Silicon Junction FETs (Small Signal) 2SK2380 Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor unit: mm 1.6±0.15 0.4 0.8±0.1 0.4 Ratings Unit VGDO −40 V Gate to Source voltage VGSO −40 V Drain current ID ±1 mA Gate current IG 10 mA Allowable power dissipation PD 125 mW Channel temperature Tch 125 °C Tstg −55 to +125 °C Storage temperature +0.1 0.5 1.0±0.1 1.6±0.1 0.5 +0.1 0.15–0.05 Symbol 0 to 0.1 Parameter Gate to Drain voltage 3 0.45±0.1 0.3 ■ Absolute Maximum Ratings (Ta = 25°C) 1 2 0.75±0.15 ● Low gate to source leakage current, IGSS ● Small capacitance of Ciss, Coss, Crss ● SS-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 0.2–0.05 ■ Features 1: Source 2: Drain 3: Gate 0.2±0.1 EIAJ: SC-75 SS-Mini Type Package (3-pin) Marking Symbol (Example): EB ■ Electrical Characteristics (Ta = 25°C) Parameter Symbol Drain to Source cut-off current IDSS * Conditions Gate to Source leakage current IGSS VGS = −20V, VDS = 0 Gate to Drain voltage VDS IG = −10µA, VDS = 0 Gate to Source cut-off voltage VGSC VDS = 10V, ID = 1µA Forward transfer admittance | Yfs | VDS = 10V, VGS = 0, f = 1kHz VDS = 10V, VGS = 0 Input capacitance (Common Source) Ciss Output capacitance (Common Source) Coss VDS = 10V, VGS = 0, f = 1MHz Reverse transfer capacitance (Common Source) Crss * min typ 50 max Unit 200 µA − 0.5 nA −40 V −1.3 0.05 −3 V mS 1 pF 0.4 pF 0.4 pF IDSS rank classification Runk Q R S IDSS (mA) 50 to 100 70 to 130 100 to 200 Marking Symbol EBQ EBR EBS 1 Silicon Junction FETs (Small Signal) PD Ta ID VDS 240 VDS=10V Ta=25˚C 200 100 75 50 25 200 VGS=0.4V 160 0.2V 120 0V – 0.2V 80 – 0.4V Drain current ID (µA) 125 – 0.6V 40 160 120 80 40 25˚C Ta=75˚C 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 0.6 IDSS=100µA 0.2 0 –1.2 10 VDS=10V Ta=25˚C 200 160 IDSS=100µA 120 – 0.4 0 0.4 80 40 Gate to source voltage VGS (V) 0 40 80 120 160 –25˚C – 0.8 – 0.4 0 0.4 Gate to source voltage VGS (V) Ciss, Coss, Crss VDS 0 – 0.8 0 –1.2 12 240 Forward transfer admittance |Yfs| (mS) 0.8 0.4 8 | Yfs | ID VDS=10V f=1kHz Ta=25˚C 1.0 6 Drain to source voltage VDS (V) | Yfs | VGS 1.2 4 200 Drain current ID (µA) 240 Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 0 Forward transfer admittance |Yfs| (mS) ID VGS 240 Drain current ID (µA) Allowable power dissipation PD (mW) 150 2 2SK2380 1.2 VGS=0V Ta=25˚C f=1MHz 1.0 Ciss 0.8 0.6 0.4 Crss Coss 0.2 0 0 2 4 6 8 10 12 Drain to source voltage VDS (V)