PANASONIC XP02401|XP2401

Composite Transistors
XP02401 (XP2401)
Silicon PNP epitaxial planar type
Unit: mm
(0.425)
For general amplification
0.20±0.05
5
0.12+0.05
–0.02
4
5˚
• Two elements incorporated into one package
(Base-coupled transistors)
• Reduction of the mounting area and assembly cost by one half
0.2±0.1
1.25±0.10
2.1±0.1
■ Features
1
3
2
(0.65) (0.65)
1.3±0.1
2.0±0.1
■ Basic Part Number
0.9±0.1
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
VCBO
VCEO
VEBO
−60
−50
−7
V
V
V
Collector current
IC
−100
mA
Peak collector current
ICP
−200
mA
Total power dissipation
PT
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
0 to 0.1
■ Absolute Maximum Ratings Ta = 25°C
0.9+0.2
–0.1
10˚
• 2SB0709A (2SB709A) × 2
1: Emitter (Tr1)
2: Base
3: Emitter (Tr2)
EIAJ: SC-88A
4: Collector (Tr2)
5: Collector (Tr1)
SMini5-G1 Package
Marking Symbol: 7R
Internal Connection
5
4
Tr1
1
Tr2
2
3
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Collector-base voltage (Emitter open)
VCBO
IC = −10 µA, IE = 0
−60
Collector-emitter voltage (Base open)
VCEO
IC = −2 mA, IB = 0
−50
V
Emitter-base voltage (Collector open)
VEBO
IE = −10 µA, IC = 0
−7
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = −20 V, IE = 0
− 0.1
µA
Collector-emitter cutoff current (Base open)
ICEO
VCE = −10 V, IB = 0
−100
µA
hFE
VCE = −10 V, IC = −2 mA
160
460

hFE(Small/
VCE = −10 V, IC = −2 mA
0.50
Forward current transfer ratio
hFE ratio *
Conditions
Min
Typ
Max
Unit
V

0.99
Large)
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
VCE(sat)
fT
Cob
IC = −100 mA, IB = −10 mA
− 0.3
− 0.5
V
VCB = −10 V, IE = 1 mA, f = 200 MHz
80
MHz
VCB = −10 V, IE = 0, f = 1 MHz
2.7
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Ratio between 2 elements
Note) The part number in the parenthesis shows conventional part number.
Publication date: February 2004
SJJ00155BED
1
XP02401
PT  Ta
IC  VCE
−250 µA
−40
−200 µA
−30
−150 µA
−20
50
−100 µA
−10
0
40
80
120
160
−4
0
−8
−240
25°C
Collector current IC (mA)
Base current IB (µA)
Ta = 75°C
−25°C
−160
−250
−200
−150
−100
−80
−0.4
−0.8
−1.2
0
−1.6
0
Base-emitter voltage VBE (V)
−0.4
−0.8
140
400
300
Transition frequency fT (MHz)
500
Ta = 75°C
25°C
−25°C
200
100
−1.2
−1.6
−2.0
−10
−102
Collector current IC (mA)
2
−103
Ta = 75°C
25°C
−25°C
−10−3
−1
120
100
80
60
40
1
10
Emitter current IE (mA)
SJJ00155BED
−102
−103
Cob  VCB
VCB = −10 V
Ta = 25°C
0
10−1
−10
Collector current IC (mA)
20
0
−1
−400
IC / IB = 10
−1
fT  I E
160
VCE = –10 V
−300
−10
Base-emitter voltage VBE (V)
hFE  IC
600
−200
Base current IB (µA)
−10−2
−40
−50
−100
−10−1
−120
0
0
VCE(sat)  IC
VCE = −5 V
−200
−300
0
0
(V)
IC  VBE
VCE = −5 V
Ta = 25°C
−350
−20
−16
Collector-emitter voltage VCE
IB  VBE
−400
−12
−30
Collector-emitter saturation voltage VCE(sat) (V)
0
−40
−10
−50 µA
Ambient temperature Ta (°C)
Forward current transfer ratio hFE
−50
Collector current IC (mA)
Collector current IC (mA)
100
VCE = −5 V
Ta = 25°C
IB = − 300 µA
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
Total power dissipation PT (mW)
150
−60
Ta = 25°C
−50
200
0
IC  I B
−60
250
102
8
f = 1 MHz
IE = 0
Ta = 25°C
7
6
5
4
3
2
1
0
−1
−10
−102
Collector-base voltage VCB (V)
XP02401
NF  IE
NF  IE
4
3
2
VCE = −5 V
f = 270 Hz
Ta = 25°C
16
Noise figure NF (dB)
Noise figure NF (dB)
VCB = −5 V
R = 50 kΩ
18 T g = 25°C
a
VCB = −5 V
f = 1 kHz
Rg = 2 kΩ
Ta = 25°C
5
h parameter  IE
20
hfe
102
14
12
h parameter
6
f = 100 Hz
10
8
1 kHz
hoe (µS)
10
10 kHz
6
hie (kΩ)
4
1
2
0
10−2
10−1
1
10
0
10−1
1
Emitter current IE (mA)
Emitter current IE (mA)
10
1
10−1
hre (× 10−4)
1
10
Emitter current IE (mA)
h parameter  VCE
hfe
IE = 2 mA
f = 270 Hz
Ta = 25°C
h parameter
102
hoe (µS)
10
hre (× 10−4)
hie (kΩ)
1
−1
−10
Collector-emitter voltage VCE
−102
(V)
SJJ00155BED
3
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
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applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
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and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
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2003 SEP