Transistors 2SB0819 (2SB819) Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1051 Unit: mm 4.1±0.2 2.0±0.2 2.4±0.2 (0.85) 0.45±0.05 Parameter Symbol Rating Unit VCBO −50 V Collector-emitter voltage (Base open) VCEO −40 V VEBO −5 V Collector current IC −1.5 A Peak collector current ICP −3 A 3 2 (2.5) PC 1 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 1.25±0.05 0.55±0.1 Collector-base voltage (Emitter open) Collector power dissipation 4.5±0.1 R 0.9 R 0.7 ■ Absolute Maximum Ratings Ta = 25°C * (1.0) (1.5) 1.0±0.1 • High collector-emitter voltage (Base open) VCEO • Large collctor power dissipation PC • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. (1.0) (1.5) 3.5±0.1 (0.4) 6.9±0.1 ■ Features Emitter-base voltage (Collector open) 2.5±0.1 1 1: Base 2: Collector 3: Emitter M-A1 Package (2.5) cm2 Note) *: Print circuit board: Copper foil area of 1 or more, and the board thickness of 1.7 mm for the collector portion ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = −1 mA, IE = 0 −50 V Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −40 V Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0 −1 µA Collector-emitter cutoff current (Base open) ICEO VCE = −10 V, IB = 0 −100 µA Emitter-base cutoff current (Collector open) IEBO VEB = −5 V, IC = 0 −10 µA Forward current transfer ratio *1, 2 hFE VCE = −5 V, IC = −1 A 220 −1 V −1.5 V Collector-emitter saturation voltage *1 Base-emitter saturation voltage *1 Transition frequency VCE(sat) IC = −1.5 A, IB = − 0.15 A VBE(sat) IC = −2 A, IB = − 0.2 A fT Collector output capacitance (Common base, input open circuited) Conditions Cob Min Typ 80 Max Unit VCB = −5 V, IE = 0.5 A, f = 200 MHz 150 MHz VCB = −20 V, IE = 0, f = 1 MHz 45 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank Q R hFE 80 to 160 120 to 220 Note) The part number in the parenthesis shows conventional part number. Publication date: November 2002 SJC00059BED 1 2SB0819 1.0 IB = −40 mA −3.5 Collector current IC (A) −35 mA 0.8 0.6 0.4 0.2 0 −3.0 −30 mA −2.5 −25 mA −2.0 −20 mA −1.5 −15 mA −10 mA −1.0 −5 mA − 0.5 0 20 40 60 0 80 100 120 140 160 Ambient temperature Ta (°C) −2 0 −4 Forward current transfer ratio hFE Base-emitter saturation voltage VBE(sat) (V) Ta = −25°C 75°C − 0.1 − 0.01 − 0.01 − 0.1 −1 400 300 Ta = 75°C 25°C −25°C 200 100 0 − 0.01 −10 − 0.1 −1 −25°C − 0.01 − 0.01 − 0.1 90 60 30 −100 Collector-base voltage VCB (V) −10 240 VCB = −5 V Ta = 25°C 200 160 120 80 40 0 0.01 −10 0.1 1 10 Emitter current IE (A) ICEO Ta Ta = 25°C 1 000 VCE = −12 V −50 −40 ICEO (Ta) ICEO (Ta = 25°C) 120 −1 Collector current IC (A) VCER RBE −60 Collector-emitter voltage (V) (Resistor between B and E) VCER Collector output capacitance C (pF) (Common base, input open circuited) ob Ta = 75°C 25°C Collector current IC (A) IE = 0 f = 1 MHz Ta = 25°C −10 −1 fT I E 500 Cob VCB 0 −1 −10 − 0.1 VCE = −5 V Collector current IC (A) 150 −10 IC / IB = 10 hFE IC −10 −1 −8 600 IC / IB = 10 25°C −6 −100 Collector-emitter voltage VCE (V) VBE(sat) IC −100 2 VCE(sat) IC Ta = 25°C Transition frequency fT (MHz) Collector power dissipation PC (W) IC VCE −4.0 Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness Collector-emitter saturation voltage VCE(sat) (V) PC Ta 1.2 −30 −20 100 10 −10 0 0.001 1 0.01 0.1 1 10 Base-emitter resistance RBE (kΩ) SJC00059BED 0 20 40 60 80 100 Ambient temperature Ta (°C) 120 2SB0819 Safe operation area −10 Single pulse Ta = 25°C ICP Collector current IC (A) IC t = 10 ms −1 t=1s − 0.1 − 0.01 − 0.001 − 0.1 −1 −10 −100 Collector-emitter voltage VCE (V) SJC00059BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL