tON tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% + RG - VDD 10% 10% 0 DUT 90% VGS VGS 0 FIGURE 14. SWITCHING TIME TEST CIRCUIT 0.2µF 50% PULSE WIDTH 10% FIGURE 15. RESISTIVE SWITCHING WAVEFORMS VDS (ISOLATED SUPPLY) CURRENT REGULATOR 12V BATTERY 50% VDD Qg(TOT) SAME TYPE AS DUT 50kΩ Qgd 0.3µF VGS Qgs D VDS DUT G 0 Ig(REF) S 0 IG CURRENT SAMPLING RESISTOR VDS ID CURRENT SAMPLING RESISTOR FIGURE 16. GATE CHARGE TEST CIRCUIT 5 Ig(REF) 0 FIGURE 17. GATE CHARGE WAVEFORMS