Composite Transistors XP02401 (XP2401) Silicon PNP epitaxial planar type Unit: mm (0.425) For general amplification 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package (Base-coupled transistors) • Reduction of the mounting area and assembly cost by one half 0.2±0.1 1.25±0.10 2.1±0.1 ■ Features 1 3 2 (0.65) (0.65) 1.3±0.1 2.0±0.1 ■ Basic Part Number 0.9±0.1 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) VCBO VCEO VEBO −60 −50 −7 V V V Collector current IC −100 mA Peak collector current ICP −200 mA Total power dissipation PT 150 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0 to 0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.9+0.2 –0.1 10˚ • 2SB0709A (2SB709A) × 2 1: Emitter (Tr1) 2: Base 3: Emitter (Tr2) EIAJ: SC-88A 4: Collector (Tr2) 5: Collector (Tr1) SMini5-G1 Package Marking Symbol: 7R Internal Connection 5 4 Tr1 1 Tr2 2 3 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −60 Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −50 V Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −7 V Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0 − 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = −10 V, IB = 0 −100 µA hFE VCE = −10 V, IC = −2 mA 160 460 hFE(Small/ VCE = −10 V, IC = −2 mA 0.50 Forward current transfer ratio hFE ratio * Conditions Min Typ Max Unit V 0.99 Large) Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) VCE(sat) fT Cob IC = −100 mA, IB = −10 mA − 0.3 − 0.5 V VCB = −10 V, IE = 1 mA, f = 200 MHz 80 MHz VCB = −10 V, IE = 0, f = 1 MHz 2.7 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Ratio between 2 elements Note) The part number in the parenthesis shows conventional part number. Publication date: February 2004 SJJ00155BED 1 XP02401 PT Ta IC VCE −250 µA −40 −200 µA −30 −150 µA −20 50 −100 µA −10 0 40 80 120 160 −4 0 −8 −240 25°C Collector current IC (mA) Base current IB (µA) Ta = 75°C −25°C −160 −250 −200 −150 −100 −80 −0.4 −0.8 −1.2 0 −1.6 0 Base-emitter voltage VBE (V) −0.4 −0.8 140 400 300 Transition frequency fT (MHz) 500 Ta = 75°C 25°C −25°C 200 100 −1.2 −1.6 −2.0 −10 −102 Collector current IC (mA) 2 −103 Ta = 75°C 25°C −25°C −10−3 −1 120 100 80 60 40 1 10 Emitter current IE (mA) SJJ00155BED −102 −103 Cob VCB VCB = −10 V Ta = 25°C 0 10−1 −10 Collector current IC (mA) 20 0 −1 −400 IC / IB = 10 −1 fT I E 160 VCE = –10 V −300 −10 Base-emitter voltage VBE (V) hFE IC 600 −200 Base current IB (µA) −10−2 −40 −50 −100 −10−1 −120 0 0 VCE(sat) IC VCE = −5 V −200 −300 0 0 (V) IC VBE VCE = −5 V Ta = 25°C −350 −20 −16 Collector-emitter voltage VCE IB VBE −400 −12 −30 Collector-emitter saturation voltage VCE(sat) (V) 0 −40 −10 −50 µA Ambient temperature Ta (°C) Forward current transfer ratio hFE −50 Collector current IC (mA) Collector current IC (mA) 100 VCE = −5 V Ta = 25°C IB = − 300 µA Collector output capacitance C (pF) (Common base, input open circuited) ob Total power dissipation PT (mW) 150 −60 Ta = 25°C −50 200 0 IC I B −60 250 102 8 f = 1 MHz IE = 0 Ta = 25°C 7 6 5 4 3 2 1 0 −1 −10 −102 Collector-base voltage VCB (V) XP02401 NF IE NF IE 4 3 2 VCE = −5 V f = 270 Hz Ta = 25°C 16 Noise figure NF (dB) Noise figure NF (dB) VCB = −5 V R = 50 kΩ 18 T g = 25°C a VCB = −5 V f = 1 kHz Rg = 2 kΩ Ta = 25°C 5 h parameter IE 20 hfe 102 14 12 h parameter 6 f = 100 Hz 10 8 1 kHz hoe (µS) 10 10 kHz 6 hie (kΩ) 4 1 2 0 10−2 10−1 1 10 0 10−1 1 Emitter current IE (mA) Emitter current IE (mA) 10 1 10−1 hre (× 10−4) 1 10 Emitter current IE (mA) h parameter VCE hfe IE = 2 mA f = 270 Hz Ta = 25°C h parameter 102 hoe (µS) 10 hre (× 10−4) hie (kΩ) 1 −1 −10 Collector-emitter voltage VCE −102 (V) SJJ00155BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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