Transistors 2SB0774 (2SB774) Silicon PNP epitaxial planar type For low-frequency amplification Unit: mm 5.0±0.2 4.0±0.2 5.1±0.2 ■ Features 0.7±0.2 • High emitter-base voltage (Collector open) VEBO • Protective diodes and resistances between emitter and base can be omitted. 12.9±0.5 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −30 V Collector-emitter voltage (Base open) VCEO −25 V Emitter-base voltage (Collector open) VEBO −15 V Collector current IC −100 mA Peak collector current ICP −200 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.45+0.15 –0.1 0.45+0.15 –0.1 2.5+0.6 –0.2 2.5+0.6 –0.2 1 2 3 2.3±0.2 Parameter 1: Emitter 2: Collector 3: Base EIAJ: SC-43A TO-92-B1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −30 V Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −25 V Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −15 Collector-base cutoff current (Emitter open) ICBO VCB = −10 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = −20 V, IB = 0 Forward current transfer ratio hFE1 * VCE = −10 V, IC = −2 mA 210 hFE2 VCE = −2 V, IC = −100 mA 90 Collector-emitter saturation voltage VCE(sat) IC = −100 mA, IB = −10 mA Transition frequency VCB = −10 V, IE = 2 mA, f = 200 MHz fT Collector output capacitance (Common-emitter reverse transfer) Conditions VCB = −10 V, IE = 0, f = 1 MHz Cob Min Typ Max Unit V −1 µA −100 µA 460 − 0.5 V 150 MHz 4 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank R S hFE1 210 to 340 290 to 460 Note) The part number in the parenthesis shows conventional part number. Publication date: March 2003 SJC00053BED 1 2SB0774 IC VCE −240 Collector power dissipation PC (mW) Ta = 25°C Collector current IC (mA) −1.2 mA −160 300 −1.0 mA − 0.8 mA − 0.6 mA −120 200 100 − 0.4 mA −80 − 0.2 mA 40 80 120 0 160 Ambient temperature Ta (°C) −2 0 Forward current transfer ratio hFE −1 Ta = 75°C 25°C −25°C −1 −10 −8 −100 Collector output capacitance C (pF) (Common base, input open circuited) ob −40 500 400 Ta = 75°C 25°C 300 −25°C 200 100 0 − 0.1 −1 −10 IE = 0 f = 1 MHz Ta = 25°C 8 6 4 2 0 −1 −10 0 −12 VCE = −10 V Cob VCB 10 −25°C 0 − 0.4 − 0.8 −100 Collector-base voltage VCB (V) SJC00053BED −1.2 −1.6 −2.0 Base-emitter voltage VBE (V) fT I E Collector current IC (mA) Collector current IC (mA) 12 −10 −80 hFE IC −10 − 0.01 − 0.1 −6 600 IC / IB = 10 − 0.1 −4 25°C Ta = 75°C Collector-emitter voltage VCE (V) VCE(sat) IC −100 2 −120 −40 0 VCE = −10 V −160 1 000 Transition frequency fT (MHz) 0 Collector-emitter saturation voltage VCE(sat) (V) IB = −1.8 mA −1.6 mA −1.4 mA −200 400 IC VBE −200 Collector current IC (mA) PC Ta 500 −100 VCB = −10 V Ta = 25°C 100 10 0.1 1 10 Emitter current IE (mA) 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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