Electron beam detector Si photodiodes S11141-10 S11142-10 High sensitivity, direct detection of low energy (1 keV or more) electron beams Features Applications Direct detection of low energy (1 keV or more) electron beams with high sensitivity Backscattered electron detector for scanning electron microscope (SEM) High gain: 300 times, high detection efficiency: 72 % (incident electron energy: 1.5 keV) Large active area size S11141-10: 10 × 10 mm S11142-10: 14 × 14 mm (6.925 × 6.925 mm/1 ch) ϕ2.0 mm hole in center of active area Design is suitable for use with backscattered electron detector of SEM. S11142-10: 4-element photodiode Detects reflection electron beam position (angle) Thin ceramic package Allows short-distance arrangement between the electron gun and a sample in a SEM Uses a wiring board made of less magnetic materials that are unlikely to affect electron beam trajectories. Structure Parameter Photosensitive area Number of elements Package Window material S11141-10 10 × 10 1 S11142-10 14 × 14 4 Unit mm - Value 20 -20 to +60 -20 to +80 260 °C or less, within 5 s Unit V °C °C - Ceramic None Absolute maximum ratings Parameter Reverse voltage Operating temperature*1 Storage temperature*1 Soldering condition Symbol VR max. Topr Tstg Tsol Condition Ta=25 °C *1: No condensation Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. www.hamamatsu.com 1 Si photodiodes S11141-10, S11142-10 Electrical and optical characteristics (Ta=25 °C) Parameter Symbol Incident electron energy range S11141-10 Min. Typ. Max. 1 30 Condition - Output current Isc Dark current ID Terminal capacitance Ct Cut-off frequency fc Electron multiplying gain - Electron energy 1.5 keV Ip=100 pA*3 VR=10 mV VR=5 V VR=0 V, f=10 kHz VR=5 V, f=10 kHz VR=0 V, RL=50 Ω λ=400 nm, -3 dB VR=5 V, RL=50 Ω λ=400 nm, -3 dB Electron energy 1.5 keV Ip=100 pA*3 S11142-10*2 Min. Typ. Max. 1 30 - 30 - - 30 - - 0.5 5 1700 450 3 60 2500 680 - 0.2 3 800 200 1.2 60 1200 300 - 0.4 - - 0.8 - - 2.5 - - 5 - - 300 - - 300 - Unit keV nA nA pF MHz - *2: Per 1 element *3: Injection current (probe current) Gain vs. electron energy Detection efficiency vs. electron energy (Typ. Ta=25 °C, Ip=100 pA) 10000 (Typ. Ta=25 °C, Ip=100 pA) 100 Detection efficiency (%) Gain 90 1000 80 70 60 50 40 30 20 100 10 0 10 20 30 Electron energy (keV) 0 10 20 30 Electron energy (keV) KSPDB0344EA Gain = Isc/Ip Detection efficiency = (Gain/GTH) × 100 GTH = Electorn energy/3.62 KSPDB0347EA 2 Si photodiodes S11141-10, S11142-10 Electron multiplication principle Output current Silicon Si photodiode Vacuum Electron Dead layer Generation of electron-hole pairs (electron multiplication) Detail Electrons generate ions as they pass through silicon. This ionization process generates a large number of electron-hole pairs that then multiply the number of electrons. The electron multiplication can boost the output current by approximately 300 times at an input electron energy of 1.5 keV (refer to "Gain vs. electron energy"). KSPDC0089EA Dark current vs. reverse voltage (typical example) Terminal capacitance vs. reverse voltage (Ta=25 °C) 1 μA 100 nA 100 nF Terminal capacitance Dark current 10 nA S11141-10 1 nA S11142-10 100 pA 10 pA 1 pA 100 fA 0.1 (Typ. Ta=25 °C) 1 μF 10 nF S11141-10 1 nF 100 pF S11142-10 10 pF 1 pF 1 10 100 Reverse voltage (V) 100 fF 0.1 1 10 100 Reverse voltage (V) KSPDB0345EA KSPDB0346EA 3 Si photodiodes S11141-10, S11142-10 Dimensional outlines (unit: mm, tolerance unless otherwise noted: ±0.2) S11141-10 25.0 10.0 (2 ×) 3.0 (2 ×) 0.2 5.08 Light shield Al 10.0 5.5 ± 0.2 Wire protection resin Photosensitive area 0.5 ± 0.1 (0.25) ɸ2.0 Chip hole 1.0 max. 11.0-0 Ceramic +0.2 ɸ2.3 (2 ×) 1.5 (0.5) ɸ7.0 Ceramic hole KSPDA0187EA 4 Si photodiodes S11141-10, S11142-10 S11142-10 35.0 7.5 ± 0.2 ɸ2.3 1.8 0.3 P2.54 × 4 = 10.16 Anode common 0.15 Wire protection resin Photosensitive area 1.0 max. 14.0 0.5 ± 0.1 (0.25) ɸ2.0 Chip hole 2.54 (4 ×) 6.925 0.15 14.0 15.0-0 Ceramic +0.2 1.2 Light shield Al ɸ7.0 Ceramic hole KSPDA0188EA 5 Si photodiodes S11141-10, S11142-10 Recommend soldering conditions · Soldering temperature: below 260 °C · Soldering time: within 5 seconds Related information www.hamamatsu.com/sp/ssd/doc_en.html Precautions ∙ Notice ∙ Unsealed products Technical information ∙ Si photodiode / Application circuit examples Information described in this material is current as of November, 2014. Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J. 08807, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Cat. No. KSPD1083E01 Nov. 2014 DN 6