Transistors 2SD0966 (2SD966) Silicon NPN epitaxial planar type For low-frequency amplification For stroboscope Unit: mm 4.9±0.2 8.6±0.2 5.9±0.2 ■ Features 0.7+0.3 –0.2 0.7±0.1 13.5±0.5 • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the lowvoltage power supply. ■ Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit VCBO 40 V Collector-emitter voltage (Base open) VCEO 20 V Emitter-base voltage (Collector open) VEBO 7 V Collector current IC 5 A Peak collector current ICP 8 A Collector power dissipation PC 1 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.45+0.2 –0.1 0.45+0.2 –0.1 (1.27) (1.27) 1 2 3 (3.2) Parameter Collector-base voltage (Emitter open) 2.54±0.15 1 : Emitter 2 : Collector 3 : Base EIAJ : SC-51 TO-92L-A1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 20 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 7 V Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0 0.1 µA Emitter-base cutoff current (Collector open) IEBO VEB = 7 V, IC = 0 0.1 µA 600 Forward current transfer ratio *1 Collector-emitter saturation voltage *1 Transition frequency hFE1 *2 Min VCE = 2 V, IC = 0.5 A 180 hFE VCE = 2 V, IC = 2 A 150 VCE(sat) IC = 3 A, IB = 0.1 A VCB = 6 V, IE = −50 mA, f = 200 MHz fT Collector output capacitance (Common base, input open circuited) Conditions VCB = 20 V, IE = 0, f = 1 MHz Cob Typ Max 1 150 Unit V MHz 50 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank P Q R hFE1 180 to 270 230 to 380 340 to 600 Note) The part number in the parenthesis shows conventional part number. Publication date: April 2003 SJC00201BED 1 2SD0966 PC Ta IC VCE Ta = 25°C 0.4 5 mA 4 mA 1.2 3 mA 0.8 2 mA 0.4 0.2 0 40 80 120 0 160 −25°C 0.1 0.01 0.001 0.01 0.1 1 10 Collector current IC (A) 1.2 1.6 25°C −25°C 200 100 0 0.01 0.1 Collector output capacitance C (pF) (Common base, input open circuited) ob 20 100 Collector current VCB (V) 2 1 Collector current IC (A) 40 SJC00201BED 0.4 0.8 1.2 1.6 2.0 Base-emitter voltage VBE (V) fT I E Ta = 75°C 300 60 10 0 400 400 IE = 0 f = 1 MHz Ta = 25°C 1 2 2.4 500 80 0 2.0 VCE = 2 V Cob VCB 100 3 hFE IC Ta = 75°C 25°C 0.8 600 IC / IB = 30 Forward current transfer ratio hFE Collector-emitter saturation voltage VCE(sat) (V) VCE(sat) IC 1 4 0 0.4 −25°C 1 1 mA 0 25°C Ta = 75°C Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) 10 Collector current IC (A) Collector current IC (A) 0.6 1.6 VCE = 2 V 5 6 mA Transition frequency fT (MHz) Collector power dissipation PC (W) 0.8 6 IB = 7 mA 2.0 1.0 0 IC VBE 2.4 1.2 10 VCB = 6 V Ta = 25°C 300 200 100 0 − 0.01 − 0.1 −1 Emitter current IE (A) −10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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