Transistors 2SB0873 (2SB873) Silicon PNP epitaxial planar type For low-frequency power amplification For DC-DC converter For stroboscope Unit: mm 4.9±0.2 8.6±0.2 5.9±0.2 ■ Features 13.5±0.5 0.7+0.3 –0.2 0.7±0.1 • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC ■ Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −30 V Collector-emitter voltage (Base open) VCEO −20 V VEBO −7 V Collector current IC −5 A Peak collector current ICP −10 A Collector power dissipation PC 1 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Emitter-base voltage (Collector open) 0.45+0.2 –0.1 0.45+0.2 –0.1 (1.27) (1.27) 1 2 3 (3.2) Parameter 2.54±0.15 1: Emitter 2: Collector 3: Base EIAJ: SC-51 TO-92L-A1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-emitter voltage (Base open) VCEO IC = −1 mA, IB = 0 −20 Emitter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −7 Collector-base cutoff current (Emitter open) ICBO VCB = −10 V, IE = 0 Emitter-base cutoff current (Collector open) IEBO VEB = −5 V, IC = 0 Forward current transfer ratio *1, 2 hFE VCE = −2 V, IC = −2 A VCE(sat) IC = −3 A, IB = − 0.1 A Collector-emitter saturation voltage *1 Transition frequency VCB = −6 V, IE = 50 mA, f = 200 MHz fT Collector output capacitance (Common-emitter reverse transfer) Conditions VCB = −20 V, IE = 0, f = 1 MHz Cob Min Typ Max Unit V V 90 −100 nA −100 nA 625 −1 120 V MHz 85 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank P Q R hFE 90 to 135 120 to 205 180 to 625 Note) The part number in the parenthesis shows conventional part number. Publication date: January 2003 SJC00061BED 1 2SB0873 PC Ta IC VCE Collector current IC (A) −25 mA 0.6 0.4 −4 −20 mA −15 mA −3 −10 mA −2 −5 mA −1 0.2 0 20 40 60 0 80 100 120 140 160 Ambient temperature Ta (°C) −4 0 −12 0 − 0.4 − 0.8 −1 Ta = 75°C 25°C −25°C − 0.01 − 0.01 − 0.1 −1 500 25°C −25°C 300 200 100 0 − 0.01 −10 − 0.1 −10 VCB = −6 V Ta = 25°C IE = 0 f = 1 MHz Ta = 25°C 160 120 80 Single pulse Ta = 25°C ICP −10 IC t = 10 ms t=1s −1 − 0.1 40 0 −1 −10 −100 Collector-base voltage VCB (V) − 0.01 − 0.1 −1 −10 −100 Collector-emitter voltage VCE (V) SJC00061BED 200 160 120 80 40 0 1 10 Emitter current IE (mA) Safe operation area −100 Collector current IC (A) Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 200 −1 Collector current IC (A) Collector current IC (A) −2.0 fT I E VCE = −2 V 400 −1.6 240 Transition frequency fT (MHz) −10 −1.2 Base-emitter voltage VBE (V) Ta = 75°C Forward current transfer ratio hFE Collector-emitter saturation voltage VCE(sat) (V) −10 −4 hFE IC 600 IC / IB = 30 − 0.1 2 −8 −25°C −6 Collector-emitter voltage VCE (V) VCE(sat) IC −100 −6 Ta = 75°C −8 −2 −1 mA −2 0 VCE = −2 V 25°C −10 −30 mA Collector current IC (A) Collector power dissipation PC (W) 0.8 −12 Ta = 25°C IB = −40 mA −35 mA −5 1.0 0 IC VBE −6 1.2 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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