Composite Transistors XN01504 (XN1504) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 5 1.50+0.25 –0.05 • Two elements incorporated into one package (Emitter-coupled transistors) • Reduction of the mounting area and assembly cost by one half 2 0.4±0.2 4 2.8+0.2 –0.3 3 ■ Features 5˚ For amplification of low-frequency output 0.16+0.10 –0.06 1 (0.65) 0.30+0.10 –0.05 1.1+0.2 –0.1 • 2SD1915F × 2 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 20 V Emitter-base voltage (Collector open) VEBO 25 V Collector current IC 300 mA Peak collector current ICP 500 mA Total power dissipation PT 300 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0 to 0.1 ■ Absolute Maximum Ratings Ta = 25°C 1.1+0.3 –0.1 10˚ ■ Basic Part Number 1: Collector (Tr1) 2: Collector (Tr2) 3: Base (Tr2) EIAJ: SC-74A 4: Emitter 5: Base (Tr1) Mini5-G1 Package Marking Symbol: 5S Internal Connection 3 ■ Electrical Characteristics Ta = 25°C ± 3°C 5 Tr2 Tr1 2 1 Parameter Symbol Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 Base-emitter voltage VBE VCE = 2 V, IC = 4 mA Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0 0.1 µA Emitter-base cutoff current (Collector open) IEBO VEB = 25 V, IC = 0 0.1 µA hFE VCE = 2 V, IC = 4 mA 500 2 500 hFE(Small VCE = 2 V, IC = 4 mA 0.50 Forward current transfer ratio hFE ratio *1 Conditions 4 Min Typ Max 20 Unit V 0.6 V 0.99 /Large) Collector-emitter saturation voltage Transition frequency VCE(sat) fT Collector output capacitance (Common base, input open circuited) Cob ON resistanse *2 Ron IC = 30 mA, IB = 3 mA 0.1 VCB = 6 V, IE = −4 mA, f = 200 MHz 80 VCB = 10 V, IE = 0, f = 1 MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Ratio between 2 elements *2: Ron start resistance test circuit MHz 7 1.0 V pF Ω 1 kΩ IB = 5 mA f = 1 kHz V = 0.3 V VB VV Ron = VA VB × 1 000 (Ω) VA − VB Note) The part number in the parenthesis shows conventional part number. Publication date: February 2004 SJJ00029BED 1 XN01504 PT Ta IC VCE 24 Ta = 25°C 200 100 0 40 80 120 IB = 10 µA 16 8 µA 12 8 4 µA 4 2 µA 0 160 6 µA Ambient temperature Ta (°C) 2 4 2 000 20 10 12 0.1 Ta = 75°C 25°C −25°C 10 100 Ta = 75°C Collector current IC (mA) −25°C 800 400 1 Collector output capacitance C (pF) (Common base, input open circuited) ob f = 1 MHz Ta = 25°C 16 12 8 4 0 1 10 10 Collector current IC (mA) Cob VCB 20 100 Collector-base voltage VCB (V) SJJ00029BED 0.4 0.6 0.8 1.0 fT I E 25°C 0 0.1 0.2 200 1 200 1 0 Base-emitter voltage VBE (V) VCE = 2 V 1 600 1 0.01 40 hFE IC IC / IB = 10 0.001 0.1 2 8 −25°C 60 Collector-emitter voltage VCE (V) Forward current transfer ratio hFE Collector-emitter saturation voltage VCE(sat) (V) 6 Ta = 75°C 80 0 0 VCE(sat) IC 10 Collector current IC (mA) Collector current IC (mA) 300 VCE = 2 V 25°C 100 20 400 0 IC VBE 120 Transition frequency fT (MHz) Total power dissipation PT (mW) 500 100 VCB = 6 V Ta = 25°C 160 120 80 40 0 − 0.1 −1 −10 Emitter current IE (mA) −100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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