PMBT4401YS 40 V, 600 mA, double NPN switching transistor 2 July 2015 Product data sheet 1. General description Double NPN switching transistor in a very small SOT363 (TSSOP6) Surface-Mounted Device (SMD) plastic package. Double PNP complement: PMBT4403YS 2. Features and benefits • • • • Double general-purpose switching transistor High current (max. 600 mA) Voltage max. 40 V AEC-Q101 qualified 3. Applications • Switching and linear amplification 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 40 V IC collector current - - 600 mA 100 - 300 40 - - Per transistor Per transistor hFE DC current gain VCE = 1 V; IC = 150 mA; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C VCE = 2 V; IC = 500 mA; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C Scan or click this QR code to view the latest information for this product PMBT4401YS NXP Semiconductors 40 V, 600 mA, double NPN switching transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 E emitter TR1 2 B base TR1 3 C collector TR2 4 E emitter TR2 5 B base TR2 6 C collector TR1 Simplified outline 6 5 Graphic symbol 4 6 5 TR2 TR1 1 2 4 3 TSSOP6 (SOT363) 1 2 3 sym020 6. Ordering information Table 3. Ordering information Type number PMBT4401YS Package Name Description Version TSSOP6 plastic surface-mounted package; 6 leads SOT363 7. Marking Table 4. Marking codes Type number Marking code [1] PMBT4401YS BG% [1] PMBT4401YS Product data sheet % = placeholder for manufacturing site code All information provided in this document is subject to legal disclaimers. 2 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved 2 / 15 PMBT4401YS NXP Semiconductors 40 V, 600 mA, double NPN switching transistor 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - 60 V VCEO collector-emitter voltage open base - 40 V VEBO emitter-base voltage open collector - 6 V IC collector current - 600 mA ICM peak collector current - 800 mA IBM peak base current - 200 mA Ptot total power dissipation [1] - 250 mW [2] - 300 mW [1] - 400 mW [2] - 550 mW Per transistor single pulse; tp ≤ 1 ms Tamb ≤ 25 °C Per device Ptot total power dissipation Tamb ≤ 25 °C Tj junction temperature - 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] [2] Device mounted on an FR4 Printed-Circuit Board (PCB); single-sided copper; tin-plated and standard footprint. 2 Device mounted on an FR4 PCB; single-sided copper; tin-plated and mounting pad for collector 1 cm . aaa-017354 600 (1) Ptot (mW) (2) 400 200 0 -75 -25 (1) FR4 PCB; mounting pad for collector 1 cm (2) FR4 PCB; standard footprint Fig. 1. 25 75 125 Tj (°C) 175 2 Per device: Power derating curves SOT363 (SC-88) PMBT4401YS Product data sheet All information provided in this document is subject to legal disclaimers. 2 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved 3 / 15 PMBT4401YS NXP Semiconductors 40 V, 600 mA, double NPN switching transistor 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient in free air thermal resistance from junction to ambient in free air Min Typ Max Unit [1] - - 500 K/W [2] - - 417 K/W [1] - - 313 K/W [2] - - 227 K/W Per transistor Rth(j-a) Per device Rth(j-a) [1] [2] Device mounted on an FR4 PCB; single-sided copper; tin-plated and standard footprint. 2 Device mounted on an FR4 PCB; single-sided copper; tin-plated and mounting pad for collector 1 cm . aaa-017355 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 102 0.33 0.5 0.2 0.1 0.05 10 0.02 0.01 0 1 10-5 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 2. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMBT4401YS Product data sheet All information provided in this document is subject to legal disclaimers. 2 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved 4 / 15 PMBT4401YS NXP Semiconductors 40 V, 600 mA, double NPN switching transistor aaa-017356 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 102 0.33 0.5 0.2 0.1 0.05 10 0.02 0.01 0 1 10-5 10-4 10-3 10-2 FR4 PCB, mounting pad for collector 1 cm Fig. 3. 10-1 1 10 102 tp (s) 103 2 Per Transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMBT4401YS Product data sheet All information provided in this document is subject to legal disclaimers. 2 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved 5 / 15 PMBT4401YS NXP Semiconductors 40 V, 600 mA, double NPN switching transistor 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit collector-base cut-off current VCB = 50 V; IE = 0 A; Tamb = 25 °C - - 50 nA VCB = 50 V; IE = 0 A; Tj = 125 °C - - 10 µA IEBO emitter-base cut-off current VEB = 6 V; IC = 0 A; Tamb = 25 °C - - 50 nA hFE DC current gain VCE = 1 V; IC = 0.1 mA; Tamb = 25 °C 20 - - VCE = 1 V; IC = 1 mA; Tamb = 25 °C 40 - - VCE = 1 V; IC = 10 mA; Tamb = 25 °C 80 - - VCE = 1 V; IC = 150 mA; tp ≤ 300 µs; 100 - 300 40 - - - - 400 mV - - 750 mV base-emitter saturation IC = 150 mA; IB = 15 mA; tp ≤ 300 µs; voltage δ ≤ 0.02; Tamb = 25 °C - - 950 mV IC = 500 mA; IB = 50 mA; tp ≤ 300 µs; - - 1.2 V Per transistor ICBO δ ≤ 0.02; Tamb = 25 °C VCE = 2 V; IC = 500 mA; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C VCEsat collector-emitter saturation voltage IC = 150 mA; IB = 15 mA; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C IC = 500 mA; IB = 50 mA; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C VBEsat δ ≤ 0.02; Tamb = 25 °C td delay time IC = 150 mA; IBon = 15 mA; - - 10 ns tr rise time IBoff = -15 mA; Tamb = 25 °C - - 25 ns ton turn-on time - - 35 ns ts storage time - - 200 ns tf fall time - - 60 ns toff turn-off time - - 250 ns CC collector capacitance - - 8 pF - - 30 pF 250 - - MHz - - 4 dB VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C CE emitter capacitance VEB = 500 mV; IC = 0 A; f = 1 MHz; Tamb = 25 °C fT transition frequency VCE = 20 V; IC = 20 mA; f = 100 MHz; Tamb = 25 °C NF noise figure VCE = 5 V; IC = 100 µA; RS = 1 kΩ; f = 1 kHz PMBT4401YS Product data sheet All information provided in this document is subject to legal disclaimers. 2 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved 6 / 15 PMBT4401YS NXP Semiconductors 40 V, 600 mA, double NPN switching transistor aaa-017357 900 aaa-017359 0.9 hFE IB = 13 mA 11.7 mA 10.4 mA IC (A) 600 9.1 mA 7.8 mA 6.5 mA 0.6 5.2 mA 2.6 mA (1) 300 3.9 mA 0.3 (2) 1.3 mA (3) 0 10-1 1 10 102 IC (mA) 0.0 103 VCE = 10 V 2 4 6 8 VCE (V) 10 Tamb = 25 °C (1) Tamb = 100 °C Fig. 5. (2) Tamb = 25 °C Collector current as a function of collectoremitter voltage; typical values (3) Tamb = −55 °C Fig. 4. 0 DC current gain as a function of collector current; typical values aaa-017361 1.0 VBE (V) aaa-017362 1.2 VBEsat (V) (1) 0.8 1.0 (2) (1) 0.6 0.8 (2) (3) 0.4 0.6 (3) 0.2 0.0 10-1 Fig. 6. 0.4 1 10 102 IC (mA) 0.2 10-1 103 1 VCE = 10 V IC/IB = 10 (1) Tamb = −55 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 150 °C (3) Tamb = 150 °C Base-emitter voltage as a function of collector current; typical values PMBT4401YS Product data sheet Fig. 7. 102 IC (mA) 103 Base-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 2 July 2015 10 © NXP Semiconductors N.V. 2015. All rights reserved 7 / 15 PMBT4401YS NXP Semiconductors 40 V, 600 mA, double NPN switching transistor aaa-017363 1 VCEsat (V) aaa-017364 1 VCEsat (V) (1) (1) 10-1 10-1 (3) 10-2 10-1 Fig. 8. (2) (2) 1 10 102 IC (mA) 10-2 10-1 103 (3) 1 IC/IB = 20 Tamb = 25 °C (1) Tamb = 150 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Collector-emitter saturation voltage as a function of collector current; typical values PMBT4401YS Product data sheet Fig. 9. 102 IC (mA) 103 Collector-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 2 July 2015 10 © NXP Semiconductors N.V. 2015. All rights reserved 8 / 15 PMBT4401YS NXP Semiconductors 40 V, 600 mA, double NPN switching transistor 11. Test information IB input pulse (idealized waveform) 90 % IBon (100 %) 10 % IBoff output pulse (idealized waveform) IC 90 % IC (100 %) 10 % t td ts tr ton tf toff 006aaa003 Fig. 10. BISS transistor switching time definition VBB RB VCC RC (probe) oscilloscope 450 Ω Vo (probe) 450 Ω R2 VI oscilloscope DUT R1 mlb826 Fig. 11. Test circuit for switching times 11.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PMBT4401YS Product data sheet All information provided in this document is subject to legal disclaimers. 2 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved 9 / 15 PMBT4401YS NXP Semiconductors 40 V, 600 mA, double NPN switching transistor 12. Package outline 2.2 1.8 1.1 0.8 6 2.2 1.35 2.0 1.15 5 4 2 3 0.45 0.15 pin 1 index 1 0.65 1.3 0.3 0.2 0.25 0.10 Dimensions in mm 14-10-03 Fig. 12. Package outline TSSOP6 (SOT363) 13. Soldering 2.65 solder lands 2.35 1.5 0.4 (2×) 0.6 0.5 (4×) (4×) solder resist solder paste 0.5 (4×) 0.6 (2×) 0.6 (4×) occupied area Dimensions in mm 1.8 sot363_fr Fig. 13. Reflow soldering footprint for TSSOP6 (SOT363) PMBT4401YS Product data sheet All information provided in this document is subject to legal disclaimers. 2 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved 10 / 15 PMBT4401YS NXP Semiconductors 40 V, 600 mA, double NPN switching transistor 1.5 solder lands 0.3 2.5 4.5 1.5 solder resist occupied area Dimensions in mm 1.3 preferred transport direction during soldering 1.3 2.45 5.3 sot363_fw Fig. 14. Wave soldering footprint for TSSOP6 (SOT363) PMBT4401YS Product data sheet All information provided in this document is subject to legal disclaimers. 2 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved 11 / 15 PMBT4401YS NXP Semiconductors 40 V, 600 mA, double NPN switching transistor 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMBT4401YS v.1 20150702 Product data sheet - - PMBT4401YS Product data sheet All information provided in this document is subject to legal disclaimers. 2 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved 12 / 15 PMBT4401YS NXP Semiconductors 40 V, 600 mA, double NPN switching transistor In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. 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PMBT4401YS Product data sheet Suitability for use in automotive applications — This NXP Semiconductors product has been qualified for use in automotive applications. Unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 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Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. All information provided in this document is subject to legal disclaimers. 2 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved 13 / 15 PMBT4401YS NXP Semiconductors 40 V, 600 mA, double NPN switching transistor No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 6 11 11.1 Test information ..................................................... 9 Quality information ............................................... 9 12 Package outline ................................................... 10 13 Soldering .............................................................. 10 14 Revision history ................................................... 12 15 15.1 15.2 15.3 15.4 Legal information .................................................13 Data sheet status ............................................... 13 Definitions ...........................................................13 Disclaimers .........................................................13 Trademarks ........................................................ 14 © NXP Semiconductors N.V. 2015. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 2 July 2015 PMBT4401YS Product data sheet All information provided in this document is subject to legal disclaimers. 2 July 2015 © NXP Semiconductors N.V. 2015. All rights reserved 15 / 15