Composite Transistors XP01507 (XP1507) Silicon NPN epitaxial planar type Unit: mm (0.425) For high breakdown voltage and low-noise amplification 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package (Emitter-coupled transistors) • Reduction of the mounting area and assembly cost by one half 0.2±0.1 1.25±0.10 2.1±0.1 ■ Features 1 3 2 (0.65) (0.65) 1.3±0.1 2.0±0.1 ■ Basic Part Number Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 150 V Collector-emitter voltage (Base open) VCEO 150 V Emitter-base voltage (Collector open) VCBO 5 V Collector current IC 50 mA Peak collector current ICP 100 mA Total power dissipation PT 150 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0 to 0.1 0.9±0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.9+0.2 –0.1 10˚ • 2SC2631 × 2 1: Base (Tr1) 2: Emitter 3: Base (Tr2) EIAJ: SC-88A 4: Collector (Tr2) 5: Collector (Tr1) SMini5-G1 Package Marking Symbol: 4O Internal Connection 5 4 Tr1 Tr2 1 2 3 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-emitter voltage (Base open) VCEO IC = 100 µA, IB = 0 150 Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 5 Collector-base cutoff current (Emitter open) ICBO VCB = 100 V, IE = 0 hFE VCE = 5 V, IC = 10 mA 90 hFE(Small/ VCE = 5 V, IC = 10 mA 0.50 Forward current transfer ratio hFE ratio * Conditions Min Typ Max Unit V V 1 µA 450 0.99 Large) Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) VCE(sat) fT Cob IC = 30 mA, IB = 3 mA 1 V VCB = 10 V, IE = −10 mA, f = 200 MHz 150 MHz VCB = 10 V, IE = 0, f = 1 MHz 2.3 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Ratio between 2 elements Note) The part number in the parenthesis shows conventional part number. Publication date: February 2004 SJJ00148BED 1 XP01507 PT Ta IC VCE 100 50 IB = 2.0 mA 1.8 mA 1.6 mA 1.4 mA 1.2 mA 1.0 mA 0.8 mA 0.6 mA 80 60 0.4 mA 40 0.2 mA 20 0 40 80 120 160 0 2 1 0.1 Ta = 75°C −25°C 0.01 0.1 1 10 100 8 Collector output capacitance C (pF) (Common base, input open circuited) ob 0 0.4 0.8 1.2 Ta = 75°C 300 25°C 200 1.6 2.0 Base-emitter voltage VBE (V) fT I E 400 – 25°C VCB = 10 V Ta = 25°C 160 120 80 40 100 0 0.1 1 4 3 2 1 100 Collector-base voltage VCB (V) 2 0 12 (V) 500 f = 1 MHz IE = 0 Ta = 25°C 10 40 VCE = 10 V Cob VCB 1 60 200 5 0 10 10 Collector current IC (mA) Collector current IC (mA) −25°C 80 hFE IC 10 25°C 6 600 IC / IB = 10 Forward current transfer ratio hFE Collector-emitter saturation voltage VCE(sat) (V) VCE(sat) IC 100 4 Collector-emitter voltage VCE Ambient temperature Ta (°C) Ta = 75°C 20 Transition frequency fT (MHz) 0 VCE = 10 V 25°C 100 Collector current IC (mA) Collector current IC (mA) Total power dissipation PT (mW) 150 120 Ta = 25°C 100 200 0 IC VBE 120 250 SJJ00148BED 100 0 −1 −10 Emitter current IE (mA) −100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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