Transistors 2SA0720A (2SA720A) Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SC1318A Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 0.7±0.1 12.9±0.5 • High collector-emitter voltage (Base open) VCEO • Optimum for the driver stage of a low-frequency and 25 W to 30 W output amplifier 0.7±0.2 ■ Features ■ Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit VCBO −80 V Collector-emitter voltage (Base open) VCEO −70 V Emitter-base voltage (Collector open) VEBO −5 V Collector current IC − 0.5 A Peak collector current ICP −1 A Collector power dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.45+0.15 –0.1 0.45+0.15 –0.1 2.5+0.6 –0.2 2.5+0.6 –0.2 1 2 3 2.3±0.2 Parameter Collector-base voltage (Emitter open) 1: Emitter 2: Collector 3: Base EIAJ: SC-43A TO-92-B1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = −10 µA, IE = 0 −80 V Collector-emitter voltage (Base open) VCEO IC = −2 mA, IB = 0 −70 V Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −5 Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0 Forward current transfer ratio *1 Collector-emitter saturation voltage *1 Base-emitter saturation voltage *1 Transition frequency Min Typ Max Unit V − 0.1 µA 240 hFE1 *2 VCE = −10 V, IC = −150 mA 85 hFE2 VCE = −10 V, IC = −500 mA 40 VCE(sat) IC = −300 mA, IB = −30 mA − 0.2 − 0.6 V VBE(sat) IC = −300 mA, IB = −30 mA − 0.85 −1.50 V fT Collector output capacitance (Common base, input open circuited) Conditions Cob VCB = −10 V, IE = 50 mA, f = 200 MHz 120 VCB = −10 V, IE = 0, f = 1 MHz 20 MHz 30 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurment *2: Rank classification Rank Q R hFE1 85 to 170 120 to 240 Note) The part number in the parenthesis shows conventional part number. Publication date: March 2003 SJC00003BED 1 2SA0720A PC Ta IC VCE − 0.6 −4 mA −3 mA − 0.4 200 −2 mA − 0.2 40 80 120 0 160 −2 0 Ta = 75°C 25°C −25°C −8 −100 −1 000 −2 −1 Ta = −25°C 75°C − 0.01 −1 −10 −100 80 40 Emitter current IE (mA) 100 −8 250 Ta = 75°C 200 25°C 150 −25°C 100 50 −10 −100 −1 000 Collector current IC (mA) ICEO Ta 104 IE = 0 f = 1 MHz Ta = 25°C VCB = −20 V 40 103 30 20 102 10 10 0 −1 −10 −100 Collector-base voltage VCB (V) SJC00003BED −10 VCE = −10 V 0 −1 −1 000 ICBO (Ta) ICBO (Ta = 25°C) 120 Collector output capacitance C (pF) (Common base, input open circuited) ob 160 50 −6 hFE IC Cob VCB 10 −4 300 Collector current IC (mA) VCB = −10 V Ta = 25°C 1 0 Base current IB (mA) IC / IB = 10 25°C fT I E 200 0 −10 −10 Collector current IC (mA) Transition frequency fT (MHz) −6 − 0.1 − 0.01 0 −4 −100 Base-emitter saturation voltage VBE(sat) (V) Collector-emitter saturation voltage VCE(sat) (V) −1 −10 − 0.2 VBE(sat) IC IC / IB = 10 − 0.001 −1 − 0.4 −1 mA VCE(sat) IC − 0.1 − 0.6 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) −10 − 0.8 Forward current transfer ratio hFE 0 Collector current IC (A) −6 mA −5 mA VCE = −10 V Ta = 25°C −1.0 −9 mA −8 mA −7 mA Collector current IC (A) Collector power dissipation PC (mW) IB = −10 mA − 0.8 400 −1.2 Ta = 25°C −1.0 600 0 2 IC I B −1.2 800 1 0 40 80 120 160 Ambient temperature Ta (°C) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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